|Publication number||US7184204 B2|
|Application number||US 10/881,103|
|Publication date||27 Feb 2007|
|Filing date||30 Jun 2004|
|Priority date||1 Jul 2003|
|Also published as||US7245420, US20050002425, US20070115535|
|Publication number||10881103, 881103, US 7184204 B2, US 7184204B2, US-B2-7184204, US7184204 B2, US7184204B2|
|Inventors||Sergei V. Govorkov, Gongxue Hua, Timur Misuryaev, Alexander O. Wiessner, Thomas Schmidt, Rainer Paetzel|
|Original Assignee||Lambda Physik Ag|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (15), Referenced by (24), Classifications (12), Legal Events (5)|
|External Links: USPTO, USPTO Assignment, Espacenet|
This application claims priority to U.S. Provisional Application No. 60/484,046, filed Jul. 1, 2003, as well as U.S. Provisional Application No. 60/484,929, filed Jul. 3, 2003, each of which is hereby incorporated herein by reference.
The present invention relates to a Master-Oscillator Power-Amplifier (MOPA) excimer or molecular fluorine laser system, particularly a MOPA system having optics with a relatively long lifetime.
Semiconductor manufacturers are currently using deep ultraviolet (DUV) lithography tools based on KrF-excimer laser systems, operating at wavelengths around 248 nm, as well as ArF-excimer laser systems, which operate at around 193 nm. Vacuum UV (VUV) tools are based on F2-laser systems operating at around 157 nm. These relatively short wavelengths are advantageous for photolithography applications because the critical dimension, which represents the smallest resolvable feature size that can be produced photolithographically, is proportional to the wavelength used to produce that feature. The use of smaller wavelengths can provide for the manufacture of smaller and faster microprocessors, as well as larger capacity DRAMs, in a smaller package. In addition to having smaller wavelengths, such lasers have a relatively high photon energy (i.e., 7.9 eV) which is readily absorbed by high band gap materials such as quartz, synthetic quartz (SiO2), Teflon (PTFE), and silicone, among others. This absorption leads to excimer and molecular fluorine lasers having even greater potential in a wide variety of materials processing applications. Excimer and molecular fluorine lasers having higher energy, stability, and efficiency are being developed as lithographic exposure tools for producing very small structures as chip manufacturing proceeds into the 0.18 micron regime and beyond. The desire for such submicron features comes with a price, however, as there is a need for improved processing equipment capable of consistently and reliably generating such features. Further, as excimer laser systems are the next generation to be used for micro-lithography applications, the demand of semiconductor manufacturers for powers of 40 W or more to support throughput requirements leads to further complexity and expense.
In laser systems used for photolithography applications, for example, it would be desirable to move toward higher repetition rates, increased energy stability and dose control, increased system uptime, narrower output emission bandwidths, improved wavelength and bandwidth accuracy, and improved compatibility with stepper/scanner imaging systems. It also would be desirable to provide lithography light sources that deliver high spectral purity and extreme power, but that also deliver a low cost chip production. Requirements of semiconductor manufacturers for higher power and tighter bandwidth can place excessive, and often competing, demands on current single-chamber-based light sources. Many of these obstacles are overcome by taking advantage of a dual-gas-discharge-chamber technology referred to herein as MOPA (Master Oscillator—Power Amplifier) technology. MOPA technology can be used to separate the bandwidth and power generators of a laser system, as well as to control each gas discharge chamber separately, such that both the required bandwidth and pulse energy parameters can be optimized. Using a master oscillator (MO), for example, an extremely tight spectrum can be generated for high-numerical-aperture lenses at low pulse energy. A power amplifier (PA), for example, can be used to intensify the light, in order to deliver the power levels necessary for the high throughput desired by the chip manufacturers. The MOPA concept can be used with any appropriate laser, such as KrF, ArF, and F2-based lasers.
