<s>
Gas	B-Algorithm
immersion	I-Algorithm
laser	I-Algorithm
doping	I-Algorithm
(	O
GILD	O
)	O
is	O
a	O
method	O
of	O
doping	B-Algorithm
a	O
semiconductor	O
material	O
such	O
as	O
silicon	O
.	O
</s>
<s>
In	O
the	O
case	O
of	O
doping	B-Algorithm
silicon	O
with	O
boron	O
to	O
create	O
a	O
P-type	O
semiconductor	O
material	O
,	O
a	O
thin	O
wafer	B-Architecture
of	O
silicon	O
is	O
placed	O
in	O
a	O
containment	O
chamber	O
and	O
is	O
immersed	O
in	O
boron	O
gas	O
.	O
</s>
<s>
A	O
pulsed	O
laser	O
is	O
directed	O
at	O
the	O
silicon	B-Architecture
wafer	I-Architecture
and	O
this	O
results	O
in	O
localised	O
melting	O
and	O
subsequent	O
recrystallisation	O
of	O
the	O
silicon	B-Architecture
wafer	I-Architecture
material	O
,	O
allowing	O
boron	O
atoms	O
in	O
the	O
gas	O
to	O
diffuse	O
into	O
the	O
molten	O
sections	O
of	O
the	O
silicon	B-Architecture
wafer	I-Architecture
.	O
</s>
<s>
The	O
result	O
of	O
this	O
process	O
is	O
a	O
silicon	B-Architecture
wafer	I-Architecture
with	O
boron	O
impurities	O
,	O
creating	O
a	O
P-type	O
semiconductor	O
.	O
</s>
