<s>
Spin	B-General_Concept
Hall	I-General_Concept
magnetoresistance	I-General_Concept
(	O
SMR	O
)	O
is	O
a	O
transport	O
phenomenon	O
that	O
is	O
found	O
in	O
some	O
electrical	O
conductors	O
that	O
have	O
at	O
least	O
one	O
surface	O
in	O
direct	O
contact	O
with	O
another	O
magnetic	O
material	O
due	O
to	O
changes	O
in	O
the	O
spin	O
current	O
that	O
are	O
present	O
in	O
metals	O
and	O
semiconductors	O
with	O
a	O
large	O
spin	O
Hall	O
angle	O
.	O
</s>
<s>
Spin	B-General_Concept
Hall	I-General_Concept
magnetoresistance	I-General_Concept
is	O
one	O
of	O
many	O
ways	O
in	O
which	O
the	O
electrical	O
resistance	O
of	O
a	O
material	O
is	O
influenced	O
by	O
the	O
spin	O
Hall	O
effect	O
.	O
</s>
<s>
The	O
spin	O
polarized	O
electrons	O
at	O
the	O
conductors	O
surface	O
are	O
able	O
to	O
interact	O
with	O
the	O
magnetization	O
of	O
a	O
magnetic	O
material	O
in	O
close	O
proximity	O
through	O
a	O
spin-transfer	B-General_Concept
torque	I-General_Concept
.	O
</s>
<s>
To	O
construct	O
a	O
device	O
that	O
exhibits	O
the	O
spin	B-General_Concept
Hall	I-General_Concept
magnetoresistance	I-General_Concept
,	O
a	O
multilayer	O
of	O
conductor	O
and	O
magnetic	O
material	O
is	O
needed	O
.	O
</s>
<s>
One	O
of	O
the	O
signatures	O
of	O
the	O
spin	B-General_Concept
Hall	I-General_Concept
magnetoresistance	I-General_Concept
is	O
that	O
the	O
change	O
in	O
resistance	O
is	O
observed	O
when	O
the	O
magnetization	O
of	O
the	O
insulator	O
is	O
rotated	O
with	O
respect	O
to	O
the	O
spin	O
axis	O
and	O
not	O
to	O
the	O
direction	O
of	O
the	O
charge	O
current	O
as	O
is	O
seen	O
in	O
anisotropic	O
magnetoresistance	O
.	O
</s>
<s>
Due	O
to	O
the	O
spin-transfer	B-General_Concept
torque	I-General_Concept
at	O
the	O
interface	O
of	O
the	O
conductor	O
and	O
magnet	O
,	O
a	O
spin	O
current	O
can	O
be	O
injected	O
from	O
the	O
metal	O
into	O
the	O
insulator	O
.	O
</s>
