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The presence of dilute magnetic semiconductors (DMS) enriches the design potential of nano scale barrier devices. Placement of these DMS layers within or adjacent to a barrier can effectively lower or raise the barrier height for carriers of different spin and thereby introduce separate but coupled components of current. The magnetic field in high g-factor devices then can function as a pseudo third terminal. In anticipation of an n-type technology with these materials we examine the development of a barrier device that contains a DMS layer strategically placed so that in the presence of a magnetic field the barrier device is transformed into a double barrier device. The goal of this design is to create a device that will show tunneling resonances. Some early calculations with this structure will be presented showing the possibilities, pitfalls and potential for designing such a structure.