<s>
A	O
polyfuse	B-General_Concept
is	O
a	O
one-time-programmable	O
memory	O
component	O
used	O
in	O
semiconductor	O
circuits	O
for	O
storing	O
unique	O
data	B-General_Concept
like	O
chip	O
identification	O
numbers	O
or	O
memory	O
repair	O
data	B-General_Concept
,	O
but	O
more	O
usually	O
small	O
to	O
medium	O
volume	O
production	O
of	O
read	O
only	O
memory	O
devices	O
or	O
microcontroller	O
chips	O
.	O
</s>
<s>
Polyfuses	B-General_Concept
were	O
developed	O
to	O
replace	O
the	O
earlier	O
nickel-chromium	O
(	O
ni-chrome	O
)	O
fuses	O
.	O
</s>
<s>
The	O
first	O
polyfuses	B-General_Concept
consisted	O
of	O
a	O
polysilicon	O
line	O
,	O
which	O
was	O
programmed	O
by	O
applying	O
a	O
high	O
(	O
10V-15V	O
)	O
voltage	O
across	O
the	O
device	O
.	O
</s>
<s>
An	O
unprogrammed	O
polyfuse	B-General_Concept
would	O
be	O
registered	O
as	O
a	O
logical	O
one	O
.	O
</s>
<s>
Modern	O
polyfuses	B-General_Concept
consist	O
of	O
a	O
silicided	O
polysilicon	O
line	O
,	O
which	O
is	O
also	O
programmed	O
by	O
applying	O
a	O
voltage	O
across	O
the	O
device	O
.	O
</s>
<s>
Polyfuses	B-General_Concept
have	O
been	O
shown	O
to	O
reliably	O
store	O
programmed	O
data	B-General_Concept
and	O
can	O
be	O
programmed	O
at	O
high	O
speed	O
.	O
</s>