Components of a MOPA laser system can include those discussed in U.S. patent application Ser. No. 09/923,770, filed Aug. 6, 2001, hereby incorporated herein by reference, which discloses a molecular fluorine (F2) laser system including a seed oscillator (or master oscillator) and power amplifier. The seed oscillator comprises a laser tube including multiple electrodes therein, which are connected to a discharge circuit. Seed radiation can alternatively be provided by an excimer lamp maintained at low pressure. The laser tube is part of an optical resonator for generating a laser beam including a first line of multiple characteristic emission lines around 157 nm. The laser tube can be filled with a gas mixture including molecular fluorine and a buffer gas. The gas mixture can be at a pressure below that which results in the generation of a laser emission, including the first line around 157 nm having a natural line width of less than 0.5 pm, without an additional line-narrowing optical component for narrowing the first line. The power amplifier increases the power of the beam emitted by the seed oscillator to a desired power for applications processing. A power amplifier (PA) typically includes a discharge chamber filled with a laser gas, such as a gas including molecular fluorine, and a buffer gas. Electrodes positioned in the discharge chamber are connected to a discharge circuit, such as an electrical delay circuit, for energizing the molecular fluorine in the chamber. The discharge of the PA can be timed to be at, or near, a maximum in discharge current when a pulse from the master oscillator (MO) reaches the amplifier discharge chamber. Various line-narrowing optics can be used, such as may include one or more tuned or tuneable etalons.
A major limitation to deep-UV (DUV) excimer laser systems is the lifetime of the optical components used therein. Especially at the level of output power on the order of tens of Watts, fast decay of optical components increases downtime as well as operational costs for applications such as microlithography. While implementation of the MOPA concept can increase the output power of the laser system, one of fundamental limitations of existing MOPA systems is this relatively short optics lifetime. For example, one of the principal factors limiting the optics lifetime in a MOPA system is the fast degradation of the output window of the amplifier discharge chamber, as this optical component is typically at the point where the power is at the highest level.
Systems and methods in accordance with various embodiments of the present invention can employ any of a number of optical layouts and approaches in order to increase the lifetime of various system optics. These approaches can include, for example, reducing the average power density and peak intensity of a beam (or optical pulse) that passes through these optical components. This reduction can be significant for those optical components, as a high-power beam output from an amplifier in a MOPA system such as that shown in
In the generalized configuration 100 of
A power amplifier (PA) 104 can be positioned along the beam path at a distance from the MO, such as a distance comparable to the pulse length in free space, or at least half of the pulse length. The beam (or pulse) can pass directly to the amplifier, or can be redirected or otherwise affected by any of a number of optical elements positioned between the oscillator and amplifier. Further, any of a number of beam expanding elements, such as a prism and a focusing lens, can be used to expand the beam before the beam passes through the amplifier. Expanding the beam can reduce the intensity of the beam, while allowing the beam to utilize more of the area between the electrodes in the power amplifier, in order to maximize the gain obtained through amplification. The beam expanding optics can produce a diverging or non-diverging beam as known in the art. Beam bending optics also can be used to alter the path of the beam, such as to direct the beam to the amplifier and/or increase the path length between the oscillator and amplifier.
The intensity of the beam between the oscillator and the amplifier is not very high, typically having pulse energy on the order of a few milli-Joules or less. Optical elements such as prisms or mirrors therefore can be used effectively. The separation between the MO and PA can cause any amplified spontaneous emission (ASE) from the PA to be delayed with respect to the initial stages of pulse formation in the MO, such that pulse formation is not disturbed. A spatial filter 116 can be located along the beam path between the MO and the PA, which can serve to further de-couple the MO and the PA, and which can modify the size of beam size as described elsewhere herein. The PA can include a discharge chamber containing at least one pair of electrodes 118 on either side of the beam path. Once the beam makes a first pass through the PA, the beam can exit as an output beam and/or can pass through a ring cavity for a second pass through the PA 104, as described elsewhere herein.
At the output of the amplifier chamber, the average power and intensity of the beam are typically the highest in the system. The first optical component that the amplified beam encounters is generally the output window that seals the amplifier chamber. This window can be an un-coated, plano-parallel window made of CaF2 or MgF2, for example. In order to reduce the intensity of the beam per unit area of the window, the window can be tilted with respect to the beam (as shown in
After exiting the power amplifier, the beam can pass through at least one beam bending and/or expanding optical component 106. After passing through the beam bending/expanding optic(s) 106, the beam can pass through a pulse stretcher component 108, which can effectively stretch the length of the output pulse as described below. In certain embodiments, it can be advantageous to increase the output pulse length in order to, for example, reduce the peak power in the optical components of the stepper. It also can be practical to use at least one of the beam bending/expanding optics as part of a delay line of the pulse stretcher, where possible. As known in the art, a delay line can include any of a number of reflective, refractive, or transmissive optical elements capable of directing a beam along an optical path of a predetermined length, such that the beam exits the delay line after a predetermined amount of time has passed from the entrance of the beam into the delay line. A delay line typically includes a number of turning mirrors for directing the beam.
