<s>
Spin-transfer	B-General_Concept
torque	I-General_Concept
(	O
STT	O
)	O
is	O
an	O
effect	O
in	O
which	O
the	O
orientation	O
of	O
a	O
magnetic	O
layer	O
in	O
a	O
magnetic	O
tunnel	O
junction	O
or	O
spin	B-General_Concept
valve	I-General_Concept
can	O
be	O
modified	O
using	O
a	O
spin-polarized	O
current	O
.	O
</s>
<s>
Spin-transfer	B-General_Concept
torque	I-General_Concept
can	O
be	O
used	O
to	O
flip	O
the	O
active	O
elements	O
in	O
magnetic	O
random-access	O
memory	O
.	O
</s>
<s>
Spin-transfer	B-General_Concept
torque	I-General_Concept
magnetic	O
random-access	O
memory	O
(	O
STT-RAM	O
or	O
STT-MRAM	O
)	O
is	O
a	O
non-volatile	B-General_Concept
memory	I-General_Concept
with	O
near-zero	O
leakage	O
power	O
consumption	O
which	O
is	O
a	O
major	O
advantage	O
over	O
charge-based	O
memories	O
such	O
as	O
SRAM	B-Architecture
and	O
DRAM	O
.	O
</s>
<s>
STT-RAM	O
also	O
has	O
the	O
advantages	O
of	O
lower	O
power	O
consumption	O
and	O
better	O
scalability	O
than	O
conventional	O
magnetoresistive	B-General_Concept
random-access	I-General_Concept
memory	I-General_Concept
(	O
MRAM	B-General_Concept
)	O
which	O
uses	O
magnetic	O
fields	O
to	O
flip	O
the	O
active	O
elements	O
.	O
</s>
<s>
Spin-transfer	B-General_Concept
torque	I-General_Concept
technology	O
has	O
the	O
potential	O
to	O
make	O
possible	O
MRAM	B-General_Concept
devices	O
combining	O
low	O
current	O
requirements	O
and	O
reduced	O
cost	O
;	O
however	O
,	O
the	O
amount	O
of	O
current	O
needed	O
to	O
reorient	O
the	O
magnetization	O
is	O
presently	O
too	O
high	O
for	O
most	O
commercial	O
applications	O
,	O
and	O
the	O
reduction	O
of	O
this	O
current	O
density	O
alone	O
is	O
the	O
basis	O
for	O
present	O
academic	O
research	O
in	O
spin	O
electronics	O
.	O
</s>
<s>
In	O
2011	O
,	O
Qualcomm	O
presented	O
a	O
1	O
Mbit	O
Embedded	O
STT-MRAM	O
,	O
manufactured	O
in	O
TSMC	O
's	O
45nm	O
LP	O
technology	O
at	O
the	O
Symposium	O
on	O
VLSI	O
Circuits	O
.	O
</s>
<s>
In	O
May	O
2011	O
,	O
Russian	O
Nanotechnology	O
Corp	O
.	O
announced	O
an	O
investment	O
of	O
$300	O
million	O
in	O
Crocus	O
Nano	O
Electronics	O
(	O
a	O
joint	O
venture	O
with	O
Crocus	O
Technology	O
)	O
which	O
will	O
build	O
an	O
MRAM	B-General_Concept
factory	O
in	O
Moscow	O
,	O
Russia	O
.	O
</s>
<s>
In	O
2012	O
Everspin	O
Technologies	O
released	O
the	O
first	O
commercially	O
available	O
DDR3	O
dual	B-General_Concept
in-line	I-General_Concept
memory	I-General_Concept
module	I-General_Concept
ST-MRAM	O
which	O
has	O
a	O
capacity	O
of	O
64	O
Mb	O
.	O
</s>
<s>
In	O
June	O
2019	O
Everspin	O
Technologies	O
started	O
pilot	O
production	O
for	O
28nm	O
1	O
Gb	O
STT-MRAM	O
chips	O
.	O
</s>
<s>
Other	O
companies	O
working	O
on	O
STT-RAM	O
include	O
Avalanche	O
Technology	O
,	O
Crocus	O
Technology	O
and	O
Spin	B-General_Concept
Transfer	I-General_Concept
Technologies	O
.	O
</s>
