<s>
Read-mostly	B-General_Concept
memory	I-General_Concept
(	O
RMM	B-General_Concept
)	O
is	O
a	O
type	O
of	O
memory	O
that	O
can	O
be	O
read	O
fast	O
,	O
but	O
written	O
to	O
only	O
slowly	O
.	O
</s>
<s>
In	O
1970	O
,	O
it	O
was	O
used	O
by	O
Intel	O
and	O
Energy	O
Conversion	O
Devices	O
to	O
refer	O
to	O
a	O
new	O
type	O
of	O
amorphous	O
and	O
crystalline	O
nonvolatile	B-General_Concept
and	O
reprogrammable	O
semiconductor	O
memory	O
(	O
phase-change	B-Device
memory	I-Device
aka	O
PCM/PRAM	O
)	O
.	O
</s>
<s>
However	O
,	O
it	O
was	O
also	O
used	O
to	O
refer	O
to	O
reprogrammable	B-General_Concept
memory	I-General_Concept
(	O
REPROM	B-General_Concept
)	O
and	O
magnetic-core	O
memory	O
.	O
</s>
<s>
The	O
term	O
has	O
mostly	O
fallen	O
into	O
disuse	O
,	O
but	O
is	O
sometimes	O
used	O
referring	O
to	O
electrically	B-General_Concept
erasable	I-General_Concept
programmable	I-General_Concept
read-only	I-General_Concept
(	O
EEPROM	B-General_Concept
)	O
or	O
flash	B-Device
memory	I-Device
today	O
.	O
</s>
