<s>
Plasma	B-Algorithm
etching	I-Algorithm
is	O
a	O
form	O
of	O
plasma	O
processing	O
used	O
to	O
fabricate	O
integrated	O
circuits	O
.	O
</s>
<s>
Plasma	B-Algorithm
etching	I-Algorithm
can	O
be	O
divided	O
into	O
two	O
main	O
types	O
of	O
interaction	O
:	O
</s>
<s>
There	O
are	O
different	O
ways	O
to	O
change	O
the	O
plasma	O
chemistry	O
and	O
get	O
different	O
kinds	O
of	O
plasma	B-Algorithm
etching	I-Algorithm
or	O
plasma	O
depositions	O
.	O
</s>
<s>
For	O
some	O
difficult	O
materials	O
(	O
such	O
as	O
magnetic	O
materials	O
)	O
,	O
the	O
volatility	O
can	O
only	O
be	O
obtained	O
when	O
the	O
wafer	B-Architecture
temperature	O
is	O
increased	O
.	O
</s>
<s>
Volatile	O
products	O
desorb	O
in	O
the	O
plasma	O
phase	O
and	O
help	O
the	O
plasma	B-Algorithm
etching	I-Algorithm
process	O
as	O
the	O
material	O
interacts	O
with	O
the	O
sample	O
's	O
walls	O
.	O
</s>
<s>
Different	O
principles	O
that	O
affect	O
a	O
sample	O
's	O
ability	O
for	O
plasma	B-Algorithm
etching	I-Algorithm
:	O
</s>
<s>
Plasma	B-Algorithm
etching	I-Algorithm
can	O
change	O
the	O
surface	O
contact	O
angles	O
,	O
such	O
as	O
hydrophilic	O
to	O
hydrophobic	O
,	O
or	O
vice	O
versa	O
.	O
</s>
<s>
Argon	O
plasma	B-Algorithm
etching	I-Algorithm
has	O
reported	O
to	O
enhance	O
contact	O
angle	O
from	O
52	O
deg	O
to	O
68	O
deg	O
,	O
and	O
,	O
Oxygen	O
plasma	B-Algorithm
etching	I-Algorithm
to	O
reduce	O
contact	O
angle	O
from	O
52	O
deg	O
to	O
19	O
deg	O
for	O
CFRP	O
composites	O
for	O
bone	O
plate	O
applications	O
.	O
</s>
<s>
Plasma	B-Algorithm
etching	I-Algorithm
has	O
been	O
reported	O
to	O
reduce	O
the	O
surface	O
roughness	O
from	O
hundreds	O
of	O
nanometers	O
to	O
as	O
much	O
lower	O
as	O
3nm	O
for	O
metals	O
.	O
</s>
<s>
Pressure	O
influences	O
the	O
plasma	B-Algorithm
etching	I-Algorithm
process	O
.	O
</s>
<s>
For	O
plasma	B-Algorithm
etching	I-Algorithm
to	O
happen	O
,	O
the	O
chamber	O
has	O
to	O
be	O
under	O
low	O
pressure	O
,	O
less	O
than	O
100	O
Pa	O
.	O
</s>
<s>
One	O
example	O
of	O
plasma	B-Algorithm
etching	I-Algorithm
is	O
shown	O
here	O
.	O
</s>
<s>
One	O
form	O
to	O
use	O
gas	O
as	O
plasma	B-Algorithm
etching	I-Algorithm
is	O
hydrogen	O
plasma	B-Algorithm
etching	I-Algorithm
.	O
</s>
<s>
A	O
plasma	B-Algorithm
etcher	I-Algorithm
,	O
or	O
etching	O
tool	O
,	O
is	O
a	O
tool	O
used	O
in	O
the	O
production	O
of	O
semiconductor	O
devices	O
.	O
</s>
<s>
A	O
plasma	B-Algorithm
etcher	I-Algorithm
produces	O
a	O
plasma	O
from	O
a	O
process	O
gas	O
,	O
typically	O
oxygen	O
or	O
a	O
fluorine-bearing	O
gas	O
,	O
using	O
a	O
high	O
frequency	O
electric	O
field	O
,	O
typically	O
13.56	B-Algorithm
MHz	I-Algorithm
.	O
</s>
<s>
A	O
silicon	B-Architecture
wafer	I-Architecture
is	O
placed	O
