<s>
Monolayer	B-Algorithm
doping	I-Algorithm
(	O
MLD	O
)	O
in	O
semiconductor	O
production	O
is	O
a	O
well	O
controlled	O
,	O
wafer-scale	O
surface	O
doping	B-Algorithm
technique	O
first	O
developed	O
at	O
the	O
University	O
of	O
California	O
,	O
Berkeley	O
,	O
in	O
2007	O
.	O
</s>
<s>
This	O
work	O
is	O
aimed	O
for	O
attaining	O
controlled	O
doping	B-Algorithm
of	O
semiconductor	O
materials	O
with	O
atomic	O
accuracy	O
,	O
especially	O
at	O
nanoscale	O
,	O
which	O
is	O
not	O
easily	O
obtained	O
by	O
other	O
existing	O
technologies	O
.	O
</s>
<s>
MLD	O
differs	O
from	O
other	O
conventional	O
doping	B-Algorithm
techniques	O
such	O
as	O
spin-on-dopants	O
(	O
SODs	O
)	O
and	O
gas	O
phase	O
doping	B-Algorithm
techniques	O
in	O
the	O
way	O
of	O
dopant	O
dose	O
control	O
.	O
</s>
<s>
Combined	O
with	O
the	O
excellent	O
dopant	O
dose	O
uniformity	O
and	O
coverage	O
in	O
MLD	O
,	O
it	O
is	O
especially	O
attractive	O
for	O
doping	B-Algorithm
nonplanar	O
devices	O
such	O
as	O
fin-FETs	O
and	O
nanowires	O
.	O
</s>
<s>
Compared	O
to	O
low-energy	O
ion-implantation	O
into	O
a	O
screening	O
film	O
followed	O
by	O
in-diffusion	O
,	O
the	O
MLD	O
technique	O
requires	O
a	O
lower	O
thermal	O
budget	O
and	O
allows	O
conformal	O
doping	B-Algorithm
on	O
topographic	O
features	O
.	O
</s>
<s>
The	O
MLD	O
process	O
is	O
applicable	O
for	O
both	O
p	O
-	O
and	O
n-doping	O
of	O
various	O
nanostructured	O
materials	O
,	O
including	O
conventional	O
planar	O
substrates	O
,	O
nanobelts	O
and	O
nanowires	O
,	O
which	O
are	O
fabricated	O
by	O
either	O
the	O
‘	O
bottom-up	O
’	O
or	O
‘	O
top-down	O
’	O
approaches	O
,	O
making	O
it	O
highly	O
versatile	O
for	O
various	O
applications	O
.	O
</s>
<s>
In	O
p-type	O
doping	B-Algorithm
of	O
silicon	O
,	O
a	O
covalently	O
anchored	O
monolayer	O
of	O
allylboronic	O
acid	O
pinacol	O
ester	O
is	O
formed	O
on	O
the	O
surface	O
as	O
the	O
boron	O
precursor	O
while	O
a	O
monolayer	O
of	O
diethyl	O
1-propylphosphonate	O
is	O
used	O
as	O
the	O
phosphorus	O
precursor	O
in	O
n-type	O
doping	B-Algorithm
.	O
</s>
<s>
Moreover	O
,	O
the	O
doping	B-Algorithm
profiles	O
can	O
be	O
readily	O
tuned	O
through	O
optimization	O
of	O
the	O
annealing	O
conditions	O
.	O
</s>
<s>
In	O
this	O
case	O
,	O
the	O
high	O
surface	O
doping	B-Algorithm
density	O
with	O
sharp	O
spatial	O
decay	O
can	O
be	O
obtained	O
by	O
using	O
this	O
MLD	O
method	O
with	O
low	O
anneal	O
temperatures	O
and	O
short	O
times	O
for	O
the	O
formation	O
of	O
USJs	O
.	O
</s>
