/**
  ******************************************************************************
  * @file    stm32f2xx_hal_flash_ex.c
  * @author  MCD Application Team
  * @brief   Extended FLASH HAL module driver.
  *          This file provides firmware functions to manage the following 
  *          functionalities of the FLASH extension peripheral:
  *           + Extended programming operations functions
  *  
  ******************************************************************************
  * @attention
  *
  * Copyright (c) 2017 STMicroelectronics.
  * All rights reserved.
  *
  * This software is licensed under terms that can be found in the LICENSE file in
  * the root directory of this software component.
  * If no LICENSE file comes with this software, it is provided AS-IS.
  *
  ******************************************************************************
  @verbatim
  ==============================================================================
                   ##### Flash Extension features #####
  ==============================================================================
           
                      ##### How to use this driver #####
  ==============================================================================
  [..] This driver provides functions to configure and program the FLASH memory 
       of all STM32F2xx devices. It includes
      (#) FLASH Memory Erase functions: 
           (++) Lock and Unlock the FLASH interface using HAL_FLASH_Unlock() and 
                HAL_FLASH_Lock() functions
           (++) Erase function: Erase sector, erase all sectors
           (++) There are two modes of erase :
             (+++) Polling Mode using HAL_FLASHEx_Erase()
             (+++) Interrupt Mode using HAL_FLASHEx_Erase_IT()
             
      (#) Option Bytes Programming functions: Use HAL_FLASHEx_OBProgram() to :
           (++) Set/Reset the write protection
           (++) Set the Read protection Level
           (++) Set the BOR level
           (++) Program the user Option Bytes
  
  @endverbatim
  ******************************************************************************
  */

/* Includes ------------------------------------------------------------------*/
#include "stm32f2xx_hal.h"

/** @addtogroup STM32F2xx_HAL_Driver
  * @{
  */

/** @defgroup FLASHEx FLASHEx
  * @brief FLASH HAL Extension module driver
  * @{
  */

#ifdef HAL_FLASH_MODULE_ENABLED

/* Private typedef -----------------------------------------------------------*/
/* Private define ------------------------------------------------------------*/
/** @addtogroup FLASHEx_Private_Constants
  * @{
  */
#define FLASH_TIMEOUT_VALUE       50000U   /* 50 s */
/**
  * @}
  */
    
/* Private macro -------------------------------------------------------------*/
/* Private variables ---------------------------------------------------------*/
/** @addtogroup FLASHEx_Private_Variables
  * @{
  */    
extern FLASH_ProcessTypeDef pFlash;
/**
  * @}
  */

/* Private function prototypes -----------------------------------------------*/
/** @addtogroup FLASHEx_Private_Functions
  * @{
  */
/* Option bytes control */
static void               FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks);
static HAL_StatusTypeDef  FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks);
static HAL_StatusTypeDef  FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks);
static HAL_StatusTypeDef  FLASH_OB_RDP_LevelConfig(uint8_t Level);
static HAL_StatusTypeDef  FLASH_OB_UserConfig(uint8_t Iwdg, uint8_t Stop, uint8_t Stdby);
static HAL_StatusTypeDef  FLASH_OB_BOR_LevelConfig(uint8_t Level);
static uint8_t            FLASH_OB_GetUser(void);
static uint16_t           FLASH_OB_GetWRP(void);
static uint8_t            FLASH_OB_GetRDP(void);
static uint8_t            FLASH_OB_GetBOR(void);

extern HAL_StatusTypeDef         FLASH_WaitForLastOperation(uint32_t Timeout);
/**
  * @}
  */

/* Exported functions --------------------------------------------------------*/
/** @defgroup FLASHEx_Exported_Functions FLASH Exported Functions
  * @{
  */

/** @defgroup FLASHEx_Exported_Functions_Group1 Extended IO operation functions
  *  @brief   Extended IO operation functions 
  *
@verbatim   
 ===============================================================================
                ##### Extended programming operation functions #####
 ===============================================================================  
    [..]
    This subsection provides a set of functions allowing to manage the Extension FLASH 
    programming operations.