Several beam bending and/or beam expanding optics can be used to direct and expand the beam after passing from the discharge chamber of the power amplifier. A beam bender in one embodiment includes four prisms used to fold the beam, simultaneously changing the polarization when necessary for the accompanying pulse stretcher. For instance, a pulse stretcher can be placed within the body of the laser in a vertical plane in order to allow utilize the footprint of the laser with a minimal number of beam folding optics. In order to provide an output beam in the horizontal plane, the beam can be further bent using another beam bender, which can include a pair of prisms, for example.
After passing through the beam bending and/or expanding optics, the beam can pass through a pulse stretching component 108. A pulse stretching component can be used to obtain a pulse length of around 200 ns as desired by the Lithography industry, for example, as an excimer laser typically has a pulse length around 20–35 ns. Such a pulse length can be obtained by stretching the pulse with a pulse extending/stretching component, or “pulse stretcher.” The length of the output pulse after the pulse stretcher can depend on the length of the delay line inside the pulse stretcher. For optimum performance in one embodiment, the delay within the delay line should be as long as the pulse length of the input pulse. For an input pulse of 30 ns, then, a delay line length of about 30 ns is used which leads to an optical path length of about 10 m. It can be desirable for the length of the delay line to be substantially equal to the length of the input pulse, as a shorter delay time can result in overlap between the reflected and delayed pulses. Further, a longer delay time can lead to gaps between the reflected and delayed pulses.
Arranging the delay line vertically is feasible, as discussed above, but the beam may need to be folded many times in order to obtain the desired optical path length. This is due at least in part to the limited space in vertical direction of the laser device. Typically, a vertical space of about 1.5 m is available inside the laser enclosure, with an available width of less than one meter. For typical pulses on the order of 20–30 ns, the optimal delay line length then is on the order of 6–10 m. In order to obtain a path length of 10 m in such an enclosure the beam would have to be folded 6–8 times. As each mirror can introduce additional losses, it can be preferable to minimize the number of mirrors.
One embodiment that can provide the necessary path length while minimizing the number of additional mirrors is shown in
Different pulse extenders can be built, each of which can stretch the pulse by a different factor based on the optical path. In a simple case, a pulse extender can provide a stretching factor of about 3.0, wherein the stretcher includes a beam splitter and three folding/imaging mirrors. More sophisticated models can include, for example, a “striped” or graded reflectivity beam splitter capable of stretching the pulse by a factor of about 4–10, or a sequential pulse extender where two individual extenders with different optical path lengths are arranged in series. Striped beam splitters are described, for example, in U.S. patent application Ser. No. 10/790,660, entitled “Optical Pulse Duration Extender,” filed Mar. 1, 2004, which is hereby incorporated herein by reference. The pulse extending module can be contained within a housing of a comparable footprint and/or material to that of the laser housing.
As seen in the side view of
The path of the beam inside the pulse extender can include any appropriate path, such as the example shown in the top view of
In another embodiment, a beam exiting the discharge chamber of the power amplifier, which may also pass through a set of beam bending and/or expanding optics, can pass through a pulse extending (or pulse stretching) component 300 such as that shown in
The portion of the optical pulse that is not reflected by the first surface will be substantially transmitted through the beamsplitting element as a transmitted portion 310. If the beamsplitting element was a planar plate as in existing systems, the beam expansion in the beamsplitter would be compressed away upon exit of the beamsplitter. Since the present embodiment uses a beamsplitting prism 302, shown in more detail in
The transmitted portion 310 of the pulse is delayed with respect to the reflected portion 308 by an amount that equals the time for the transmitted pulse to follow one round-trip through the delay line formed in part by mirrors 304, 306. While at least a portion of the pulse can be added to the output upon transmission through the beamsplitter 302, a portion of the transmitted beam can be reflected by the first surface and directed back through the delay line. A reflected portion of the delayed pulse then can be further delayed in subsequent round-trips through the delay line. The output of the pulse stretching component in this embodiment then is a series of pulses spaced apart by a time interval defined by the delay line, with a correspondingly diminished energy per pulse. The resulting “Time-Integral Square” (TIS) length of the output pulse is increased, as compared to the input pulse. The resulting central waveform of such an output pulse can be as shown in
As shown in
A beamsplitting prism 302 can be made of any appropriate material, such as CaF2, excimer-grade fused silica, magnesium fluoride, or sapphire, for example. Since the angle of the prism relative to the incident beam is used to control the reflectance, and the apex angle of the prism is used to control the bending and expansion of the transmitted beam portion, no partially reflective coating or dielectric coating is required on the first, second, or third surfaces. The lack of such a coating can provide for a longer lifetime than is observed for coated beamsplitters. Further, use of such a prism allows the beam to be spread over a larger surface area than other beam splitters due to the range of apex angles, allowing for a lower intensity per unit area and a corresponding increase in optic lifetime.
