<s>
Crocus	O
Technology	O
,	O
founded	O
in	O
2006	O
,	O
is	O
a	O
venture-capital-backed	O
semiconductor	O
startup	O
company	O
developing	O
magnetoresistive	B-General_Concept
random-access	I-General_Concept
memory	I-General_Concept
(	O
MRAM	B-General_Concept
)	O
technology	O
.	O
</s>
<s>
Thermal-assisted	B-General_Concept
switching	I-General_Concept
(	O
TAS	O
)	O
is	O
a	O
second-generation	O
approach	O
to	O
magnetoresistive	B-General_Concept
random-access	I-General_Concept
memory	I-General_Concept
(	O
MRAM	B-General_Concept
)	O
currently	O
being	O
developed	O
.	O
</s>
<s>
The	O
first	O
design	O
's	O
cell	O
,	O
which	O
was	O
proposed	O
by	O
James	O
M	O
.	O
Daughton	O
and	O
co-workers	O
,	O
had	O
a	O
heating	O
element	O
,	O
an	O
MRAM	B-General_Concept
bit	O
and	O
an	O
orthogonal	O
digit	O
line	O
,	O
and	O
used	O
a	O
low-Curie	O
point	O
ferromagnetic	O
material	O
as	O
the	O
storage	O
layer	O
.	O
</s>
<s>
This	O
approach	O
offers	O
multiple	O
advantages	O
over	O
previous	O
MRAM	B-General_Concept
technologies	O
:	O
</s>
<s>
Crocus	O
also	O
has	O
a	O
long-term	O
exclusive	O
license	O
to	O
MRAM-related	O
intellectual	O
property	O
developed	O
at	O
Spintec	O
,	O
CNRS	O
,	O
and	O
CEA	O
.	O
</s>
<s>
As	O
part	O
of	O
the	O
deal	O
,	O
both	O
companies	O
will	O
dedicate	O
special	O
equipment	O
to	O
Tower	O
’s	O
factory	O
,	O
and	O
Tower	O
will	O
fully	O
manufacture	O
Crocus’	O
MRAM	B-General_Concept
technology	O
in	O
its	O
200mm	O
Fab2	O
facility	O
.	O
</s>