@endverbatim
  * @{
  */
/**
  * @brief  Perform a mass erase or erase the specified FLASH memory sectors 
  * @param[in]  pEraseInit pointer to an FLASH_EraseInitTypeDef structure that
  *         contains the configuration information for the erasing.
  * 
  * @param[out]  SectorError pointer to variable  that
  *         contains the configuration information on faulty sector in case of error 
  *         (0xFFFFFFFF means that all the sectors have been correctly erased)
  * 
  * @retval HAL Status
  */
HAL_StatusTypeDef HAL_FLASHEx_Erase(FLASH_EraseInitTypeDef *pEraseInit, uint32_t *SectorError)
{
  HAL_StatusTypeDef status = HAL_ERROR;
  uint32_t index = 0U;
  
  /* Process Locked */
  __HAL_LOCK(&pFlash);

  /* Check the parameters */
  assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));

  /* Wait for last operation to be completed */
  status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);

  if(status == HAL_OK)
  {
    /*Initialization of SectorError variable*/
    *SectorError = 0xFFFFFFFFU;
    
    if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
    {
      /*Mass erase to be done*/
      FLASH_MassErase((uint8_t) pEraseInit->VoltageRange, pEraseInit->Banks);

      /* Wait for last operation to be completed */
      status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
      
      /* if the erase operation is completed, disable the MER Bit */
      FLASH->CR &= (~FLASH_MER_BIT);
    }
    else
    {
      /* Check the parameters */
      assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));

      /* Erase by sector by sector to be done*/
      for(index = pEraseInit->Sector; index < (pEraseInit->NbSectors + pEraseInit->Sector); index++)
      {
        FLASH_Erase_Sector(index, (uint8_t) pEraseInit->VoltageRange);

        /* Wait for last operation to be completed */
        status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
        
        /* If the erase operation is completed, disable the SER and SNB Bits */
        CLEAR_BIT(FLASH->CR, (FLASH_CR_SER | FLASH_CR_SNB));

        if(status != HAL_OK) 
        {
          /* In case of error, stop erase procedure and return the faulty sector*/
          *SectorError = index;
          break;
        }
      }
    }
    /* Flush the caches to be sure of the data consistency */
    FLASH_FlushCaches();    
  }

  /* Process Unlocked */
  __HAL_UNLOCK(&pFlash);

  return status;
}

/**
  * @brief  Perform a mass erase or erase the specified FLASH memory sectors  with interrupt enabled
  * @param  pEraseInit pointer to an FLASH_EraseInitTypeDef structure that
  *         contains the configuration information for the erasing.
  * 
  * @retval HAL Status
  */
HAL_StatusTypeDef HAL_FLASHEx_Erase_IT(FLASH_EraseInitTypeDef *pEraseInit)
{
  HAL_StatusTypeDef status = HAL_OK;

  /* Check the parameters */
  assert_param(IS_FLASH_TYPEERASE(pEraseInit->TypeErase));

  /* Enable End of FLASH Operation interrupt */
  __HAL_FLASH_ENABLE_IT(FLASH_IT_EOP);
  
  /* Enable Error source interrupt */
  __HAL_FLASH_ENABLE_IT(FLASH_IT_ERR);
  
  /* Clear pending flags (if any) */  
  __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP    | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR |\
                         FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR| FLASH_FLAG_PGSERR);  
  
  if(pEraseInit->TypeErase == FLASH_TYPEERASE_MASSERASE)
  {
    /*Mass erase to be done*/
    pFlash.ProcedureOnGoing = FLASH_PROC_MASSERASE;
    pFlash.Bank = pEraseInit->Banks;
    FLASH_MassErase((uint8_t) pEraseInit->VoltageRange, pEraseInit->Banks);
  }
  else
  {
    /* Erase by sector to be done*/

    /* Check the parameters */
    assert_param(IS_FLASH_NBSECTORS(pEraseInit->NbSectors + pEraseInit->Sector));

    pFlash.ProcedureOnGoing = FLASH_PROC_SECTERASE;
    pFlash.NbSectorsToErase = pEraseInit->NbSectors;
    pFlash.Sector = pEraseInit->Sector;
    pFlash.VoltageForErase = (uint8_t)pEraseInit->VoltageRange;

