Baruah, Ratul Kumar and Mahapatra, Santanu (2009) Justifying threshold voltage definition for undoped body transistors through ``crossover point'' concept. In: Physica B: Condensed Matter, 404 (8-11). pp. 1029-1032.
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Two different definitions, one is potential based and the other is charge based, are used in the literatures to define the threshold voltage of undoped body symmetric double gate transistors. This paper, by introducing a novel concept of crossover point, proves that the charge based definition is more accurate than the potential based definition. It is shown that for a given channel length the potential based definition predicts anomalous change in threshold voltage with body thickness variation while the charge based definition results in monotonous change. The threshold voltage is then extracted from drain current versus gate voltage characteristics using linear extrapolation, transconductance and match-point methods. In all the three cases it is found that trend of threshold voltage variation support the charge based definition.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Elsevier Science.|
|Keywords:||Double gate (DG) MOSFET;Short channel effects;Threshold voltage.|
|Department/Centre:||Division of Electrical Sciences > Electronic Systems Engineering (Formerly, (CEDT) Centre for Electronic Design & Technology)|
|Date Deposited:||27 Aug 2009 06:02|
|Last Modified:||19 Sep 2010 05:33|
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