<s>
The	O
main	O
difference	O
of	O
the	O
HEBT	O
from	O
the	O
Heterojunction	B-Algorithm
bipolar	I-Algorithm
transistor	I-Algorithm
(	O
HBT	O
)	O
is	O
that	O
the	O
emitter	O
–	O
base	O
interface	O
is	O
the	O
same	O
as	O
in	O
a	O
bipolar	O
junction	O
transistor	O
(	O
BJT	O
)	O
with	O
the	O
blocking	O
energy	O
gap	O
being	O
moved	O
back	O
into	O
the	O
emitter	O
bulk	O
region	O
.	O
</s>
<s>
The	O
main	O
advantage	O
of	O
HEBT	O
architecture	O
,	O
compared	O
to	O
the	O
HBT	O
is	O
a	O
simplified	O
fabrication	B-Architecture
process	I-Architecture
for	O
the	O
emitter	O
–	O
base	O
junction	O
.	O
</s>
<s>
This	O
is	O
very	O
important	O
as	O
it	O
is	O
evident	O
from	O
scanning	O
ion	O
mass	O
spectrometry	O
data	O
that	O
out-diffusion	O
base	O
dopant	O
into	O
the	O
emitter	O
junction	O
is	O
difficult	O
to	O
control	O
,	O
as	O
the	O
base	O
is	O
,	O
in	O
general	O
,	O
very	O
highly	O
doped	B-Algorithm
in	O
order	O
to	O
enhance	O
performance	O
.	O
</s>
<s>
The	O
HEBT	O
is	O
well	O
positioned	O
as	O
a	O
potential	O
candidate	O
for	O
key	O
roles	O
in	O
high-frequency	O
optoelectronic	O
markets	O
,	O
similar	O
to	O
the	O
Heterojunction	B-Algorithm
bipolar	I-Algorithm
transistor	I-Algorithm
.	O
</s>
