<s>
The	O
gate	B-Algorithm
oxide	I-Algorithm
is	O
the	O
dielectric	O
layer	O
that	O
separates	O
the	O
gate	B-Algorithm
terminal	O
of	O
a	O
MOSFET	B-Architecture
(	O
metal	B-Architecture
–	I-Architecture
oxide	I-Architecture
–	I-Architecture
semiconductor	I-Architecture
field-effect	I-Architecture
transistor	I-Architecture
)	O
from	O
the	O
underlying	O
source	O
and	O
drain	O
terminals	O
as	O
well	O
as	O
the	O
conductive	O
channel	O
that	O
connects	O
source	O
and	O
drain	O
when	O
the	O
transistor	O
is	O
turned	O
on	O
.	O
</s>
<s>
Gate	B-Algorithm
oxide	I-Algorithm
is	O
formed	O
by	O
thermal	B-Algorithm
oxidation	I-Algorithm
of	O
the	O
silicon	O
of	O
the	O
channel	O
to	O
form	O
a	O
thin	O
(	O
5	O
-	O
200	O
nm	O
)	O
insulating	O
layer	O
of	O
silicon	O
dioxide	O
.	O
</s>
<s>
The	O
insulating	O
silicon	O
dioxide	O
layer	O
is	O
formed	O
through	O
a	O
process	O
of	O
self-limiting	O
oxidation	O
,	O
which	O
is	O
described	O
by	O
the	O
Deal	B-Algorithm
–	I-Algorithm
Grove	I-Algorithm
model	I-Algorithm
.	O
</s>
<s>
A	O
conductive	O
gate	B-Algorithm
material	O
is	O
subsequently	O
deposited	O
over	O
the	O
gate	B-Algorithm
oxide	I-Algorithm
to	O
form	O
the	O
transistor	O
.	O
</s>
<s>
The	O
gate	B-Algorithm
oxide	I-Algorithm
serves	O
as	O
the	O
dielectric	O
layer	O
so	O
that	O
the	O
gate	B-Algorithm
can	O
sustain	O
as	O
high	O
as	O
1	O
to	O
5	O
MV/cm	O
transverse	O
electric	O
field	O
in	O
order	O
to	O
strongly	O
modulate	O
the	O
conductance	O
of	O
the	O
channel	O
.	O
</s>
<s>
Above	O
the	O
gate	B-Algorithm
oxide	I-Algorithm
is	O
a	O
thin	O
electrode	O
layer	O
made	O
of	O
a	O
conductor	O
which	O
can	O
be	O
aluminium	O
,	O
a	O
highly	O
doped	O
silicon	O
,	O
a	O
refractory	O
metal	O
such	O
as	O
tungsten	B-Application
,	O
a	O
silicide	O
(	O
TiSi	O
,	O
MoSi2	O
,	O
TaSi	O
or	O
WSi2	O
)	O
or	O
a	O
sandwich	O
of	O
these	O
layers	O
.	O
</s>
<s>
This	O
gate	B-Algorithm
electrode	O
is	O
often	O
called	O
"	O
gate	B-Algorithm
metal	O
"	O
or	O
"	O
gate	B-Algorithm
conductor	O
"	O
.	O
</s>
<s>
The	O
geometrical	O
width	O
of	O
the	O
gate	B-Algorithm
conductor	O
electrode	O
(	O
the	O
direction	O
transverse	O
to	O
current	O
flow	O
)	O
is	O
called	O
the	O
physical	O
gate	B-Algorithm
width	O
.	O
</s>
<s>
The	O
physical	O
gate	B-Algorithm
width	O
may	O
be	O
slightly	O
different	O
from	O
the	O
electrical	O
channel	O
width	O
used	O
to	O
model	O
the	O
transistor	O
as	O
fringing	O
electric	O
fields	O
can	O
exert	O
an	O
influence	O
on	O
conductors	O
that	O
are	O
not	O
immediately	O
below	O
the	O
gate	B-Algorithm
.	O
</s>
<s>
The	O
electrical	O
properties	O
of	O
the	O
gate	B-Algorithm
oxide	I-Algorithm
are	O
critical	O
to	O
the	O
formation	O
of	O
the	O
conductive	O
channel	O
region	O
below	O
the	O
gate	B-Algorithm
.	O
</s>
<s>
In	O
NMOS-type	O
devices	O
,	O
the	O
zone	O
beneath	O
the	O
gate	B-Algorithm
oxide	I-Algorithm
is	O
a	O
thin	O
n-type	O
inversion	O
layer	O
on	O
the	O
surface	O
of	O
the	O
p-type	O
semiconductor	O
substrate	O
.	O
</s>
<s>
It	O
is	O
induced	O
by	O
the	O
oxide	O
electric	O
field	O
from	O
the	O
applied	O
gate	B-Algorithm
voltage	O
VG	O
.	O
</s>
<s>
Overstressing	O
the	O
gate	B-Algorithm
oxide	I-Algorithm
layer	O
,	O
a	O
common	O
failure	O
mode	O
of	O
MOS	O
devices	O
,	O
may	O
lead	O
to	O
gate	B-Algorithm
rupture	O
or	O
to	O
stress	O
induced	O
leakage	O
current	O
.	O
</s>
<s>
During	O
manufacturing	O
by	O
reactive-ion-etching	B-Algorithm
the	O
gate	B-Algorithm
oxide	I-Algorithm
may	O
damaged	O
by	O
antenna	O
effect	O
.	O
</s>
<s>
The	O
first	O
MOSFET	B-Architecture
(	O
metal	B-Architecture
–	I-Architecture
oxide	I-Architecture
–	I-Architecture
semiconductor	I-Architecture
field-effect	I-Architecture
transistor	I-Architecture
,	O
or	O
MOS	B-Architecture
transistor	I-Architecture
)	O
was	O
invented	O
by	O
Egyptian	O
engineer	O
Mohamed	O
Atalla	O
and	O
Korean	O
engineer	O
Dawon	O
Kahng	O
at	O
Bell	O
Labs	O
in	O
1959	O
.	O
</s>
<s>
In	O
1960	O
,	O
Atalla	O
and	O
Kahng	O
fabricated	B-Architecture
the	O
first	O
MOSFET	B-Architecture
with	O
a	O
gate	B-Algorithm
oxide	I-Algorithm
thickness	O
of	O
100	O
nm	O
,	O
along	O
with	O
a	O
gate	B-Algorithm
length	O
of	O
20µm	O
.	O
</s>
<s>
In	O
1987	O
,	O
Bijan	O
Davari	O
led	O
an	O
IBM	O
research	O
team	O
that	O
demonstrated	O
the	O
first	O
MOSFET	B-Architecture
with	O
a	O
10	O
nm	O
gate	B-Algorithm
oxide	I-Algorithm
thickness	O
,	O
using	O
tungsten-gate	O
technology	O
.	O
</s>