As shown in the example of
where φ1 and φ2 are the incidence and reflection angles, respectively. For example, a prism made of CaF2 with a refractive index of 1.5 at 193 nm can have a preferred range of incidence angles of about 80°–83° relative to the surface normal. Since the beamsplitter does not have a coating on the first surface as in the prior art, the manufacture of the beamsplitter can be simplified, and the lifetime of the beamsplitter extended.
A beamsplitting prism can be designed, and aligned relative to the incident beam, such that the transmitted portion of the incident beam traverses the second surface 322 at nearly the Brewster angle, with no theoretical loss. The transmitted beam also will be expanded by a factor of about 3.44 in this example, which can help to reduce the intensity of the beam on the folding mirrors. Similarly, the delayed beam can pass through the third surface 324 and can again be incident onto the first surface 320, such that at least a portion of the delayed beam exits from the first surface at about 81.6° relative to the normal. The transmitted portion of the delayed beam can be compressed by a ratio of about 3.44, or back to the approximate width of the original optical pulse, and can be added to the output of the pulse stretching component. Thus, the beam size is substantially restored upon a complete round-trip through the beamsplitter and delay line. The process can repeat a number of times, as a portion of the delayed beam will continue to be reflected by the first surface as long as the beam contains a sufficient amount of energy, providing delayed output pulses with potentially diminishing intensity.
As shown in
A beam splitting component 370 in accordance with another embodiment is shown in
An anti-reflective coating can be applied to the second surface 376 in order to prevent reflection of the returning beam. The returning beam again can be expanded while passing through the beamsplitter, and re-compressed upon exiting the first surface 374. The transmitted beam can exit the beamsplitter at approximately the same location and along the same path as the reflected beam portion. An advantage to such an embodiment is a relatively simpler manufacturing process than an apex prism or dielectrically coated prism, with potential disadvantages of a degradation of the anti-reflective coating and a loss of beam expansion capability. Additional mirrors may be needed to direct the beam at the appropriate small incidence angles required for such an approach, as existing systems utilizing partially reflective dielectrically coated beamsplitters, for example, typically have an incidence angle of approximately 45° or at an angle that is approximately normal to the surface.
Beam Path Around the Amplifier
In many embodiments of the present invention, additional advantages can be obtained by using a regenerative power amplifier configuration. In a “regenerative” amplifier configuration, an oscillator beam (or optical pulse) received from an oscillator, or at least a portion of the beam, makes at least two separate passes through the discharge chamber of the amplifier. The use of at least one additional pass can allow for an increase in gain, allowing for lower input pulse energy. A multi-pass configuration also can allow the system to effectively “stretch” the amplified pulse, which can lead to a relaxed requirement of the synchronization precision and, therefore, greater pulse energy reproducibility. Stretching the beam also can lower the intensity at the output optics as discussed elsewhere herein. Optical decoupling can be used between the PA and the MO, as well as between passes of a beam through the PA, whereby a high output pulse energy can be obtained with low energy fluctuations. Further, ASE can be suppressed to less than 0.1% of the total laser output.
A spatial filter similar to that used in the arrangement of
In order to input and output a portion of the beam, the beamsplitter 610 (here also serving as the input and output mirrors of the ring cavity) can be partially reflecting. The product of the reflectivities of the “input” and “output” partial reflector portions must be small enough to not cause oscillations in the ring cavity formed by the partial reflectors and reflecting mirrors of the ring cavity. At the same time, the total transmittance through the ring cavity path has to be sufficient to create usable input for the second pass through the amplifier. A fundamental assumption in this approach is that the pulse evolution from the noise level in the ring cavity takes longer than the arrival time of the pulse from the oscillator, such that the output consists primarily of the amplified main pulse and not ASE. Using this assumption, the feedback does not necessarily have to be below the oscillation threshold in the absence of the main beam from the oscillator. One potential disadvantage to such an approach is the potential for an increased level of ASE. Beamsplitter 610, however, can substantially prevent ASE from traveling back to the MO.
