<s>
ToFeT	B-Application
is	O
a	O
kinetic	O
Monte	O
Carlo	O
electronic	O
model	O
of	O
molecular	O
films	O
,	O
able	O
to	O
simulate	O
the	O
time-of-flight	O
experiment	O
(	O
ToF	O
)	O
,	O
field-effect	O
transistors	O
(	O
FeTs	O
)	O
.	O
</s>
<s>
As	O
its	O
input	O
,	O
ToFeT	B-Application
takes	O
a	O
description	O
of	O
the	O
film	O
at	O
a	O
molecular	O
level	O
:	O
a	O
description	O
of	O
the	O
position	O
of	O
all	O
molecules	O
and	O
the	O
interactions	O
between	O
them	O
.	O
</s>
<s>
As	O
its	O
output	O
,	O
ToFeT	B-Application
produces	O
electrical	O
characteristics	O
such	O
as	O
mobilities	O
,	O
JV	O
curves	O
,	O
and	O
transient	O
photocurrents	O
.	O
</s>
<s>
ToFeT	B-Application
thus	O
allows	O
the	O
microscopic	O
properties	O
of	O
a	O
film	O
to	O
be	O
related	O
to	O
its	O
macroscopic	O
electronic	O
properties	O
.	O
</s>
<s>
ToFeT	B-Application
is	O
an	O
open-source	O
project	O
,	O
used	O
by	O
academic	O
and	O
industrial	O
groups	O
around	O
the	O
world	O
.	O
</s>
<s>
The	O
current	O
focus	O
in	O
ToFeT	B-Application
's	O
development	O
is	O
to	O
treat	O
a	O
wider	O
range	O
of	O
materials	O
systems	O
,	O
and	O
reproduce	O
a	O
wider	O
range	O
of	O
experimental	O
measurements	O
.	O
</s>
<s>
In	O
Hebrew	O
,	O
the	O
word	O
"	O
Tofet	B-Application
"	O
stands	O
for	O
"	O
inferno	O
,	O
scene	O
of	O
horror	O
;	O
hell	O
"	O
,	O
thus	O
providing	O
a	O
fitting	O
indication	O
to	O
the	O
complexity	O
of	O
the	O
module	O
.	O
</s>
