<s>
A	O
programmable	B-General_Concept
read-only	I-General_Concept
memory	I-General_Concept
(	O
PROM	O
)	O
is	O
a	O
form	O
of	O
digital	O
memory	O
where	O
the	O
contents	O
can	O
be	O
changed	O
once	O
after	O
manufacture	O
of	O
the	O
device	O
.	O
</s>
<s>
It	O
is	O
one	O
type	O
of	O
read-only	B-Device
memory	I-Device
(	O
ROM	B-Device
)	O
.	O
</s>
<s>
PROMs	O
are	O
used	O
in	O
digital	O
electronic	O
devices	O
to	O
store	O
permanent	O
data	O
,	O
usually	O
low	O
level	O
programs	O
such	O
as	O
firmware	B-Application
or	O
microcode	B-Device
.	O
</s>
<s>
The	O
key	O
difference	O
from	O
a	O
standard	O
ROM	B-Device
is	O
that	O
the	O
data	O
is	O
written	O
into	O
a	O
ROM	B-Device
during	O
manufacture	O
,	O
while	O
with	O
a	O
PROM	O
the	O
data	O
is	O
programmed	O
into	O
them	O
after	O
manufacture	O
.	O
</s>
<s>
PROMs	O
may	O
be	O
used	O
where	O
the	O
volume	O
required	O
does	O
not	O
make	O
a	O
factory-programmed	O
ROM	B-Device
economical	O
,	O
or	O
during	O
development	O
of	O
a	O
system	O
that	O
may	O
ultimately	O
be	O
converted	O
to	O
ROMs	O
in	O
a	O
mass	O
produced	O
version	O
.	O
</s>
<s>
These	O
types	O
of	O
memories	O
are	O
frequently	O
used	O
in	O
microcontrollers	B-Architecture
,	O
video	B-Device
game	I-Device
consoles	I-Device
,	O
mobile	O
phones	O
,	O
radio-frequency	B-Application
identification	I-Application
(	O
RFID	B-Application
)	O
tags	O
,	O
implantable	O
medical	O
devices	O
,	O
high-definition	B-Protocol
multimedia	I-Protocol
interfaces	I-Protocol
(	O
HDMI	B-Protocol
)	O
and	O
in	O
many	O
other	O
consumer	O
and	O
automotive	O
electronics	O
products	O
.	O
</s>
<s>
OTP	O
NVM	O
is	O
characterized	O
,	O
over	O
other	O
types	O
of	O
NVM	O
like	O
eFuse	O
or	O
EEPROM	B-General_Concept
,	O
by	O
offering	O
a	O
low	O
power	O
,	O
small	O
area	O
footprint	O
memory	O
structure	O
.	O
</s>
<s>
Texas	O
Instruments	O
developed	O
a	O
MOS	O
gate	B-Algorithm
oxide	I-Algorithm
breakdown	O
antifuse	O
in	O
1979	O
.	O
</s>
<s>
Another	O
form	O
of	O
one-time	B-General_Concept
programmable	I-General_Concept
memory	O
device	O
uses	O
the	O
same	O
semiconductor	O
chip	O
as	O
an	O
ultraviolet-erasable	O
programmable	O
read-only	O
memory	O
(	O
UV-EPROM	O
)	O
,	O
but	O
the	O
finished	O
device	O
is	O
put	O
into	O
an	O
opaque	O
package	O
,	O
instead	O
of	O
the	O
expensive	O
ceramic	O
package	O
with	O
transparent	O
quartz	O
window	O
required	O
for	O
erasing	O
.	O
</s>
<s>
These	O
devices	O
are	O
programmed	O
with	O
the	O
same	O
methods	O
as	O
the	O
UV	B-General_Concept
EPROM	I-General_Concept
parts	O
but	O
are	O
less	O
costly	O
.	O
</s>
<s>
Embedded	O
controllers	O
may	O
be	O
available	O
in	O
both	O
field-erasable	O
and	O
one-time	O
styles	O
,	O
allowing	O
a	O
cost	O
saving	O
in	O
volume	O
production	O
without	O
the	O
expense	O
and	O
lead	O
time	O
of	O
factory-programmed	O
mask	B-Device
ROM	I-Device
chips	O
.	O
</s>
<s>
Although	O
antifuse-based	O
PROM	O
has	O
been	O
available	O
for	O
decades	O
,	O
it	O
was	O
n’t	O
available	O
in	O
standard	O
CMOS	B-Device
until	O
2001	O
when	O
Kilopass	O
Technology	O
Inc	O
.	O
patented	O
1T	O
,	O
2T	O
,	O
and	O
3.5T	O
antifuse	O
bit	O
cell	O
technologies	O
using	O
a	O
standard	O
CMOS	B-Device
process	O
,	O
enabling	O
integration	O
of	O
PROM	O
into	O
logic	O
CMOS	B-Device
chips	O
.	O
</s>
<s>
The	O
first	O
process	O
node	O
antifuse	O
can	O
be	O
implemented	O
in	O
standard	O
CMOS	B-Device
is	O
0.18um	O
.	O
</s>
<s>
Since	O
the	O
gate	B-Algorithm
oxide	I-Algorithm
breakdown	O
is	O
less	O
than	O
the	O
junction	O
breakdown	O
,	O
special	O
diffusion	O
steps	O
were	O
not	O
required	O
to	O
create	O
the	O
antifuse	O
programming	O
element	O
.	O
</s>