Examples of a beamsplitter 610 that can be used in the arrangement of
Such an approach can be used to create a stretched pulse at the output of the amplifier, which can reduce the peak intensity of the output pulse of the system. Further, the direction of the beam is always away from the oscillator (not shown) while passing through the amplifier. A variety of such beam paths can be used with an amplifier of a MOPA system, such as are disclosed in pending U.S. patent application Ser. No. 10/696,979, filed Oct. 30, 2003, and Ser. No. 10/776,137, filed Feb. 11, 2004, each of which is incorporated herein by reference. The use of a ring cavity or circular beam path can help to minimize the amount of ASE that can otherwise disturb the operation of oscillator. The position of the reflecting mirrors can be adjusted to increase the beam path in the ring cavity to increase the “time window” of the amplification, resulting in the overall gain being less sensitive to the time jitter between successive discharges. The ring cavity can include a spatial filter as described below with respect to
In order to mitigate the fast degradation of the output window of the amplifier discharge chamber, the cross-sectional area of the amplified beam can be increased in order to reduce the intensity at the window position. In order to increase the cross-sectional area, the beam can be expanded before entering the amplifier, using any of a number of beam expanding optics or approaches described herein or known or used in the art. A beam 800 also can be aligned at a small angle relative to the electrodes 802 of the amplification chamber, such as is illustrated in
Another potential downside to the angled beam approach of
Another approach that can be used to further mitigate degradation of the amplifier output window 902 involves moving the output window away from the discharge area in the amplifier chamber 900, such as is shown in
Laser System Components
The laser system 1000 includes a MOPA laser component 1002 as described herein, which includes a master oscillator chamber 1004 and a power amplifier chamber 1006. Each chamber can have an associated heat exchanger and/or fan for circulating a gas mixture within the chamber. Each chamber can include a plurality of electrodes, such as a pair of main discharge electrodes and one or more ionization electrodes or elements, which can be connected with a solid-state pulser module 1008, or with separate pulser modules or circuitry as described elsewhere herein. At least one gas handling module 1010 can have a valve connection to each chamber, such that halogen, rare and buffer gases, and gas additives, can be injected or filled into the chambers, such as in premixed forms for ArF, XeCl and KrF excimer lasers, as well as halogen, buffer gases, and any gas additive for an F2 laser. The gas handling module(s) 1010 can be preferred when the laser system is used for microlithography applications, wherein very high energy stability is desired. Gas handling modules can be optional for a laser system such as a high power XeCl laser. A solid-state pulser module 1008 can be powered by a high voltage power supply 1012. Alternatively, a thyratron pulser module can be used. The oscillator chamber 1004 can be surrounded by optics modules, forming a resonator. The optics modules can include a highly reflective resonator reflector in a rear optics module, and a partially reflecting output coupling mirror in a front optics module. The optics modules can be controlled by an optics control module 1014, or can be directly controlled by a computer or processor 1016, particularly when line-narrowing optics are included in one or both of the optics modules.
The processor 1016 for laser control can receive various inputs and control various operating parameters of the system. A diagnostic module 1018 can receive and measure one or more parameters of a split off portion of the main beam 1020 via optics for deflecting a small portion of the beam toward the module 1018. The diagnostic module can also receive a portion of the beam between the MO and the PA (not shown) in order to measure one or more parameters of the pulse before amplification by the PA. These parameters can include pulse energy, average energy and/or power, and wavelength. The optics for deflecting a small portion of the beam can include a beam splitter module 1022. The beam 1020 exiting the MOPA can be laser output to an imaging system (not shown) and ultimately to a workpiece (also not shown), such as for lithographic applications, and can be output directly to an application process. Laser control computer 1016 can communicate through an interface 1024 with a stepper/scanner computer 1026, other control units 1028, and/or other, external systems.
The processor or control computer 1016 can receive and process parameter values, such as may include the pulse shape, energy, ASE, energy stability, energy overshoot (for burst mode operation), wavelength, spectral purity, and/or bandwidth, as well as other input or output parameters of the laser system and/or output beam. The processor can receive signals corresponding to the wavefront compensation, such as values of the bandwidth, and can control wavefront compensation, performed by a wavefront compensation optic in a feedback loop, by sending signals to adjust the pressure(s) and/or curvature(s) of surfaces associated with the wavefront compensation optic. The processor 1016 also can control the line narrowing module to tune the wavelength, bandwidth, and/or spectral purity, and can control the power supply 1012 and pulser module 1008 to control the moving average pulse power or energy, such that the energy dose at points on a workpiece is stabilized around a desired value. The laser control computer 1016 also can control the gas handling module 1010, which can include gas supply valves connected to various gas sources.
