<s>
Bipolar	O
CMOS	B-Device
(	O
BiCMOS	B-General_Concept
)	O
is	O
a	O
semiconductor	O
technology	O
that	O
integrates	O
two	O
semiconductor	O
technologies	O
,	O
those	O
of	O
the	O
bipolar	O
junction	O
transistor	B-Application
and	O
the	O
CMOS	B-Device
(	O
complementary	O
metal	B-Architecture
–	I-Architecture
oxide	I-Architecture
–	I-Architecture
semiconductor	I-Architecture
)	O
logic	O
gate	O
,	O
into	O
a	O
single	O
integrated	O
circuit	O
.	O
</s>
<s>
Bipolar	O
transistors	B-Application
offer	O
high	O
speed	O
,	O
high	O
gain	O
,	O
and	O
low	O
output	O
impedance	O
with	O
relatively	O
high	O
power	O
consumption	O
per	O
device	O
,	O
which	O
are	O
excellent	O
properties	O
for	O
high-frequency	O
analog	O
amplifiers	O
including	O
low	O
noise	O
radio	O
frequency	O
(	O
RF	O
)	O
amplifiers	O
that	O
only	O
use	O
a	O
few	O
active	O
devices	O
,	O
while	O
CMOS	B-Device
technology	O
offers	O
high	O
input	O
impedance	O
and	O
is	O
excellent	O
for	O
constructing	O
large	O
numbers	O
of	O
low-power	O
logic	O
gates	O
.	O
</s>
<s>
In	O
a	O
BiCMOS	B-General_Concept
process	O
the	O
doping	B-Algorithm
profile	O
and	O
other	O
process	O
features	O
may	O
be	O
tilted	O
to	O
favour	O
either	O
the	O
CMOS	B-Device
or	O
the	O
bipolar	O
devices	O
.	O
</s>
<s>
For	O
example	O
GlobalFoundries	O
offer	O
a	O
basic	O
180nm	O
BiCMOS7WL	O
process	O
and	O
several	O
other	O
BiCMOS	B-General_Concept
processes	O
optimized	O
in	O
various	O
ways	O
.	O
</s>
<s>
These	O
processes	O
also	O
include	O
steps	O
for	O
the	O
deposition	O
of	O
precision	O
resistors	O
,	O
and	O
high	O
Q	O
RF	O
inductors	O
and	O
capacitors	O
on-chip	O
,	O
which	O
are	O
not	O
needed	O
in	O
a	O
"	O
pure	O
"	O
CMOS	B-Device
logic	O
design	O
.	O
</s>
<s>
BiCMOS	B-General_Concept
is	O
aimed	O
at	O
mixed-signal	O
ICs	O
,	O
such	O
as	O
ADCs	O
and	O
complete	O
software	B-Architecture
radio	I-Architecture
systems	B-Architecture
on	I-Architecture
a	I-Architecture
chip	I-Architecture
that	O
need	O
amplifiers	O
,	O
analog	O
power	O
management	O
circuits	O
,	O
and	O
logic	O
gates	O
on	O
chip	O
.	O
</s>
<s>
BiCMOS	B-General_Concept
has	O
some	O
advantages	O
in	O
providing	O
digital	O
interfaces	O
.	O
</s>
<s>
BiCMOS	B-General_Concept
circuits	O
use	O
the	O
characteristics	O
of	O
each	O
type	O
of	O
transistor	B-Application
most	O
appropriately	O
.	O
</s>
<s>
Generally	O
this	O
means	O
that	O
high	O
current	O
circuits	O
such	O
as	O
on	O
chip	O
power	O
regulators	O
use	O
metal	B-Architecture
–	I-Architecture
oxide	I-Architecture
–	I-Architecture
semiconductor	I-Architecture
field-effect	I-Architecture
transistors	I-Architecture
(	O
MOSFETs	B-Architecture
)	O
for	O
efficient	O
control	O
,	O
and	O
'	O
sea	O
of	O
logic	O
 '	O
use	O
conventional	O
CMOS	B-Device
structures	O
,	O
while	O
those	O
portions	O
of	O
specialized	O
very	O
high	O
performance	O
circuits	O
such	O
as	O
ECL	B-General_Concept
dividers	O
and	O
LNAs	O
use	O
bipolar	O
devices	O
.	O
</s>
<s>
The	O
Pentium	B-General_Concept
,	O
Pentium	B-Device
Pro	I-Device
,	O
and	O
SuperSPARC	B-Device
