Only one quick blurb for now - there have been a number of neat looking papers on the arxiv lately, but I just haven't had time to read them. I am actually making some progress on my book, though.
arxiv:0705.2180 - Martin et al., Observation of electron-hole puddles in graphene using a scanning single electron transistor
A single-electron transistor (SET) consists of an "island" (in this case, a patch of aluminum film) weakly connected by tunnel barriers (in this case, aluminum oxide) to source and drain electrodes (also aluminum films here). Defining the total capacitance of the island to be C, the Coulomb energy cost of adding another electron to the island is E_c ~ e^2/C. If E_c >> kT, the thermal energy scale, and the tunneling resistances of the barriers are >~ h/e^2 (~ 26 kOhms), then the number of electrons on the island is fixed to be an integer. By varying the voltage on a nearby gate electrode coupled capacitively to the island, it is possible to change the average population of the island by one electron at a time. When the gate is set such that the island is just on the cusp of going from an electronic population of n to n+1, the source-island-drain conductance of the device has a peak and is very strongly dependent on that gate voltage. Instead of using a gate electrode, one could use the local electronic environment near the island to modulate the island potential (and hence the conductance). SETs are incredibly good electrometers, able to sense tiny fractions of an electronic charge nearby. Now consider sticking such an SET electrometer on the end of a scanned probe tip (in this case, fabricate it directly on the end of a tapered optical fiber). This is the scanning SET, a wonderful imaging tool developed and refined originally at Bell Labs by people like Harald Hess, Ted Fulton, Bob Willett, Mike Yoo, Amir Yacoby, and Nicolai Zhitenev.
In this paper Amir and colleagues (von Klitzing and company) use the scanning SET to look at graphene near the charge neutrality point as well as in the quantum Hall regime. They can see how the system breaks up into puddles of electron-rich and hole-rich regions with ~ 100 nm spatial resolution. This is a nice application of the S-SET technique, which can be extremely arduous - meeting the temperature requirement for good charge sensitivity requires working at very low temperatures (at least 3He fridge); the SET itself is very fragile and static sensitive; and the scanned probe setup is easy to crash into the sample surface. All in all, a tour de force tool that is unlikely to make its way into common usage any time soon.