DSpace at IIT Bombay >
IITB Publications >
Proceedings papers >
Please use this identifier to cite or link to this item:
|Title: ||Performance and reliability of high density flash EEPROMs under CHISEL programming operation|
|Authors: ||MAHAPATRA, S|
|Keywords: ||flash memories|
integrated circuit reliability
integrated memory circuits
integrated circuit design
|Issue Date: ||2002|
|Citation: ||Proceeding of the 32nd European Solid-State Device Research Conference, Scotland, UK, 24-26 September 2002, 351-354.|
|Abstract: ||We demonstrate CHISEL programming operation of
fully scaled high-density flash EEPROMs. Single cell program and erase characteristics show reliable.
operation in terms of programming disturbs and cycling
induced degradation. Program and erase operation of
high-density arrays show a unique post-erase operation,
tight threshold voltage distribution and over 10 years of
data retention even after 105 program/erase cycles.
Results are presented showing the feasibility of CHISEL
programming operation for deeply scaled high-density
|Appears in Collections:||Proceedings papers|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.