<s>
The	O
65	B-Algorithm
nm	I-Algorithm
process	I-Algorithm
is	O
an	O
advanced	O
lithographic	B-Algorithm
node	O
used	O
in	O
volume	O
CMOS	B-Device
(	O
MOSFET	B-Architecture
)	O
semiconductor	B-Architecture
fabrication	I-Architecture
.	O
</s>
<s>
transistor	B-Architecture
gate	I-Architecture
lengths	O
)	O
can	O
reach	O
as	O
low	O
as	O
25nm	O
on	O
a	O
nominally	O
65nm	B-Algorithm
process	I-Algorithm
,	O
while	O
the	O
pitch	O
between	O
two	O
lines	O
may	O
be	O
greater	O
than	O
130nm	O
.	O
</s>
<s>
For	O
comparison	B-Algorithm
,	O
cellular	O
ribosomes	O
are	O
about	O
20nm	O
end-to-end	O
.	O
</s>
<s>
By	O
September	O
2007	O
,	O
Intel	O
,	O
AMD	O
,	O
IBM	O
,	O
UMC	O
and	O
Chartered	O
were	O
also	O
producing	O
65nm	B-Algorithm
chips	O
.	O
</s>
<s>
While	O
feature	O
sizes	O
may	O
be	O
drawn	O
as	O
65nm	B-Algorithm
or	O
less	O
,	O
the	O
wavelengths	O
of	O
light	O
used	O
for	O
lithography	B-Algorithm
are	O
193nm	O
and	O
248nm	O
.	O
</s>
<s>
Fabrication	B-Architecture
of	O
sub-wavelength	O
features	O
requires	O
special	O
imaging	O
technologies	O
,	O
such	O
as	O
optical	B-Algorithm
proximity	I-Algorithm
correction	I-Algorithm
and	O
phase-shifting	B-Algorithm
masks	I-Algorithm
.	O
</s>
<s>
The	O
new	O
chemistry	O
of	O
high-κ	B-Algorithm
gate	O
dielectrics	O
must	O
be	O
combined	O
with	O
existing	O
techniques	O
,	O
including	O
substrate	O
bias	O
and	O
multiple	O
threshold	O
voltages	O
,	O
to	O
prevent	O
leakage	O
from	O
prohibitively	O
consuming	O
power	O
.	O
</s>
<s>
IEDM	O
papers	O
from	O
Intel	O
in	O
2002	O
,	O
2004	O
,	O
and	O
2005	O
illustrate	O
the	O
industry	O
trend	O
that	O
the	O
transistor	O
sizes	O
can	O
no	O
longer	O
scale	O
along	O
with	O
the	O
rest	O
of	O
the	O
feature	O
dimensions	O
(	O
gate	O
width	O
only	O
changed	O
from	O
220nm	O
to	O
210nm	O
going	O
from	O
90nm	O
to	O
65nm	B-Algorithm
technologies	O
)	O
.	O
</s>
