<s>
Furnace	O
annealing	O
is	O
a	O
process	O
used	O
in	O
semiconductor	B-Architecture
device	I-Architecture
fabrication	I-Architecture
which	O
consist	O
of	O
heating	O
multiple	O
semiconductor	B-Architecture
wafers	I-Architecture
in	O
order	O
to	O
affect	O
their	O
electrical	O
properties	O
.	O
</s>
<s>
Wafers	B-Architecture
can	O
be	O
heated	O
in	O
order	O
to	O
activate	O
dopants	O
,	O
change	O
film	O
to	O
film	O
or	O
film	O
to	O
wafer	B-Architecture
substrate	B-Architecture
interfaces	O
,	O
densify	O
deposited	O
films	O
,	O
change	O
states	O
of	O
grown	O
films	O
,	O
repair	O
damage	O
from	O
implants	O
,	O
move	O
dopants	O
or	O
drive	O
dopants	O
from	O
one	O
film	O
into	O
another	O
or	O
from	O
a	O
film	O
into	O
the	O
wafer	B-Architecture
substrate	B-Architecture
.	O
</s>
<s>
During	O
ion	O
implantation	O
process	O
,	O
the	O
crystal	O
substrate	B-Architecture
is	O
damaged	O
due	O
to	O
bombardment	O
with	O
high	O
energy	O
ions	O
.	O
</s>
<s>
Furnace	B-Algorithm
anneals	I-Algorithm
may	O
be	O
integrated	O
into	O
other	O
furnace	O
processing	O
steps	O
,	O
such	O
as	O
oxidations	O
,	O
or	O
may	O
be	O
processed	O
on	O
their	O
own	O
.	O
</s>
<s>
Furnace	B-Algorithm
anneals	I-Algorithm
are	O
performed	O
by	O
equipment	O
especially	O
built	O
to	O
heat	O
semiconductor	B-Architecture
wafers	I-Architecture
.	O
</s>
<s>
Furnaces	O
are	O
capable	O
of	O
processing	O
many	O
wafers	B-Architecture
at	O
a	O
time	O
but	O
each	O
process	O
can	O
last	O
between	O
several	O
hours	O
and	O
a	O
day	O
.	O
</s>
<s>
Increasingly	O
,	O
furnace	B-Algorithm
anneals	I-Algorithm
are	O
being	O
supplanted	O
by	O
Rapid	O
Thermal	O
Anneal	O
(	O
RTA	O
)	O
or	O
Rapid	B-Algorithm
Thermal	I-Algorithm
Processing	I-Algorithm
(	O
RTP	O
)	O
.	O
</s>
<s>
RTP	O
or	O
RTA	O
fixes	O
this	O
by	O
having	O
thermal	O
cycles	O
for	O
each	O
wafer	B-Architecture
that	O
is	O
of	O
the	O
order	O
of	O
minutes	O
rather	O
than	O
hours	O
for	O
furnace	B-Algorithm
anneals	I-Algorithm
.	O
</s>