    /*Erase 1st sector and wait for IT*/
    FLASH_Erase_Sector(pEraseInit->Sector, pEraseInit->VoltageRange);
  }

  return status;
}

/**
  * @brief   Program option bytes
  * @param  pOBInit pointer to an FLASH_OBInitStruct structure that
  *         contains the configuration information for the programming.
  * 
  * @retval HAL Status
  */
HAL_StatusTypeDef HAL_FLASHEx_OBProgram(FLASH_OBProgramInitTypeDef *pOBInit)
{
  HAL_StatusTypeDef status = HAL_ERROR;
  
  /* Process Locked */
  __HAL_LOCK(&pFlash);

  /* Check the parameters */
  assert_param(IS_OPTIONBYTE(pOBInit->OptionType));

  /*Write protection configuration*/
  if((pOBInit->OptionType & OPTIONBYTE_WRP) == OPTIONBYTE_WRP)
  {
    assert_param(IS_WRPSTATE(pOBInit->WRPState));
    if(pOBInit->WRPState == OB_WRPSTATE_ENABLE)
    {
      /*Enable of Write protection on the selected Sector*/
      status = FLASH_OB_EnableWRP(pOBInit->WRPSector, pOBInit->Banks);
    }
    else
    {
      /*Disable of Write protection on the selected Sector*/
      status = FLASH_OB_DisableWRP(pOBInit->WRPSector, pOBInit->Banks);
    }
  }

  /*Read protection configuration*/
  if((pOBInit->OptionType & OPTIONBYTE_RDP) == OPTIONBYTE_RDP)
  {
    status = FLASH_OB_RDP_LevelConfig(pOBInit->RDPLevel);
  }

  /*USER  configuration*/
  if((pOBInit->OptionType & OPTIONBYTE_USER) == OPTIONBYTE_USER)
  {
    status = FLASH_OB_UserConfig(pOBInit->USERConfig&OB_IWDG_SW, 
                                     pOBInit->USERConfig&OB_STOP_NO_RST,
                                     pOBInit->USERConfig&OB_STDBY_NO_RST);
  }

  /*BOR Level  configuration*/
  if((pOBInit->OptionType & OPTIONBYTE_BOR) == OPTIONBYTE_BOR)
  {
    status = FLASH_OB_BOR_LevelConfig(pOBInit->BORLevel);
  }

  /* Process Unlocked */
  __HAL_UNLOCK(&pFlash);

  return status;
}

/**
  * @brief   Get the Option byte configuration
  * @param  pOBInit pointer to an FLASH_OBInitStruct structure that
  *         contains the configuration information for the programming.
  * 
  * @retval None
  */
void HAL_FLASHEx_OBGetConfig(FLASH_OBProgramInitTypeDef *pOBInit)
{
  pOBInit->OptionType = OPTIONBYTE_WRP | OPTIONBYTE_RDP | OPTIONBYTE_USER | OPTIONBYTE_BOR;

  /*Get WRP*/
  pOBInit->WRPSector = (uint32_t)FLASH_OB_GetWRP();

  /*Get RDP Level*/
  pOBInit->RDPLevel = (uint32_t)FLASH_OB_GetRDP();

  /*Get USER*/
  pOBInit->USERConfig = (uint8_t)FLASH_OB_GetUser();

  /*Get BOR Level*/
  pOBInit->BORLevel = (uint32_t)FLASH_OB_GetBOR();
}

/**
  * @}
  */

/**
  * @brief  Erase the specified FLASH memory sector
  * @param  Sector FLASH sector to erase
  *         The value of this parameter depend on device used within the same series      
  * @param  VoltageRange The device voltage range which defines the erase parallelism.  
  *          This parameter can be one of the following values:
  *            @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V, 
  *                                  the operation will be done by byte (8-bit) 
  *            @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
  *                                  the operation will be done by half word (16-bit)
  *            @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
  *                                  the operation will be done by word (32-bit)
  *            @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp, 
  *                                  the operation will be done by double word (64-bit)
  * 
  * @retval None
  */
void FLASH_Erase_Sector(uint32_t Sector, uint8_t VoltageRange)
{
  uint32_t tmp_psize = 0U;

