Intro. to VLSI
Homework Assignment 2
(Problem 2.1 in text) Consider an nMOS transistor in a 0.6
&m process with
In this process, the gate oxide thickness is 100
the mobility of electrons is 350 cm
/Vs. The threshold voltage is 0.7 V. Plot
= 0, 1, 2, 3, 4, and 5 V.
(Problem 2.8 in text) Sometimes the substrate is connected to a voltage called the
substrate bias to alter the threshold of the transistors. If the threshold of an nMOS
transistor is to be raised, should a positive or negative substrate bias be used?
The threshold is increased by applying a negative body voltage so
(Problem 2.14 in text) Peter Pitfall is offering to license to you his patented
noninverting buffer circuit shown below. Graphically derive the transfer
characteristics for this buffer. Assume