<s>
The	O
proximity	B-Algorithm
effect	I-Algorithm
in	O
electron	B-Architecture
beam	I-Architecture
lithography	I-Architecture
(	O
EBL	O
)	O
is	O
the	O
phenomenon	O
that	O
the	O
exposure	O
dose	O
distribution	O
,	O
and	O
hence	O
the	O
developed	O
pattern	O
,	O
is	O
wider	O
than	O
the	O
scanned	O
pattern	O
due	O
to	O
the	O
interactions	O
of	O
the	O
primary	O
beam	O
electrons	O
with	O
the	O
resist	O
and	O
substrate	O
.	O
</s>
<s>
When	O
electron	B-Architecture
beam	I-Architecture
lithography	I-Architecture
is	O
performed	O
on	O
substrates	O
with	O
'	O
heavy	O
 '	O
films	O
,	O
such	O
as	O
gold	O
coatings	O
,	O
the	O
backscatter	O
effect	O
will	O
(	O
depending	O
on	O
thickness	O
)	O
significantly	O
increase	O
.	O
</s>
<s>
In	O
the	O
latter	O
case	O
,	O
a	O
secondary	O
electron	O
is	O
created	O
and	O
the	O
energy	O
state	O
of	O
the	O
atom	O
changes	O
,	O
which	O
can	O
result	O
in	O
the	O
emission	O
of	O
Auger	O
electrons	O
or	O
X-rays	B-Library
.	O
</s>
