<s>
Ion-beam	O
lithography	O
offers	O
higher	O
resolution	O
patterning	O
than	O
UV	O
,	O
X-ray	O
,	O
or	O
electron	B-Architecture
beam	I-Architecture
lithography	I-Architecture
because	O
these	O
heavier	O
particles	O
have	O
more	O
momentum	O
.	O
</s>
<s>
There	O
is	O
also	O
a	O
reduced	O
potential	O
radiation	O
effect	O
to	O
sensitive	O
underlying	O
structures	O
compared	O
to	O
x-ray	O
and	O
e-beam	B-Architecture
lithography	I-Architecture
.	O
</s>
<s>
Ion-beam	O
lithography	O
,	O
or	O
ion-projection	O
lithography	O
,	O
is	O
similar	O
to	O
Electron	B-Architecture
beam	I-Architecture
lithography	I-Architecture
,	O
but	O
uses	O
much	O
heavier	O
charged	O
particles	O
,	O
ions	O
.	O
</s>
