<s>
Intel	B-Device
TeraHertz	I-Device
was	O
Intel	O
's	O
new	O
design	O
for	O
transistors	B-Application
.	O
</s>
<s>
Using	O
zirconium	O
dioxide	O
instead	O
of	O
silicon	O
dioxide	O
,	O
this	O
transistor	B-Application
can	O
reduce	O
the	O
current	O
leakage	O
,	O
and	O
thus	O
reduces	O
power	O
consumption	O
while	O
still	O
working	O
at	O
higher	O
speed	O
and	O
using	O
lower	O
voltages	O
.	O
</s>
<s>
One	O
element	O
of	O
this	O
structure	O
is	O
a	O
"	O
depleted	O
substrate	O
transistor	B-Application
,	O
"	O
which	O
is	O
a	O
type	O
of	O
CMOS	O
device	O
where	O
the	O
transistor	B-Application
is	O
built	O
in	O
an	O
ultra-thin	O
layer	O
of	O
silicon	O
on	O
top	O
of	O
an	O
embedded	O
layer	O
of	O
insulation	O
.	O
</s>
<s>
This	O
ultra-thin	O
silicon	O
layer	O
is	O
fully	O
depleted	O
to	O
maximize	O
drive	O
current	O
when	O
the	O
transistor	B-Application
is	O
turned	O
on	O
,	O
allowing	O
the	O
transistor	B-Application
to	O
switch	O
on	O
and	O
off	O
faster	O
.	O
</s>
<s>
In	O
contrast	O
,	O
when	O
the	O
transistor	B-Application
is	O
turned	O
off	O
,	O
unwanted	O
current	O
leakage	O
is	O
minimized	O
by	O
the	O
thin	O
insulating	O
layer	O
.	O
</s>
<s>
This	O
allows	O
the	O
depleted	O
substrate	O
transistor	B-Application
to	O
have	O
100	O
times	O
less	O
leakage	O
than	O
traditional	O
silicon-on-insulator	B-Algorithm
schemes	O
.	O
</s>
<s>
Another	O
innovation	O
of	O
Intel	O
's	O
depleted	O
substrate	O
transistor	B-Application
is	O
the	O
use	O
of	O
low	O
resistance	O
contacts	O
on	O
top	O
of	O
the	O
silicon	O
layer	O
.	O
</s>
<s>
The	O
transistor	B-Application
can	O
therefore	O
be	O
very	O
small	O
,	O
very	O
fast	O
and	O
consume	O
less	O
power	O
.	O
</s>
<s>
All	O
transistors	B-Application
have	O
a	O
"	O
gate-dielectric	O
,	O
"	O
a	O
material	O
that	O
separates	O
a	O
transistor	B-Application
's	O
"	O
gate	O
"	O
from	O
its	O
active	O
region	O
(	O
the	O
gate	O
controls	O
the	O
on-off	O
state	O
of	O
the	O
transistor	B-Application
)	O
.	O
</s>
<s>
Intel	B-Device
TeraHertz	I-Device
was	O
unveiled	O
in	O
2001	O
.	O
,	O
it	O
is	O
not	O
used	O
in	O
processors	O
.	O
</s>
