<s>
Capacitance	B-Algorithm
–	I-Algorithm
voltage	I-Algorithm
profiling	I-Algorithm
(	O
or	O
C	O
–	O
V	O
profiling	O
,	O
sometimes	O
CV	B-Algorithm
profiling	I-Algorithm
)	O
is	O
a	O
technique	O
for	O
characterizing	O
semiconductor	O
materials	O
and	O
devices	O
.	O
</s>
<s>
The	O
technique	O
uses	O
a	O
metal	O
–	O
semiconductor	O
junction	O
(	O
Schottky	O
barrier	O
)	O
or	O
a	O
p	O
–	O
n	O
junction	O
or	O
a	O
MOSFET	B-Architecture
to	O
create	O
a	O
depletion	B-Algorithm
region	I-Algorithm
,	O
a	O
region	O
which	O
is	O
empty	O
of	O
conducting	O
electrons	O
and	O
holes	O
,	O
but	O
may	O
contain	O
ionized	O
donors	O
and	O
electrically	O
active	O
defects	O
or	O
traps	O
.	O
</s>
<s>
The	O
depletion	B-Algorithm
region	I-Algorithm
with	O
its	O
ionized	O
charges	O
inside	O
behaves	O
like	O
a	O
capacitor	O
.	O
</s>
<s>
Many	O
researchers	O
use	O
capacitance	O
–	O
voltage	O
(	O
C	O
–	O
V	O
)	O
testing	O
to	O
determine	O
semiconductor	O
parameters	O
,	O
particularly	O
in	O
MOSCAP	O
and	O
MOSFET	B-Architecture
structures	O
.	O
</s>
<s>
A	O
C	O
–	O
V	O
profile	O
as	O
generated	O
on	O
nanoHUB	O
for	O
bulk	O
MOSFET	B-Architecture
with	O
different	O
oxide	O
thicknesses	O
.	O
</s>
<s>
A	O
metal	B-Architecture
–	I-Architecture
oxide	I-Architecture
–	I-Architecture
semiconductor	I-Architecture
structure	O
is	O
critical	O
part	O
of	O
a	O
MOSFET	B-Architecture
,	O
controlling	O
the	O
height	O
of	O
potential	O
barrier	O
in	O
the	O
channel	O
via	O
the	O
gate	O
oxide	O
.	O
</s>
<s>
An	O
n-channel	O
MOSFET	B-Architecture
's	O
operation	O
can	O
be	O
divided	O
into	O
three	O
regions	O
,	O
shown	O
below	O
and	O
corresponding	O
to	O
the	O
right	O
figure	O
.	O
</s>