Each laser chamber can contain a laser gas mixture, and can include one or more ionization electrodes in addition to the pair of main discharge electrodes. The main electrodes can be similar to those described at U.S. Pat. No. 6,466,599 B1 (incorporated herein by reference above) for photolithographic applications.
The solid-state or thyratron pulser module 1008 and high voltage power supply 1012 can supply electrical energy in compressed electrical pulses to ionization and/or main electrodes within each laser chamber, in order to energize the gas mixture. A rear optics module can include line-narrowing optics for a line narrowed excimer or molecular fluorine laser as described above, which can be replaced by a high reflectivity mirror or the like in a laser system wherein either line-narrowing is not desired, or if line narrowing is performed at the front optics module, or a spectral filter external to the resonator is used, or if the line-narrowing optics are disposed in front of the HR mirror, for narrowing the bandwidth of the output beam.
Each laser chamber can be sealed by windows transparent to the wavelengths of the emitted laser radiation 1020. The windows can be Brewster windows, or can be aligned at an angle, such as on the order of about 5°, to the optical path of the resonating beam. One of the windows also can serve to output couple the beam.
After a portion of the output beam 1020 passes from the MOPA component 1002, that output portion can impinge upon a beam splitter module 1022 including optics for deflecting a portion of the beam to a diagnostic module 1018, or otherwise allowing a small portion of the output beam to reach the diagnostic module 1018, while a main beam portion is allowed to continue as the output beam 1020 of the laser system. The optics can include a beamsplitter or otherwise partially reflecting first surface optic, as well as a mirror or beam splitter as a second reflecting optic. More than one beam splitter and/or HR mirror(s), and/or dichroic mirror(s) can be used to direct portions of the beam to components of the diagnostic module 1018. A holographic beam sampler, transmission grating, partially transmissive reflection diffraction grating, grism, prism or other refractive, dispersive and/or transmissive optic or optics also can be used to separate a small beam portion from the main beam 1020 for detection at the diagnostic module 1018, while allowing most of the main beam 1020 to reach an application process directly, via an imaging system or otherwise.
The output beam 1020 can be transmitted at the beam splitter module, while a reflected beam portion is directed at the diagnostic module 1018. Alternatively, the main beam 1020 can be reflected while a small portion is transmitted to a diagnostic module 1018. The portion of the outcoupled beam which continues past the beam splitter module can be the output beam 1020 of the laser, which can propagate toward an industrial or experimental application such as an imaging system and workpiece for photolithographic applications.
For a system such as a molecular fluorine laser system or ArF laser system, an enclosure (not shown) can be used to seal the beam path of the beam 1020 in order to keep the beam path free of photoabsorbing species. Smaller enclosures can seal the beam path between each chamber, between the chambers and any optics modules, as well as between the beam splitter 1022 and the diagnostic module 1018.
The diagnostic module 1018 can include at least one energy detector to measure the total energy of the beam portion that corresponds directly to the energy of the output beam 1020. An optical configuration such as an optical attenuator, plate, coating, or other optic can be formed on or near the detector or beam splitter module 1022, in order to control the intensity, spectral distribution, and/or other parameters of the radiation impinging upon the detector.
A wavelength and/or bandwidth detection component can be used with the diagnostic module 1018, the component including, for example, a monitor etalon or grating spectrometer. Other components of the diagnostic module can include a pulse shape detector or ASE detector, such as for gas control and/or output beam energy stabilization, or to monitor the amount of amplified spontaneous emission (ASE) within the beam, ensuring that the ASE remains below a predetermined level. There also can be a beam alignment monitor and/or beam profile monitor.
The processor or control computer 1016 can receive and process values for the pulse shape, energy, ASE, energy stability, energy overshoot for burst mode operation, wavelength, and spectral purity and/or bandwidth, as well as other input or output parameters of the MOPA system and output beam. The processor 1016 also can control the line narrowing module to tune the wavelength and/or bandwidth or spectral purity, and can control each power supply 1012 and pulser module 1008 to control the moving average pulse power or energy, such that the energy dose at points on the workpiece can be stabilized around a desired value. In addition, the computer 1016 can control each gas handling module 1010, which can include gas supply valves connected to various gas sources. Further functions of the processor 1016 can include providing overshoot control, stabilizing the energy, and/or monitoring energy input to the discharge.
