<s>
Indium	B-Algorithm
gallium	I-Algorithm
zinc	I-Algorithm
oxide	I-Algorithm
(	O
IGZO	B-Algorithm
)	O
is	O
a	O
semiconducting	O
material	O
,	O
consisting	O
of	O
indium	O
(	O
In	O
)	O
,	O
gallium	O
(	O
Ga	O
)	O
,	O
zinc	B-Application
(	O
Zn	O
)	O
and	O
oxygen	O
(	O
O	O
)	O
.	O
</s>
<s>
IGZO	B-Algorithm
thin-film	O
transistors	B-Application
(	O
TFT	O
)	O
are	O
used	O
in	O
the	O
TFT	O
backplane	B-Architecture
of	O
flat-panel	B-General_Concept
displays	I-General_Concept
(	O
FPDs	O
)	O
.	O
</s>
<s>
IGZO-TFT	O
was	O
developed	O
by	O
Hideo	O
Hosono	O
's	O
group	O
at	O
Tokyo	O
Institute	O
of	O
Technology	O
and	O
Japan	O
Science	O
and	O
Technology	O
Agency	O
(	O
JST	O
)	O
in	O
2003	O
(	O
crystalline	O
IGZO-TFT	O
)	O
and	O
in	O
2004	O
(	O
amorphous	O
IGZO-TFT	O
)	O
.	O
</s>
<s>
IGZO-TFT	O
has	O
20	O
–	O
50	O
times	O
the	O
electron	O
mobility	O
of	O
amorphous	O
silicon	O
,	O
which	O
has	O
often	O
been	O
used	O
in	O
liquid-crystal	B-Device
displays	I-Device
(	O
LCDs	B-Device
)	O
and	O
e-papers	O
.	O
</s>
<s>
As	O
a	O
result	O
,	O
IGZO-TFT	O
can	O
improve	O
the	O
speed	O
,	O
resolution	O
and	O
size	O
of	O
flat-panel	B-General_Concept
displays	I-General_Concept
.	O
</s>
<s>
It	O
is	O
currently	O
used	O
as	O
the	O
thin-film	O
transistors	B-Application
for	O
use	O
in	O
organic	B-Device
light-emitting	I-Device
diode	I-Device
(	O
OLED	B-Device
)	O
TV	O
displays	O
.	O
</s>
<s>
IGZO-TFT	O
and	O
its	O
applications	O
are	O
patented	O
by	O
JST	O
.	O
</s>
<s>
In	O
2012	O
,	O
Sharp	O
was	O
first	O
to	O
start	O
production	O
of	O
LCD	B-Device
panels	I-Device
incorporating	O
IGZO-TFT	O
.	O
</s>
<s>
Sharp	O
uses	O
IGZO-TFT	O
for	O
smartphones	B-Application
,	O
tablets	B-Device
,	O
and	O
32	O
"	O
LCDs	B-Device
.	O
</s>
<s>
In	O
these	O
,	O
the	O
aperture	O
ratio	O
of	O
the	O
LCD	B-Device
is	O
improved	O
by	O
up	O
to	O
20%	O
.	O
</s>
<s>
Power	O
consumption	O
is	O
improved	O
by	O
LCD	B-Device
idling	O
stop	O
technology	O
,	O
which	O
is	O
possible	O
due	O
to	O
the	O
high	O
mobility	O
and	O
low	O
off	O
current	O
of	O
IGZO-TFT	O
.	O
</s>
<s>
Sharp	O
has	O
started	O
to	O
release	O
high	O
pixel-density	O
panels	O
for	O
notebook	B-Device
applications	O
.	O
</s>
<s>
IGZO-TFT	O
is	O
also	O
employed	O
in	O
the	O
14	O
"	O
3,200	O
x	O
1,800	O
LCD	B-Device
of	O
an	O
ultrabook	B-Device
PC	O
supplied	O
by	O
Fujitsu	O
,	O
also	O
used	O
in	O
the	O
Razer	O
Blade	O
14	O
"	O
(	O
Touchscreen	O
Variant	O
)	O
Gaming	O
Laptop	B-Device
and	O
a	O
55	O
"	O
OLED	B-Device
TV	I-Device
supplied	O
by	O
LG	O
Electronics	O
.	O
</s>
<s>
IGZO	B-Algorithm
's	O
advantage	O
over	O
zinc	B-Application
oxide	O
is	O
that	O
it	O
can	O
be	O
deposited	O
as	O
a	O
uniform	O
amorphous	O
phase	O
while	O
retaining	O
the	O
high	O
carrier	O
mobility	O
common	O
to	O
oxide	O
semiconductors	O
.	O
</s>
<s>
The	O
transistors	B-Application
are	O
slightly	O
photo-sensitive	O
,	O
but	O
the	O
effect	O
becomes	O
significant	O
only	O
in	O
the	O
deep	O
violet	O
to	O
ultra-violet	O
(	O
photon	O
energy	O
above	O
3	O
eV	O
)	O
range	O
,	O
offering	O
the	O
possibility	O
of	O
a	O
fully	O
transparent	O
transistor	B-Application
.	O
</s>
<s>
The	O
current	O
impediment	O
to	O
large-scale	O
IGZO	B-Algorithm
manufacturing	O
is	O
the	O
synthesis	O
method	O
.	O
</s>
<s>
IGZO	B-Algorithm
can	O
be	O
deposited	O
onto	O
substrates	O
such	O
as	O
quartz	O
,	O
single-crystal	O
silicon	O
,	O
or	O
even	O
plastic	O
due	O
to	O
its	O
ability	O
for	O
low-temperature	O
deposition	O
.	O
</s>
