<s>
Ballistic	B-Algorithm
deflection	I-Algorithm
transistors	I-Algorithm
(	O
BDTs	O
)	O
are	O
electronic	O
devices	O
,	O
developed	O
since	O
2006	O
,	O
for	O
high-speed	O
integrated	O
circuits	O
,	O
which	O
is	O
a	O
set	O
of	O
circuits	O
bounded	O
on	O
semiconductor	O
material	O
.	O
</s>
<s>
A	O
ballistic	B-Algorithm
deflection	I-Algorithm
transistor	I-Algorithm
would	O
be	O
significant	O
in	O
acting	O
as	O
both	O
a	O
linear	O
amplifier	O
and	O
a	O
switch	O
for	O
current	O
flow	O
on	O
electronic	O
devices	O
,	O
which	O
could	O
be	O
used	O
to	O
maintain	O
digital	O
logic	O
and	O
memory	O
.	O
</s>
<s>
One	O
advantage	O
of	O
the	O
ballistic	B-Algorithm
deflection	I-Algorithm
transistor	I-Algorithm
is	O
that	O
because	O
such	O
device	O
will	O
use	O
very	O
little	O
power	O
(	O
implementing	O
adiabatic	O
circuit	O
)	O
,	O
it	O
will	O
produce	O
less	O
heat	O
,	O
and	O
therefore	O
be	O
able	O
to	O
operate	O
faster	O
or	O
with	O
higher	O
duty	O
cycle	O
.	O
</s>
<s>
Along	O
with	O
an	O
increased	O
speed	O
,	O
another	O
advantage	O
of	O
the	O
ballistic	B-Algorithm
deflection	I-Algorithm
transistor	I-Algorithm
is	O
that	O
it	O
will	O
be	O
usable	O
in	O
both	O
aspects	O
of	O
linear	O
amplifier	O
and	O
switch	O
.	O
</s>
<s>
Additionally	O
,	O
the	O
ballistic	B-Algorithm
deflection	I-Algorithm
transistors	I-Algorithm
are	O
intrinsically	O
small	O
,	O
because	O
only	O
small	O
size	O
allows	O
to	O
reduce	O
the	O
role	O
of	O
mechanisms	O
responsible	O
for	O
inelastic	O
scattering	O
of	O
electrons	O
,	O
normally	O
dominating	O
larger	O
devices	O
.	O
</s>
<s>
The	O
ballistic	B-Algorithm
deflection	I-Algorithm
transistor	I-Algorithm
comprise	O
the	O
recent	O
(	O
in	O
2006	O
)	O
design	O
been	O
created	O
by	O
the	O
Cornell	O
Nanofabrication	O
Facility	O
,	O
using	O
a	O
two-dimensional	O
electron	O
gas	O
as	O
the	O
conducting	O
medium	O
.	O
</s>