  /* Check the parameters */
  assert_param(IS_FLASH_SECTOR(Sector));
  assert_param(IS_VOLTAGERANGE(VoltageRange));
  
  if(VoltageRange == FLASH_VOLTAGE_RANGE_1)
  {
     tmp_psize = FLASH_PSIZE_BYTE;
  }
  else if(VoltageRange == FLASH_VOLTAGE_RANGE_2)
  {
    tmp_psize = FLASH_PSIZE_HALF_WORD;
  }
  else if(VoltageRange == FLASH_VOLTAGE_RANGE_3)
  {
    tmp_psize = FLASH_PSIZE_WORD;
  }
  else
  {
    tmp_psize = FLASH_PSIZE_DOUBLE_WORD;
  }

  /* If the previous operation is completed, proceed to erase the sector */
  CLEAR_BIT(FLASH->CR, FLASH_CR_PSIZE);
  FLASH->CR |= tmp_psize;
  CLEAR_BIT(FLASH->CR, FLASH_CR_SNB);
  FLASH->CR |= FLASH_CR_SER | (Sector << POSITION_VAL(FLASH_CR_SNB));
  FLASH->CR |= FLASH_CR_STRT;
}

/**
  * @brief  Flush the instruction and data caches
  * @retval None
  */
void FLASH_FlushCaches(void)
{
  /* Flush instruction cache  */
  if(READ_BIT(FLASH->ACR, FLASH_ACR_ICEN) != RESET)
  {
    /* Disable instruction cache  */
    __HAL_FLASH_INSTRUCTION_CACHE_DISABLE();
    /* Reset instruction cache */
    __HAL_FLASH_INSTRUCTION_CACHE_RESET();
    /* Enable instruction cache */
    __HAL_FLASH_INSTRUCTION_CACHE_ENABLE();
  }
  
  /* Flush data cache */
  if(READ_BIT(FLASH->ACR, FLASH_ACR_DCEN) != RESET)
  {
    /* Disable data cache  */
    __HAL_FLASH_DATA_CACHE_DISABLE();
    /* Reset data cache */
    __HAL_FLASH_DATA_CACHE_RESET();
    /* Enable data cache */
    __HAL_FLASH_DATA_CACHE_ENABLE();
  }
}

/**
  * @brief  Mass erase of FLASH memory
  * @param  VoltageRange The device voltage range which defines the erase parallelism.  
  *          This parameter can be one of the following values:
  *            @arg FLASH_VOLTAGE_RANGE_1: when the device voltage range is 1.8V to 2.1V, 
  *                                  the operation will be done by byte (8-bit) 
  *            @arg FLASH_VOLTAGE_RANGE_2: when the device voltage range is 2.1V to 2.7V,
  *                                  the operation will be done by half word (16-bit)
  *            @arg FLASH_VOLTAGE_RANGE_3: when the device voltage range is 2.7V to 3.6V,
  *                                  the operation will be done by word (32-bit)
  *            @arg FLASH_VOLTAGE_RANGE_4: when the device voltage range is 2.7V to 3.6V + External Vpp, 
  *                                  the operation will be done by double word (64-bit)
  * 
  * @param  Banks Banks to be erased
  *          This parameter can be one of the following values:
  *            @arg FLASH_BANK_1: Bank1 to be erased
  *
  * @retval None
  */
static void FLASH_MassErase(uint8_t VoltageRange, uint32_t Banks)
{ 
  /* Prevent unused argument(s) compilation warning */
  UNUSED(Banks);

  /* Check the parameters */
  assert_param(IS_VOLTAGERANGE(VoltageRange));
  assert_param(IS_FLASH_BANK(Banks));
  
  /* If the previous operation is completed, proceed to erase all sectors */
  CLEAR_BIT(FLASH->CR, FLASH_CR_PSIZE);
  FLASH->CR |= FLASH_CR_MER;
  FLASH->CR |= FLASH_CR_STRT | ((uint32_t)VoltageRange <<8U);
}

/**
  * @brief  Enable the write protection of the desired bank 1 sectors
  *
  * @note   When the memory read protection level is selected (RDP level = 1), 
  *         it is not possible to program or erase the flash sector i if CortexM3  
  *         debug features are connected or boot code is executed in RAM, even if nWRPi = 1 
  * 
  * @param  WRPSector specifies the sector(s) to be write protected.
  *         The value of this parameter depend on device used within the same series 
  * 
  * @param  Banks Enable write protection on all the sectors for the specific bank
  *          This parameter can be one of the following values:
  *            @arg FLASH_BANK_1: WRP on all sectors of bank1
  *
  * @retval HAL Status 
  */
static HAL_StatusTypeDef FLASH_OB_EnableWRP(uint32_t WRPSector, uint32_t Banks)
{
  HAL_StatusTypeDef status = HAL_OK;