microprocessors	B-Architecture
also	O
use	O
BiCMOS	B-General_Concept
.	O
</s>
<s>
Some	O
of	O
the	O
advantages	O
of	O
CMOS	B-Device
fabrication	B-Architecture
,	O
for	O
example	O
very	O
low	O
cost	O
in	O
mass	O
production	O
,	O
do	O
not	O
transfer	O
directly	O
to	O
BiCMOS	B-General_Concept
fabrication	B-Architecture
.	O
</s>
<s>
An	O
inherent	O
difficulty	O
arises	O
from	O
the	O
fact	O
that	O
optimizing	O
both	O
the	O
BJT	O
and	O
MOS	O
components	O
of	O
the	O
process	O
is	O
impossible	O
without	O
adding	O
many	O
extra	O
fabrication	B-Architecture
steps	O
and	O
consequently	O
increased	O
process	O
cost	O
and	O
reduced	O
yield	O
.	O
</s>
<s>
Finally	O
,	O
in	O
the	O
area	O
of	O
high	O
performance	O
logic	O
,	O
BiCMOS	B-General_Concept
may	O
never	O
offer	O
as	O
low	O
a	O
power	O
consumption	O
as	O
a	O
foundry	O
process	O
optimized	O
for	O
CMOS	B-Device
alone	O
,	O
due	O
to	O
the	O
potential	O
for	O
higher	O
standby	O
leakage	O
current	O
.	O
</s>
<s>
In	O
July	O
1968	O
,	O
Hung-Chang	O
Lin	O
and	O
Ramachandra	O
R	O
.	O
Iyer	O
demonstrated	O
an	O
integrated	O
bipolar-MOS	O
(	O
BiMOS	B-General_Concept
)	O
audio	O
amplifier	O
,	O
combining	O
bipolar	O
junction	O
transistor	B-Application
(	O
BJT	O
)	O
and	O
metal	B-Architecture
–	I-Architecture
oxide	I-Architecture
–	I-Architecture
semiconductor	I-Architecture
(	O
MOS	O
)	O
technologies	O
,	O
at	O
Westinghouse	O
Electric	O
Corporation	O
.	O
</s>
<s>
Ho	O
,	O
the	O
first	O
BiCMOS	B-General_Concept
integrated	O
circuit	O
,	O
combining	O
BJT	O
and	O
complementary	O
MOS	O
(	O
CMOS	B-Device
)	O
technologies	O
on	O
a	O
single	O
integrated	O
circuit	O
,	O
at	O
Westinghouse	O
in	O
October	O
1968	O
.	O
</s>
<s>
In	O
1984	O
,	O
BiCMOS	B-General_Concept
large-scale	O
integration	O
(	O
LSI	O
)	O
was	O
demonstrated	O
by	O
a	O
Hitachi	O
research	O
team	O
led	O
by	O
H	O
.	O
Higuchi	O
,	O
Goro	O
Kitsukawa	O
and	O
Takahide	O
Ikeda	O
.	O
</s>
<s>
In	O
the	O
1990s	O
,	O
modern	O
integrated	B-Architecture
circuit	I-Architecture
fabrication	I-Architecture
technologies	O
began	O
to	O
make	O
commercial	O
BiCMOS	B-General_Concept
technology	O
a	O
reality	O
.	O
</s>
<s>
A	O
type	O
of	O
BiCMOS	B-General_Concept
technology	O
is	O
bipolar-CMOS-DMOS	O
(	O
BCD	O
)	O
technology	O
,	O
which	O
combines	O
BiCMOS	B-General_Concept
with	O
DMOS	O
(	O
double-diffused	O
MOS	O
)	O
,	O
a	O
type	O
of	O
power	O
MOSFET	B-Architecture
technology	O
.	O
</s>
<s>
BCD	O
technology	O
combines	O
three	O
semiconductor	B-Architecture
device	I-Architecture
fabrication	I-Architecture
processes	O
on	O
a	O
power	O
IC	O
(	O
power	O
integrated	O
circuit	O
)	O
chip	O
:	O
bipolar	O
for	O
precise	O
analog	O
functions	O
,	O
CMOS	B-Device
for	O
digital	O
design	O
,	O
and	O
DMOS	O
for	O
power	O
electronic	O
and	O
high-voltage	O
elements	O
.	O
</s>
<s>
They	O
have	O
a	O
wide	O
range	O
of	O
applications	O
,	O
such	O
as	O
silicon-on-insulator	B-Algorithm
(	O
SOI	O
)	O
BCD	O
being	O
used	O
for	O
medical	O
electronics	O
,	O
automotive	O
safety	O
and	O
audio	O
technology	O
.	O
</s>
