<s>
In	O
MOSFETs	B-Architecture
,	O
reverse	B-Algorithm
short-channel	I-Algorithm
effect	I-Algorithm
(	O
RSCE	O
)	O
is	O
an	O
increase	O
of	O
threshold	O
voltage	O
with	O
decreasing	O
channel	O
length	O
;	O
this	O
is	O
the	O
opposite	O
of	O
the	O
usual	O
short-channel	O
effect	O
.	O
</s>
<s>
To	O
combat	O
drain-induced	B-Algorithm
barrier	I-Algorithm
lowering	I-Algorithm
(	O
DIBL	B-Algorithm
)	O
,	O
MOSFET	B-Architecture
substrate	O
near	O
source	O
and	O
drain	O
region	O
are	O
heavily	O
doped	O
(	O
p+	O
in	O
case	O
of	O
NMOS	O
and	O
n+	O
in	O
case	O
of	O
PMOS	O
)	O
to	O
reduce	O
the	O
width	O
of	O
the	O
depletion	O
region	O
in	O
the	O
vicinity	O
of	O
source/substrate	O
and	O
drain/substrate	O
junctions	O
(	O
called	O
halo	O
doping	O
to	O
describe	O
the	O
limitation	O
of	O
this	O
heavy	O
doping	O
to	O
the	O
immediate	O
vicinity	O
of	O
the	O
junctions	O
)	O
.	O
</s>