  /* Prevent unused argument(s) compilation warning */
  UNUSED(Banks);

  /* Check the parameters */
  assert_param(IS_OB_WRP_SECTOR(WRPSector));
  assert_param(IS_FLASH_BANK(Banks));
    
  /* Wait for last operation to be completed */
  status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);

  if(status == HAL_OK)
  { 
    *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS &= (~WRPSector);  
  }
  
  return status;
}

/**
  * @brief  Disable the write protection of the desired bank 1 sectors
  *
  * @note   When the memory read protection level is selected (RDP level = 1), 
  *         it is not possible to program or erase the flash sector if CortexM3  
  *         debug features are connected or boot code is executed in RAM, even if nWRPi = 1 
  * 
  * @param  WRPSector specifies the sector(s) to be write protected.
  *         The value of this parameter depend on device used within the same series 
  * 
  * @param  Banks Enable write protection on all the sectors for the specific bank
  *          This parameter can be one of the following values:
  *            @arg FLASH_BANK_1: WRP on all sectors of bank1
  *
  * @retval HAL Status 
  */
static HAL_StatusTypeDef FLASH_OB_DisableWRP(uint32_t WRPSector, uint32_t Banks)
{
  HAL_StatusTypeDef status = HAL_OK;

  /* Prevent unused argument(s) compilation warning */
  UNUSED(Banks);

  /* Check the parameters */
  assert_param(IS_OB_WRP_SECTOR(WRPSector));
  assert_param(IS_FLASH_BANK(Banks));
    
  /* Wait for last operation to be completed */
  status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);

  if(status == HAL_OK)
  { 
    *(__IO uint16_t*)OPTCR_BYTE2_ADDRESS |= (uint16_t)WRPSector; 
  }
  
  return status;
}

/**
  * @brief  Set the read protection level.
  * @param  Level specifies the read protection level.
  *          This parameter can be one of the following values:
  *            @arg OB_RDP_LEVEL_0: No protection
  *            @arg OB_RDP_LEVEL_1: Read protection of the memory
  *            @arg OB_RDP_LEVEL_2: Full chip protection
  *   
  * @note WARNING: When enabling OB_RDP level 2 it's no more possible to go back to level 1 or 0
  *    
  * @retval HAL Status
  */
static HAL_StatusTypeDef FLASH_OB_RDP_LevelConfig(uint8_t Level)
{
  HAL_StatusTypeDef status = HAL_OK;
  
  /* Check the parameters */
  assert_param(IS_OB_RDP_LEVEL(Level));
    
  /* Wait for last operation to be completed */
  status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);

  if(status == HAL_OK)
  { 
    *(__IO uint8_t*)OPTCR_BYTE1_ADDRESS = Level;
  }
  
  return status;
}

/**
  * @brief  Program the FLASH User Option Byte: IWDG_SW / RST_STOP / RST_STDBY.    
  * @param  Iwdg Selects the IWDG mode
  *          This parameter can be one of the following values:
  *            @arg OB_IWDG_SW: Software IWDG selected
  *            @arg OB_IWDG_HW: Hardware IWDG selected
  * @param  Stop Reset event when entering STOP mode.
  *          This parameter  can be one of the following values:
  *            @arg OB_STOP_NO_RST: No reset generated when entering in STOP
  *            @arg OB_STOP_RST: Reset generated when entering in STOP
  * @param  Stdby Reset event when entering Standby mode.
  *          This parameter  can be one of the following values:
  *            @arg OB_STDBY_NO_RST: No reset generated when entering in STANDBY
  *            @arg OB_STDBY_RST: Reset generated when entering in STANDBY
  * @retval HAL Status
  */
static HAL_StatusTypeDef FLASH_OB_UserConfig(uint8_t Iwdg, uint8_t Stop, uint8_t Stdby)
{
  uint8_t optiontmp = 0xFF;
  HAL_StatusTypeDef status = HAL_OK;

  /* Check the parameters */
  assert_param(IS_OB_IWDG_SOURCE(Iwdg));
  assert_param(IS_OB_STOP_SOURCE(Stop));
  assert_param(IS_OB_STDBY_SOURCE(Stdby));

