<s>
Magneto-Electric	B-Architecture
Spin-Orbit	I-Architecture
(	O
MESO	O
)	O
is	O
a	O
technology	O
designed	O
for	O
constructing	O
scalable	O
integrated	O
circuits	O
,	O
that	O
works	O
with	O
a	O
different	O
operating	O
principle	O
than	O
CMOS	B-Device
devices	O
such	O
as	O
MOSFETs	O
,	O
proposed	O
by	O
Intel	O
,	O
that	O
is	O
compatible	O
with	O
CMOS	B-Device
device	O
manufacturing	O
techniques	O
and	O
machinery	O
.	O
</s>
<s>
Before	O
the	O
introduction	O
of	O
MESO	O
,	O
Intel	O
evaluated	O
17	O
different	O
device	O
architectures	O
for	O
"	O
Beyond	O
CMOS	B-Device
"	O
scaling	O
which	O
aims	O
to	O
circumvent	O
scaling	O
challenges	O
present	O
with	O
CMOS	B-Device
devices	O
such	O
as	O
MOSFETs	O
used	O
in	O
integrated	O
circuits	O
.	O
</s>
<s>
These	O
architectures	O
were	O
made	O
with	O
production	O
processes	O
compatible	O
with	O
those	O
used	O
for	O
CMOS	B-Device
devices	O
since	O
some	O
CMOS	B-Device
devices	O
are	O
still	O
necessary	O
for	O
interfacing	O
with	O
other	O
circuits	O
and	O
for	O
providing	O
the	O
clock	O
signal	O
for	O
an	O
integrated	O
circuit	O
,	O
and	O
for	O
reusing	O
existing	O
production	O
equipment	O
:	O
Tunneling	O
FETs	O
,	O
Graphene	O
P-N	O
junctions	O
,	O
ITFETs	O
,	O
BisFET	O
,	O
SpinFETs	O
,	O
all	O
spin	O
logic	O
,	O
spin	O
torque	O
oscillators	O
,	O
domain	O
wall	O
logic	O
,	O
spin	O
torque	O
majority	O
,	O
spin	O
torque	O
triad	O
,	O
spin	O
wave	O
device	O
,	O
nano	O
magnet	O
logic	O
,	O
charge	O
spin	O
logic	O
,	O
Piezo	O
FETs	O
,	O
MITFETs	O
,	O
FEFETs	O
and	O
negative	O
capacitance	O
FETs	O
were	O
tested	O
and	O
it	O
was	O
found	O
that	O
none	O
offered	O
both	O
improved	O
performance	O
characteristics	O
and	O
lower	O
power	O
consumption	O
compared	O
with	O
CMOS	B-Device
.	O
</s>
<s>
According	O
to	O
VentureBeat	O
,	O
simulations	O
showed	O
that	O
,	O
on	O
a	O
32-bit	O
ALU	O
,	O
MESO	O
devices	O
offer	O
both	O
higher	O
performance	O
(	O
processing	O
speed	O
in	O
TOPS	O
per	O
cm2	O
)	O
and	O
lower	O
power	O
density	O
than	O
CMOS	B-Device
HP	O
devices	O
,	O
which	O
had	O
the	O
highest	O
performance	O
among	O
all	O
other	O
devices	O
except	O
MESO	O
.	O
</s>
<s>
This	O
mechanism	O
is	O
analogous	O
to	O
how	O
a	O
CMOS	B-Device
device	O
operates	O
with	O
the	O
source	O
,	O
gate	O
and	O
drain	O
electrodes	O
working	O
together	O
to	O
form	O
a	O
logic	O
gate	O
.	O
</s>
<s>
Compared	O
to	O
CMOS	B-Device
,	O
MESO	O
circuits	O
can	O
require	O
less	O
energy	O
for	O
switching	O
,	O
can	O
have	O
lower	O
operating	O
voltage	O
,	O
feature	O
a	O
higher	O
integration	O
density	O
,	O
possess	O
non-volatility	O
which	O
allows	O
for	O
ultra	O
low	O
standby	O
power	O
consumption	O
,	O
and	O
the	O
energy	O
required	O
to	O
switch	O
MESO	O
devices	O
scales	O
down	O
cubically	O
with	O
every	O
miniaturization	O
by	O
a	O
factor	O
of	O
two	O
of	O
the	O
device	O
.	O
</s>
<s>
These	O
features	O
make	O
MESO	O
attractive	O
for	O
replacing	O
CMOS	B-Device
devices	O
in	O
the	O
design	O
of	O
future	O
logic	O
gates	O
and	O
circuits	O
in	O
integrated	O
circuits	O
as	O
it	O
can	O
help	O
increase	O
their	O
performance	O
and	O
lower	O
their	O
power	O
consumption	O
.	O
</s>