The processor 1016 can communicate with each solid-state or thyratron pulser module 1008 and HV power supply 1012, separately or in combination, as well as the gas handling module 1010, the optics modules, the diagnostic module 1018, and an interface 1024. The processor 1016 also can control an auxiliary volume, which can be connected to a vacuum pump (not shown) for releasing gases from each laser chamber and for reducing a total pressure in the tube. The pressure in the tube can also be controlled by controlling the gas flow through the ports to and from the additional volume.
A laser gas mixture initially can be filled into each laser chamber in a process referred to herein as a “new fill”. In such procedure, a laser tube can be evacuated of laser gases and contaminants, and re-filled with an ideal gas composition of fresh gas. The gas composition for a very stable excimer or molecular fluorine laser can use helium or neon, or a mixture of helium and neon, as buffer gas(es), depending on the laser being used. The gas composition can vary between the MO and the PA, as described in U.S. patent application Ser. No. 09/923,770, filed Aug. 6, 2001, incorporated herein by reference above.
Total pressure adjustments in the form of releases of gases or reduction of the total pressure within each chamber also can be performed. Total pressure adjustments can be followed by gas composition adjustments if necessary. Total pressure adjustments also can be performed after gas replenishment actions, and can be performed in combination with smaller adjustments of the driving voltage to the discharge than would be made if no pressure adjustments were performed in combination.
Line-narrowing features in accordance with various embodiments of a laser system can be used along with the wavefront compensating optic. For an F2 laser, for example, the optics can be used for selecting the primary line λ1 from multiple lines around 157 nm. The optics can be used to provide additional line narrowing and/or to perform line-selection. The resonator can include optics for line-selection, as well as optics for line-narrowing of the selected line. Line-narrowing can be provided by controlling (i.e., reducing) the total pressure.
Exemplary line-narrowing optics contained in the optics modules and/or between chambers can include at least one beam expanding element. An optional interferometric device such as an etalon and a diffraction grating also can be used, which can produce a relatively high degree of dispersion. A beam expander can include one or more prisms, as well as other beam expanding optics, such as a lens assembly or a converging/diverging lens pair.
The material used for any dispersive prisms, beam expander prisms, etalons, or other interferometric devices, laser windows, and/or the outcoupler can be a material that is highly transparent at excimer or molecular fluorine laser wavelengths, such as 248 nm for the KrF laser, 193 nm for the ArF laser and 157 nm for the F2 laser. The material can be capable of withstanding long-term exposure to ultraviolet light with minimal degradation effects. Examples of such materials can include CaF2, MgF2, BaF2, LiF, and SrF2. In some cases fluorine-doped quartz can be used, while fused silica can be used for the KrF laser. Many optical surfaces, particularly those of the prisms, can have an anti-reflective coating, such as on one or more optical surfaces of an optic, in order to minimize reflection losses and prolong optic lifetime.
It should be recognized that a number of variations of the above-identified embodiments will be obvious to one of ordinary skill in the art in view of the foregoing description. Accordingly, the invention is not to be limited by those specific embodiments and methods of the present invention shown and described herein. Rather, the scope of the invention is to be defined by the following claims and their equivalents.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US5689363 *||12 Jun 1995||18 Nov 1997||The Regents Of The University Of California||Long-pulse-width narrow-bandwidth solid state laser|
|US6370174||10 Dec 1999||9 Apr 2002||Cymer, Inc.||Injection seeded F2 lithography laser|