  /* Wait for last operation to be completed */
  status = FLASH_WaitForLastOperation((uint32_t)FLASH_TIMEOUT_VALUE);
  
  if(status == HAL_OK)
  {     
    /* Mask OPTLOCK, OPTSTRT, BOR_LEV and BFB2 bits */
    optiontmp =  (uint8_t)((*(__IO uint8_t *)OPTCR_BYTE0_ADDRESS) & (uint8_t)0x1F);

    /* Update User Option Byte */
    *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS = Iwdg | (uint8_t)(Stdby | (uint8_t)(Stop | ((uint8_t)optiontmp))); 
  }
  
  return status; 
}

/**
  * @brief  Set the BOR Level. 
  * @param  Level specifies the Option Bytes BOR Reset Level.
  *          This parameter can be one of the following values:
  *            @arg OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V
  *            @arg OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V
  *            @arg OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V
  *            @arg OB_BOR_OFF: Supply voltage ranges from 1.62 to 2.1 V
  * @retval HAL Status
  */
static HAL_StatusTypeDef FLASH_OB_BOR_LevelConfig(uint8_t Level)
{
  /* Check the parameters */
  assert_param(IS_OB_BOR_LEVEL(Level));

  /* Set the BOR Level */
  *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS &= (~FLASH_OPTCR_BOR_LEV);
  *(__IO uint8_t *)OPTCR_BYTE0_ADDRESS |= Level;
  
  return HAL_OK;
  
}

/**
  * @brief  Return the FLASH User Option Byte value.
  * @retval uint8_t FLASH User Option Bytes values: IWDG_SW(Bit0), RST_STOP(Bit1)
  *         and RST_STDBY(Bit2).
  */
static uint8_t FLASH_OB_GetUser(void)
{
  /* Return the User Option Byte */
  return ((uint8_t)(FLASH->OPTCR & 0xE0));
}

/**
  * @brief  Return the FLASH Write Protection Option Bytes value.
  * @retval uint16_t FLASH Write Protection Option Bytes value
  */
static uint16_t FLASH_OB_GetWRP(void)
{
  /* Return the FLASH write protection Register value */
  return (*(__IO uint16_t *)(OPTCR_BYTE2_ADDRESS));
}

/**
  * @brief  Returns the FLASH Read Protection level.
  * @retval FLASH ReadOut Protection Status:
  *         This parameter can be one of the following values:
  *            @arg OB_RDP_LEVEL_0: No protection
  *            @arg OB_RDP_LEVEL_1: Read protection of the memory
  *            @arg OB_RDP_LEVEL_2: Full chip protection
  */
static uint8_t FLASH_OB_GetRDP(void)
{
  uint8_t readstatus = OB_RDP_LEVEL_0;

  if((*(__IO uint8_t*)(OPTCR_BYTE1_ADDRESS) == (uint8_t)OB_RDP_LEVEL_2))
  {
    readstatus = OB_RDP_LEVEL_2;
  }
  else if((*(__IO uint8_t*)(OPTCR_BYTE1_ADDRESS) == (uint8_t)OB_RDP_LEVEL_0))
  {
    readstatus = OB_RDP_LEVEL_0;
  }
  else 
  {
    readstatus = OB_RDP_LEVEL_1;
  }

  return readstatus;
}

/**
  * @brief  Returns the FLASH BOR level.
  * @retval uint8_t The FLASH BOR level:
  *           - OB_BOR_LEVEL3: Supply voltage ranges from 2.7 to 3.6 V
  *           - OB_BOR_LEVEL2: Supply voltage ranges from 2.4 to 2.7 V
  *           - OB_BOR_LEVEL1: Supply voltage ranges from 2.1 to 2.4 V
  *           - OB_BOR_OFF   : Supply voltage ranges from 1.62 to 2.1 V  
  */
static uint8_t FLASH_OB_GetBOR(void)
{
  /* Return the FLASH BOR level */
  return (uint8_t)(*(__IO uint8_t *)(OPTCR_BYTE0_ADDRESS) & (uint8_t)0x0C);
}

/**
  * @}
  */
  
#endif /* HAL_FLASH_MODULE_ENABLED */

/**
  * @}
  */

/**
  * @}
  */

