<s>
Selective	B-Algorithm
area	I-Algorithm
epitaxy	I-Algorithm
is	O
the	O
local	O
growth	O
of	O
epitaxial	O
layer	O
through	O
a	O
patterned	O
amorphous	O
dielectric	O
mask	O
(	O
typically	O
SiO2	O
or	O
Si3N4	O
)	O
deposited	O
on	O
a	O
semiconductor	O
substrate	O
.	O
</s>
<s>
SAE	O
can	O
be	O
executed	O
in	O
various	O
epitaxial	O
growth	O
methods	O
such	O
as	O
molecular	B-Algorithm
beam	I-Algorithm
epitaxy	I-Algorithm
(	O
MBE	O
)	O
,	O
metalorganic	B-Algorithm
vapour	I-Algorithm
phase	I-Algorithm
epitaxy	I-Algorithm
(	O
MOVPE	B-Algorithm
)	O
and	O
chemical	B-Algorithm
beam	I-Algorithm
epitaxy	I-Algorithm
(	O
CBE	O
)	O
.	O
</s>
<s>
By	O
SAE	O
,	O
semiconductor	O
nanostructures	O
such	O
as	O
quantum	O
dots	O
and	O
nanowires	B-Architecture
can	O
be	O
grown	O
to	O
their	O
designed	O
places	O
.	O
</s>
<s>
Electron	B-Architecture
beam	I-Architecture
lithography	I-Architecture
is	O
widely	O
used	O
due	O
to	O
its	O
nanometer	O
resolution	O
.	O
</s>
<s>
This	O
is	O
employed	O
in	O
template	O
assisted	O
selective	B-Algorithm
area	I-Algorithm
epitaxy	I-Algorithm
(	O
TASE	O
)	O
,	O
where	O
deep	O
patterns	O
in	O
the	O
mask	O
are	O
used	O
as	O
a	O
template	O
for	O
the	O
whole	O
semiconductor	O
structure	O
and	O
the	O
growth	O
is	O
stopped	O
before	O
the	O
mask	O
level	O
.	O
</s>
<s>
SAE	O
grown	O
nanowires	B-Architecture
and	O
epitaxial	O
lateral	O
overgrown	O
structures	O
(	O
ELO	O
)	O
are	O
an	O
example	O
of	O
structures	O
that	O
are	O
engineered	O
by	O
SAE	O
growth	O
conditions	O
.	O
</s>
<s>
In	O
nanowire	B-Architecture
growth	O
,	O
the	O
growth	O
rate	O
of	O
lateral	O
facets	O
is	O
suppressed	O
and	O
the	O
structure	O
grows	O
only	O
in	O
vertical	O
direction	O
.	O
</s>