in	O
the	O
plasma	B-Algorithm
etcher	I-Algorithm
,	O
and	O
the	O
air	O
is	O
evacuated	O
from	O
the	O
process	O
chamber	O
using	O
a	O
system	O
of	O
vacuum	O
pumps	O
.	O
</s>
<s>
Industrial	O
plasma	B-Algorithm
etchers	I-Algorithm
often	O
feature	O
plasma	O
confinement	O
to	O
enable	O
repeatable	O
etch	O
rates	O
and	O
precise	O
spatial	O
distributions	O
in	O
plasmas	O
.	O
</s>
<s>
Plasma	B-Algorithm
etching	I-Algorithm
is	O
currently	O
used	O
to	O
process	O
semiconducting	O
materials	O
for	O
their	O
use	O
in	O
the	O
fabrication	O
of	O
electronics	O
.	O
</s>
<s>
For	O
example	O
,	O
plasma	B-Algorithm
etching	I-Algorithm
can	O
be	O
used	O
to	O
create	O
deep	O
trenches	O
on	O
the	O
surface	O
of	O
silicon	O
for	O
uses	O
in	O
microelectromechanical	B-Architecture
systems	I-Architecture
.	O
</s>
<s>
This	O
application	O
suggests	O
that	O
plasma	B-Algorithm
etching	I-Algorithm
also	O
has	O
the	O
potential	O
to	O
play	O
a	O
major	O
role	O
in	O
the	O
production	O
of	O
microelectronics	O
.	O
</s>
<s>
Hydrogen	O
plasma	B-Algorithm
etching	I-Algorithm
,	O
in	O
particular	O
,	O
has	O
other	O
interesting	O
applications	O
.	O
</s>
<s>
When	O
used	O
in	O
the	O
process	O
of	O
etching	O
semiconductors	O
,	O
hydrogen	O
plasma	B-Algorithm
etching	I-Algorithm
has	O
been	O
shown	O
to	O
be	O
effective	O
in	O
removing	O
portions	O
of	O
native	O
oxides	O
found	O
on	O
the	O
surface	O
.	O
</s>
<s>
Hydrogen	O
plasma	B-Algorithm
etching	I-Algorithm
also	O
tends	O
to	O
leave	O
a	O
clean	O
and	O
chemically	O
balanced	O
surface	O
,	O
which	O
is	O
ideal	O
for	O
a	O
number	O
of	O
applications	O
.	O
</s>
<s>
Oxygen	O
plasma	B-Algorithm
etching	I-Algorithm
can	O
be	O
used	O
for	O
anisotropic	O
deep-etching	O
of	O
diamond	O
nanostructures	O
by	O
application	O
of	O
high	O
bias	O
in	O
inductively	O
coupled	O
plasma/reactive	O
ion	O
etching	O
(	O
ICP/RIE	O
)	O
reactor	O
.	O
</s>
<s>
Plasma	O
can	O
be	O
used	O
to	O
grow	O
a	O
silicon	O
dioxide	O
film	O
on	O
a	O
silicon	B-Architecture
wafer	I-Architecture
(	O
using	O
an	O
oxygen	O
plasma	O
)	O
,	O
or	O
can	O
be	O
used	O
to	O
remove	O
silicon	O
dioxide	O
by	O
using	O
a	O
fluorine	O
bearing	O
gas	O
.	O
</s>
<s>
When	O
used	O
in	O
conjunction	O
with	O
photolithography	B-Algorithm
,	O
silicon	O
dioxide	O
can	O
be	O
selectively	O
applied	O
or	O
removed	O
to	O
trace	O
paths	O
for	O
circuits	O
.	O
</s>
<s>
This	O
can	O
be	O
done	O
with	O
a	O
plasma	B-Algorithm
etcher	I-Algorithm
.	O
</s>
<s>
This	O
is	O
also	O
done	O
in	O
a	O
special	O
plasma	B-Algorithm
etcher	I-Algorithm
,	O
called	O
an	O
asher	O
.	O
</s>
<s>
Plasma	B-Algorithm
etchers	I-Algorithm
are	O
also	O
used	O
for	O
de-layering	O
integrated	O
circuits	O
in	O
failure	O
analysis	O
.	O
</s>
