<s>
In	O
semiconductor	B-Architecture
manufacturing	I-Architecture
,	O
the	O
2	O
nm	O
process	O
is	O
the	O
next	O
MOSFET	B-Architecture
(	O
metal	B-Architecture
–	I-Architecture
oxide	I-Architecture
–	I-Architecture
semiconductor	I-Architecture
field-effect	I-Architecture
transistor	I-Architecture
)	O
die	O
shrink	O
after	O
the	O
3	O
nm	O
process	O
node	O
.	O
</s>
<s>
As	O
of	O
May	O
2022	O
,	O
TSMC	O
plans	O
to	O
begin	O
risk	O
2nm	B-Algorithm
production	O
at	O
the	O
end	O
of	O
2024	O
and	O
mass	O
production	O
in	O
2025	O
;	O
Intel	O
forecasts	O
production	O
in	O
2024	O
,	O
and	O
South	O
Korean	O
chipmaker	O
Samsung	B-Application
in	O
2025	O
.	O
</s>
<s>
The	O
term	O
"	O
2	B-Algorithm
nanometer	I-Algorithm
"	O
or	O
alternatively	O
"	O
20	O
angstrom	O
"	O
(	O
a	O
term	O
used	O
by	O
Intel	O
)	O
has	O
no	O
relation	O
to	O
any	O
actual	O
physical	O
feature	O
(	O
such	O
as	O
gate	O
length	O
,	O
metal	O
pitch	O
or	O
gate	O
pitch	O
)	O
of	O
the	O
transistors	O
.	O
</s>
<s>
As	O
such	O
,	O
"	O
2nm	B-Algorithm
"	O
is	O
used	O
primarily	O
as	O
a	O
marketing	O
term	O
by	O
the	O
semiconductor	O
industry	O
to	O
refer	O
to	O
a	O
new	O
,	O
improved	O
generation	O
of	O
chips	O
in	O
terms	O
of	O
increased	O
transistor	O
density	O
(	O
a	O
higher	O
degree	O
of	O
miniaturization	O
)	O
,	O
increased	O
speed	O
,	O
and	O
reduced	O
power	O
consumption	O
compared	O
to	O
the	O
previous	O
3nm	B-Algorithm
node	O
generation	O
.	O
</s>
<s>
By	O
2018	O
,	O
a	O
number	O
of	O
transistor	O
architectures	O
had	O
been	O
proposed	O
for	O
eventual	O
replacement	O
of	O
FinFET	O
,	O
most	O
of	O
which	O
are	O
based	O
on	O
the	O
concept	O
of	O
GAAFET	O
:	O
horizontal	O
and	O
vertical	O
nanowires	O
,	O
horizontal	O
nanosheet	O
transistors	O
(	O
Samsung	B-Application
MBCFET	O
,	O
Intel	O
Nanoribbon	O
)	O
,	O
vertical	O
FET	O
(	O
VFET	O
)	O
,	O
complementary	O
FET	O
(	O
CFET	O
)	O
,	O
stacked	O
FET	O
,	O
and	O
negative-capacitance	O
FET	O
(	O
NC-FET	O
)	O
which	O
uses	O
drastically	O
different	O
materials	O
.	O
</s>
<s>
In	O
late	O
2018	O
,	O
TSMC	O
chairman	O
Mark	O
Liu	O
predicted	O
chip	O
scaling	O
would	O
continue	O
to	O
3nm	B-Algorithm
and	O
2nm	B-Algorithm
nodes	O
;	O
however	O
,	O
as	O
of	O
2019	O
,	O
other	O
semiconductor	O
specialists	O
were	O
undecided	O
as	O
to	O
whether	O
nodes	O
beyond	O
3nm	B-Algorithm
could	O
become	O
viable	O
.	O
</s>
<s>
TSMC	O
began	O
research	O
on	O
2nm	B-Algorithm
in	O
2019	O
—	O
expecting	O
to	O
transition	O
from	O
FinFET	O
to	O
GAAFET	O
transistor	O
type	O
.	O
</s>
<s>
In	O
July	O
2021	O
,	O
TSMC	O
received	O
governmental	O
approval	O
to	O
build	O
its	O
2nm	B-Algorithm
plant	O
.	O
</s>
<s>
In	O
August	O
2020	O
it	O
began	O
building	O
an	O
R&D	O
lab	O
for	O
2nm	B-Algorithm
technology	O
in	O
Hsinchu	O
,	O
expected	O
to	O
become	O
partially	O
operational	O
by	O
2021	O
.	O
</s>
<s>
According	O
to	O
Nikkei	O
the	O
company	O
expects	O
to	O
install	O
production	O
equipment	O
for	O
2nm	B-Algorithm
by	O
2023	O
.	O
</s>
<s>
Intel	O
's	O
2019	O
roadmap	O
scheduled	O
potentially	O
equivalent	O
3nm	B-Algorithm
and	O
2nm	B-Algorithm
