<s>
Fast	B-Device
Cycle	I-Device
DRAM	I-Device
(	O
FCRAM	B-Device
)	O
is	O
a	O
type	O
of	O
synchronous	O
dynamic	O
random-access	O
memory	O
developed	O
by	O
Fujitsu	O
and	O
Toshiba	O
.	O
</s>
<s>
FCRAM	B-Device
has	O
a	O
shorter	O
data	O
access	O
latency	O
compared	O
to	O
contemporary	O
commodity	O
SDRAMs	O
;	O
and	O
is	O
used	O
in	O
where	O
the	O
lower	O
data	O
access	O
latency	O
is	O
more	O
desirable	O
than	O
low	O
cost	O
and	O
high	O
capacity	O
(	O
FCRAM	B-Device
is	O
a	O
moderate	O
cost	O
and	O
capacity	O
speciality	O
DRAM	O
)	O
.	O
</s>
<s>
FCRAM	B-Device
achieves	O
its	O
low	O
latency	O
by	O
dividing	O
each	O
row	O
into	O
multiple	O
sub-rows	O
,	O
of	O
which	O
only	O
one	O
is	O
activated	O
during	O
a	O
row-activation	O
operation	O
.	O
</s>
<s>
FCRAM	B-Device
has	O
a	O
DDR	O
SDRAM-like	O
command	O
set	O
to	O
enable	O
memory	O
controllers	O
that	O
support	O
both	O
DDR	O
SDRAM	O
and	O
FCRAM	B-Device
.	O
</s>
<s>
It	O
also	O
has	O
a	O
standard	O
dual	B-General_Concept
in-line	I-General_Concept
memory	I-General_Concept
module	I-General_Concept
(	O
DIMM	B-General_Concept
)	O
.	O
</s>
