<s>
Ion	B-Algorithm
beam	I-Algorithm
mixing	I-Algorithm
is	O
the	O
atomic	O
intermixing	O
and	O
alloying	O
that	O
can	O
occur	O
at	O
the	O
interface	O
separating	O
two	O
different	O
materials	O
during	O
ion	O
irradiation	O
.	O
</s>
<s>
The	O
process	O
involves	O
bombarding	O
layered	O
samples	O
with	O
doses	O
of	O
ion	O
radiation	O
in	O
order	O
to	O
promote	O
mixing	O
at	O
the	O
interface	O
,	O
and	O
generally	O
serves	O
as	O
a	O
means	O
of	O
preparing	O
electrical	O
junctions	O
,	O
especially	O
between	O
non-equilibrium	O
or	O
metastable	O
alloys	B-Application
and	O
intermetallic	O
compounds	O
.	O
</s>
<s>
Ion	O
implantation	O
equipment	O
can	O
be	O
used	O
to	O
achieve	O
ion	B-Algorithm
beam	I-Algorithm
mixing	I-Algorithm
.	O
</s>
<s>
The	O
unique	O
effects	O
that	O
stem	O
from	O
ion	B-Algorithm
beam	I-Algorithm
mixing	I-Algorithm
are	O
primarily	O
a	O
result	O
of	O
ballistic	B-Application
effects	O
;	O
that	O
is	O
,	O
impinging	O
ions	O
have	O
high	O
kinetic	O
energies	O
that	O
are	O
transferred	O
to	O
target	O
atoms	O
on	O
collision	O
.	O
</s>
<s>
During	O
this	O
ballistic	B-Application
process	O
,	O
energies	O
of	O
impinging	O
ions	O
displace	O
atoms	O
and	O
electrons	O
of	O
the	O
target	O
material	O
several	O
lattice	O
sites	O
away	O
,	O
resulting	O
in	O
relocations	O
there	O
and	O
interface	O
mixing	O
at	O
the	O
boundary	O
layer	O
.	O
</s>
<s>
If	O
energies	O
are	O
kept	O
sufficiently	O
high	O
in	O
these	O
nuclear	O
collisions	O
,	O
then	O
,	O
compared	O
to	O
traditional	O
high-dose	O
implantation	O
processes	O
,	O
ballistic	B-Application
ion	O
implantation	O
produces	O
higher	O
intrafilm	O
alloy	B-Application
concentrations	O
at	O
lower	O
doses	O
of	O
irradiation	O
compared	O
to	O
conventional	O
implantation	O
processes	O
.	O
</s>
<s>
At	O
temperatures	O
below	O
100°C	O
for	O
most	O
implanted	O
materials	O
,	O
ion	B-Algorithm
beam	I-Algorithm
mixing	I-Algorithm
is	O
essentially	O
independent	O
of	O
temperature	O
but	O
,	O
as	O
temperature	O
increases	O
beyond	O
that	O
point	O
,	O
mixing	O
rises	O
exponentially	O
with	O
temperature	O
.	O
</s>
<s>
Ballistic	B-Application
ion	B-Algorithm
beam	I-Algorithm
mixing	I-Algorithm
can	O
be	O
classified	O
into	O
two	O
basic	O
subtypes	O
,	O
recoil	O
mixing	O
and	O
cascade	O
mixing	O
,	O
which	O
take	O
place	O
simultaneously	O
as	O
a	O
result	O
of	O
ion	O
bombardment	O
.	O
</s>
<s>
Recoil	O
implantation	O
,	O
however	O
,	O
is	O
not	O
the	O
dominant	O
process	O
in	O
ion	B-Algorithm
beam	I-Algorithm
mixing	I-Algorithm
.	O
</s>
<s>
Advantages	O
of	O
ion	B-Algorithm
beam	I-Algorithm
mixing	I-Algorithm
as	O
a	O
means	O
of	O
synthesis	O
over	O
traditional	O
modes	O
of	O
implantation	O
include	O
the	O
process	O
 '	O
ability	O
to	O
produce	O
materials	O
with	O
high	O
solute	O
concentrations	O
using	O
lower	O
amounts	O
of	O
irradiation	O
,	O
and	O
better	O
control	O
of	O
band	O
gap	O
variation	O
and	O
diffusion	O
between	O
layers	O
.	O
</s>
<s>
The	O
cost	O
of	O
IM	O
is	O
also	O
less	O
prohibitive	O
than	O
that	O
of	O
other	O
modes	O
of	O
film	O
preparation	O
on	O
substrates	O
,	O
such	O
as	O
chemical	B-Algorithm
vapor	I-Algorithm
deposition	I-Algorithm
(	O
CVD	O
)	O
and	O
molecular	B-Algorithm
beam	I-Algorithm
epitaxy	I-Algorithm
(	O
MBE	O
)	O
.	O
</s>
