<s>
Random	B-Algorithm
dopant	I-Algorithm
fluctuation	I-Algorithm
(	O
RDF	O
)	O
is	O
a	O
form	O
of	O
process	O
variation	O
resulting	O
from	O
variation	O
in	O
the	O
implanted	O
impurity	O
concentration	O
.	O
</s>
<s>
In	O
MOSFET	B-Architecture
transistors	B-Application
,	O
RDF	O
in	O
the	O
channel	O
region	O
can	O
alter	O
the	O
transistor	B-Application
's	O
properties	O
,	O
especially	O
threshold	O
voltage	O
.	O
</s>
<s>
In	O
newer	O
process	O
technologies	O
RDF	O
has	O
a	O
larger	O
effect	O
because	O
the	O
total	O
number	O
of	O
dopants	O
is	O
fewer	O
,	O
and	O
the	O
addition	O
or	O
deletion	O
of	O
a	O
few	O
impurity	O
atoms	O
can	O
significantly	O
alter	O
transistor	B-Application
properties	O
.	O
</s>
<s>
RDF	O
is	O
a	O
local	O
form	O
of	O
process	O
variation	O
,	O
meaning	O
that	O
two	O
neighbouring	O
transistors	B-Application
may	O
have	O
significantly	O
different	O
dopant	O
concentrations	O
.	O
</s>
