Negative band gaps in dilute InNxSb1-x alloys
UNSPECIFIED. (2004) Negative band gaps in dilute InNxSb1-x alloys. PHYSICAL REVIEW LETTERS, 92 (13). -. ISSN 0031-9007Full text not available from this repository.
Official URL: http://dx.doi.org/10.1103/PhysRevLett.92.136801
A thin layer of InNSb has been fabricated by low energy nitrogen implantation in the near-surface region of InSb. X-ray photoelectron spectroscopy indicates that nitrogen occupies similar to6% of the anion lattice sites. High-resolution electron-energy-loss spectroscopy of the conduction band electron plasma reveals the absence of a depletion layer for this alloy, thus indicating that the Fermi level is located below the valence band maximum (VBM). The plasma frequency for this alloy combined with the semiconductor statistics indicates that the Fermi level is located above the conduction band minimum (CBM). Consequently, the CBM is located below the VBM, indicating a negative band gap material has been formed. These measurements are consistent with k.p calculations for InN0.06Sb0.94 that predict a semimetallic band structure.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||PHYSICAL REVIEW LETTERS|
|Publisher:||AMERICAN PHYSICAL SOC|
|Official Date:||2 April 2004|
|Number of Pages:||4|
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