|US6381257||28 Dec 1999||30 Apr 2002||Cymer, Inc.||Very narrow band injection seeded F2 lithography laser|
|US6389045||17 Apr 2000||14 May 2002||Lambda Physik Ag||Optical pulse stretching and smoothing for ArF and F2 lithography excimer lasers|
|US6466599||3 Dec 1999||15 Oct 2002||Lambda Physik Ag||Discharge unit for a high repetition rate excimer or molecular fluorine laser|
|US6693939||7 May 2002||17 Feb 2004||Cymer, Inc.||Laser lithography light source with beam delivery|
|US6721344||23 May 2002||13 Apr 2004||Komatsu Ltd.||Injection locking type or MOPA type of laser device|
|US6741627||27 Dec 2002||25 May 2004||Ushio Denki Kabushiki Kaisya||Photolithographic molecular fluorine laser system|
|US6904073 *||8 Mar 2003||7 Jun 2005||Cymer, Inc.||High power deep ultraviolet laser with long life optics|
|US20020154668||30 Nov 2001||24 Oct 2002||Knowles David S.||Very narrow band, two chamber, high rep rate gas discharge laser system|
|US20020191654||7 May 2002||19 Dec 2002||Brian Klene||Laser lithography light source with beam delivery|
|US20030043876||30 Aug 2002||6 Mar 2003||Leonard Lublin||Lithography laser with beam delivery and beam pointing control|
|US20030219056||8 Mar 2003||27 Nov 2003||Yager Thomas A.||High power deep ultraviolet laser with long life optics|
|US20040022291||29 Apr 2003||5 Feb 2004||Das Plash P.||Lithography laser with beam delivery and beam pointing control|
|WO2003096497A1||23 Apr 2003||20 Nov 2003||John M Algots||High power deep ultraviolet laser with long life optics|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US7630424||30 Oct 2007||8 Dec 2009||Cymer, Inc.||Laser system|
|US7643529||31 Oct 2007||5 Jan 2010||Cymer, Inc.||Laser system|
|US7715459||31 Oct 2007||11 May 2010||Cymer, Inc.||Laser system|
|US7746913||30 Oct 2007||29 Jun 2010||Cymer, Inc.||Laser system|
|US7778302||30 Oct 2007||17 Aug 2010||Cymer, Inc.||Laser system|
|US7822092 *||30 Oct 2007||26 Oct 2010||Cymer, Inc.||Laser system|
|US7885309||13 Apr 2007||8 Feb 2011||Cymer, Inc.||Laser system|
|US7920616 *||30 Oct 2007||5 Apr 2011||Cymer, Inc.||Laser system|
|US7999915||30 Oct 2007||16 Aug 2011||Cymer, Inc.||Laser system|
|US8014432||16 Mar 2010||6 Sep 2011||Cymer, Inc.||Regenerative ring resonator|
|US8144740||16 Dec 2009||27 Mar 2012||Cymer, Inc.||Laser system|
|US8170078||7 Jan 2011||1 May 2012||Cymer, Inc.||Laser system|
|US8908735||13 Sep 2011||9 Dec 2014||Cymer, Llc||Laser system|
|US20080144671 *||30 Oct 2007||19 Jun 2008||Cymer, Inc.||Laser system|
|US20080165337 *||30 Oct 2007||10 Jul 2008||Cymer, Inc.||Laser system|
|US20080225904 *||31 Oct 2007||18 Sep 2008||Cymer, Inc.||Laser system|
|US20080267241 *||31 Oct 2007||30 Oct 2008||Cymer, Inc.||Laser system|
|US20080267242 *||30 Oct 2007||30 Oct 2008||Cymer, Inc.||Laser system|
|US20090067468 *||30 Oct 2007||12 Mar 2009||Cymer, Inc.||Laser system|
|US20090122825 *||30 Oct 2007||14 May 2009||Cymer, Inc.||Laser system|
|US20090296755 *||30 Oct 2007||3 Dec 2009||Cymer, Inc.||Laser system|
|US20090296758 *||3 Dec 2009||Cymer, Inc.||Laser system|
|US20110069733 *||24 Mar 2011||Cymer Inc.||Regenerative ring resonator|
|US20110102759 *||5 May 2011||Cymer, Inc.||Laser System|
|U.S. Classification||359/333, 372/55, 372/25|
|International Classification||H01S3/00, H01S3/10, H01S3/22|
|Cooperative Classification||G03F7/7055, H01S3/0057, H01S3/235, H01S3/0835|
|European Classification||G03F7/70L4, H01S3/00F1|
|30 Aug 2004||AS||Assignment|
Owner name: LAMBDA PHYSIK AG, GERMANY
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:GOVORKOV, SERGEI V.;HUA, GONGXUE;MISURYAEV, TIMUR;AND OTHERS;REEL/FRAME:015735/0621;SIGNING DATES FROM 20040707 TO 20040810
|28 Jul 2010||FPAY||Fee payment|
Year of fee payment: 4
|27 Aug 2010||AS||Assignment|
Owner name: COHERENT LAMBDA PHYSIK GMBH, GERMANY
Free format text: CHANGE OF NAME;ASSIGNOR:LAMBDA PHYSIK AG;REEL/FRAME:024898/0109
Effective date: 20000609
|30 Aug 2010||AS||Assignment|
Owner name: COHERENT GMBH, GERMANY
Free format text: CHANGE OF NAME;ASSIGNOR:COHERENT LAMBDA PHYSIK GMBH;REEL/FRAME:024905/0269
Effective date: 20060314
|30 Jul 2014||FPAY||Fee payment|
Year of fee payment: 8