nodes	O
for	O
2025	O
and	O
2027	O
respectively	O
,	O
and	O
in	O
December	O
2019	O
announced	O
plans	O
for	O
1.4nm	O
production	O
in	O
2029	O
.	O
</s>
<s>
At	O
the	O
end	O
of	O
2020	O
,	O
seventeen	O
European	O
Union	O
countries	O
signed	O
a	O
joint	O
declaration	O
to	O
develop	O
their	O
entire	O
semiconductor	O
industry	O
,	O
including	O
developing	O
process	O
nodes	O
as	O
small	O
as	O
2nm	B-Algorithm
,	O
as	O
well	O
as	O
designing	O
and	O
manufacturing	O
custom	O
processors	O
,	O
assigning	O
up	O
to	O
145	O
billion	O
euro	O
in	O
funds	O
.	O
</s>
<s>
In	O
May	O
2021	O
,	O
IBM	O
announced	O
it	O
had	O
produced	O
chips	O
with	O
2nm	B-Algorithm
class	O
GAAFET	O
transistors	O
using	O
three	O
silicon	O
layer	O
nanosheets	O
with	O
a	O
gate	O
length	O
of	O
12nm	O
.	O
</s>
<s>
The	O
company	O
confirmed	O
their	O
2nm	B-Algorithm
process	O
node	O
called	O
Intel	B-Algorithm
20A	I-Algorithm
,	O
with	O
the	O
"	O
A	O
"	O
referring	O
to	O
angstrom	O
,	O
a	O
unit	O
equivalent	O
to	O
0.1	O
nanometer	O
.	O
</s>
<s>
Their	O
2021	O
roadmap	O
scheduled	O
the	O
Intel	B-Algorithm
20A	I-Algorithm
node	O
for	O
volume	O
production	O
in	O
2024	O
and	O
Intel	O
18A	O
for	O
2025	O
.	O
</s>
<s>
In	O
October	O
2021	O
,	O
at	O
Samsung	B-Application
Foundry	O
Forum	O
2021	O
,	O
Samsung	B-Application
announced	O
it	O
would	O
start	O
mass	O
production	O
with	O
its	O
MBCFET	O
(	O
multi-bridge	O
channel	O
FET	O
,	O
Samsung	B-Application
's	O
version	O
of	O
GAAFET	O
)	O
2nm	B-Algorithm
process	O
in	O
2025	O
.	O
</s>
<s>
In	O
July	O
2022	O
,	O
Samsung	B-Application
made	O
a	O
number	O
of	O
disclosures	O
regarding	O
the	O
company	O
's	O
forthcoming	O
process	O
technology	O
called	O
2GAP	O
(	O
2nm	B-Algorithm
Gate	O
All-around	O
Production	O
)	O
:	O
the	O
process	O
remains	O
on	O
track	O
for	O
2025	O
launch	O
into	O
mass	O
production	O
;	O
number	O
of	O
nanosheets	O
will	O
increase	O
from	O
3	O
in	O
3GAP	O
to	O
4	O
;	O
the	O
company	O
works	O
on	O
several	O
improvements	O
of	O
metallization	O
,	O
namely	O
"	O
single-grain	O
metal	O
"	O
for	O
low-resistance	O
vias	O
and	O
direct-etched	O
metal	O
interconnect	O
planned	O
for	O
2GAP	O
and	O
beyond	O
.	O
</s>
<s>
In	O
August	O
2022	O
,	O
a	O
consortium	O
of	O
Japanese	O
companies	O
funded	O
a	O
new	O
venture	O
with	O
government	O
support	O
called	O
Rapidus	O
for	O
manufacturing	O
of	O
2nm	B-Algorithm
chips	O
.	O
</s>
<s>
Intel	O
's	O
February	O
2022	O
roadmap	O
added	O
that	O
18A	O
will	O
deliver	O
10%	O
improvement	O
in	O
performance	O
per	O
watt	O
compared	O
to	O
Intel	B-Algorithm
20A	I-Algorithm
and	O
will	O
become	O
manufacturing-ready	O
in	O
2024	O
H2	O
.	O
</s>
<s>
deployment	O
of	O
high-NA	O
(	O
0.55	O
)	O
EUV	B-Algorithm
tools	I-Algorithm
with	O
the	O
first	O
$400	O
million	O
tool	O
to	O
be	O
completed	O
at	O
ASML	O
in	O
2023	O
,	O
and	O
the	O
first	O
production	O
tool	O
to	O
be	O
shipped	O
to	O
Intel	O
in	O
2025	O
;	O
</s>
<s>
In	O
September	O
2022	O
,	O
Samsung	B-Application
presented	O
their	O
future	O
business	O
goals	O
which	O
includes	O
an	O
aim	O
to	O
mass	O
produce	O
1.4nm	O
by	O
2027	O
.	O
</s>
