<s>
The	O
planar	B-Algorithm
process	I-Algorithm
is	O
a	O
manufacturing	B-Architecture
process	I-Architecture
used	O
in	O
the	O
semiconductor	O
industry	O
to	O
build	O
individual	O
components	O
of	O
a	O
transistor	B-Application
,	O
and	O
in	O
turn	O
,	O
connect	O
those	O
transistors	B-Application
together	O
.	O
</s>
<s>
The	O
process	O
utilizes	O
the	O
surface	B-Application
passivation	I-Application
and	O
thermal	B-Algorithm
oxidation	I-Algorithm
methods	O
.	O
</s>
<s>
The	O
planar	B-Algorithm
process	I-Algorithm
was	O
developed	O
at	O
Fairchild	O
Semiconductor	O
in	O
1959	O
.	O
</s>
<s>
Together	O
with	O
the	O
use	O
of	O
metallization	O
,	O
and	O
the	O
concepts	O
of	O
p	O
–	O
n	O
junction	O
isolation	O
and	O
surface	B-Application
passivation	I-Application
,	O
it	O
is	O
possible	O
to	O
create	O
circuits	O
on	O
a	O
single	O
silicon	O
crystal	O
slice	O
(	O
a	O
wafer	O
)	O
from	O
a	O
monocrystalline	O
silicon	O
boule	B-Algorithm
.	O
</s>
<s>
The	O
final	O
steps	O
involves	O
oxidizing	B-Algorithm
the	O
entire	O
wafer	O
with	O
an	O
SiO2	O
layer	O
,	O
etching	O
contact	O
vias	O
to	O
the	O
transistors	B-Application
,	O
and	O
depositing	O
a	O
covering	O
metal	O
layer	O
over	O
the	O
oxide	O
,	O
thus	O
connecting	O
the	O
transistors	B-Application
without	O
manually	O
wiring	O
them	O
together	O
.	O
</s>
<s>
At	O
a	O
1958	O
Electrochemical	O
Society	O
meeting	O
,	O
Mohamed	O
Atalla	O
presented	O
a	O
paper	O
about	O
the	O
surface	B-Application
passivation	I-Application
of	O
PN	O
junctions	O
by	O
thermal	B-Algorithm
oxidation	I-Algorithm
,	O
based	O
on	O
his	O
1957	O
BTL	O
memos	O
.	O
</s>
<s>
Taking	O
advantage	O
of	O
silicon	O
dioxide	O
's	O
passivating	O
effect	O
on	O
the	O
silicon	O
surface	O
,	O
Hoerni	O
proposed	O
to	O
make	O
transistors	B-Application
that	O
were	O
protected	O
by	O
a	O
layer	O
of	O
silicon	O
dioxide	O
.	O
</s>
<s>
This	O
led	O
to	O
the	O
first	O
successful	O
product	O
implementation	O
of	O
the	O
Atalla	O
silicon	O
transistor	B-Application
passivation	B-Application
technique	O
by	O
thermal	B-Algorithm
oxide	I-Algorithm
.	O
</s>
<s>
Jean	O
Hoerni	O
,	O
during	O
his	O
working	O
at	O
Fairchild	O
Semiconductor	O
,	O
had	O
first	O
patented	O
the	O
planar	B-Algorithm
process	I-Algorithm
in	O
1959	O
.	O
</s>
<s>
Together	O
with	O
the	O
use	O
of	O
metallization	O
(	O
to	O
join	O
together	O
the	O
integrated	O
circuits	O
)	O
,	O
and	O
the	O
concept	O
of	O
p	O
–	O
n	O
junction	O
isolation	O
(	O
from	O
Kurt	O
Lehovec	O
)	O
,	O
the	O
researchers	O
at	O
Fairchild	O
were	O
able	O
to	O
create	O
circuits	O
on	O
a	O
single	O
silicon	O
crystal	O
slice	O
(	O
a	O
wafer	O
)	O
from	O
a	O
monocrystalline	O
silicon	O
boule	B-Algorithm
.	O
</s>
<s>
In	O
1959	O
,	O
Robert	O
Noyce	O
built	O
on	O
Hoerni	O
's	O
work	O
with	O
his	O
conception	O
of	O
an	O
integrated	O
circuit	O
(	O
IC	O
)	O
,	O
which	O
added	O
a	O
layer	O
of	O
metal	O
to	O
the	O
top	O
of	O
Hoerni	O
's	O
basic	O
structure	O
to	O
connect	O
different	O
components	O
,	O
such	O
as	O
transistors	B-Application
,	O
capacitors	O
,	O
or	O
resistors	O
,	O
located	O
on	O
the	O
same	O
piece	O
of	O
silicon	O
.	O
</s>
<s>
The	O
planar	B-Algorithm
process	I-Algorithm
provided	O
a	O
powerful	O
way	O
of	O
implementing	O
an	O
integrated	O
circuit	O
that	O
was	O
superior	O
to	O
earlier	O
conceptions	O
of	O
the	O
integrated	O
circuit	O
.	O
</s>
<s>
Early	O
versions	O
of	O
the	O
planar	B-Algorithm
process	I-Algorithm
used	O
a	O
photolithography	B-Algorithm
process	O
using	O
near-ultraviolet	O
light	O
from	O
a	O
mercury	O
vapor	O
lamp	O
.	O
</s>
