<s>
In	O
semiconductor	B-Architecture
fabrication	I-Architecture
,	O
the	O
International	O
Technology	O
Roadmap	O
for	O
Semiconductors	O
(	O
ITRS	O
)	O
defines	O
the	O
10	B-Algorithm
nm	I-Algorithm
process	I-Algorithm
as	O
the	O
MOSFET	B-Architecture
technology	O
node	O
following	O
the	O
14	B-Algorithm
nm	I-Algorithm
node	O
.	O
</s>
<s>
10	B-Algorithm
nm	I-Algorithm
class	O
denotes	O
chips	O
made	O
using	O
process	O
technologies	O
between	O
10	O
and	O
20	O
nm	O
.	O
</s>
<s>
All	O
production	O
10nm	B-Algorithm
processes	O
are	O
based	O
on	O
FinFET	O
(	O
fin	O
field-effect	O
transistor	O
)	O
technology	O
,	O
a	O
type	O
of	O
multi-gate	B-Algorithm
MOSFET	I-Algorithm
technology	O
that	O
is	O
a	O
non-planar	O
evolution	O
of	O
planar	O
silicon	O
CMOS	B-Device
technology	O
.	O
</s>
<s>
Samsung	B-Application
first	O
started	O
their	O
production	O
of	O
10nm-class	O
chips	O
in	O
2013	O
for	O
their	O
multi-level	B-Device
cell	I-Device
(	O
MLC	O
)	O
flash	B-Device
memory	I-Device
chips	O
,	O
followed	O
by	O
their	O
SoCs	O
using	O
their	O
10nm	B-Algorithm
process	O
in	O
2016	O
.	O
</s>
<s>
TSMC	O
began	O
commercial	O
production	O
of	O
10nm	B-Algorithm
chips	O
in	O
2016	O
,	O
and	O
Intel	O
later	O
began	O
production	O
of	O
10nm	B-Algorithm
chips	O
in	O
2018	O
.	O
</s>
<s>
For	O
example	O
,	O
GlobalFoundries	O
 '	O
7	O
nm	O
processes	O
are	O
similar	O
to	O
Intel	O
's	O
10nm	B-Algorithm
process	O
,	O
thus	O
the	O
conventional	O
notion	O
of	O
a	O
process	O
node	O
has	O
become	O
blurred	O
.	O
</s>
<s>
TSMC	O
and	O
Samsung	B-Application
's	O
10nm	B-Algorithm
processes	O
are	O
somewhere	O
between	O
Intel	O
's	O
14nm	B-Algorithm
and	O
10nm	B-Algorithm
processes	O
in	O
transistor	O
density	O
.	O
</s>
<s>
In	O
2008	O
,	O
Pat	O
Gelsinger	O
,	O
at	O
the	O
time	O
serving	O
as	O
Intel	O
's	O
Chief	O
Technology	O
Officer	O
,	O
said	O
that	O
Intel	O
saw	O
a	O
'	O
clear	O
way	O
 '	O
towards	O
the	O
10nm	B-Algorithm
node	O
.	O
</s>
<s>
In	O
2011	O
,	O
Samsung	B-Application
announced	O
plans	O
to	O
introduce	O
the	O
10nm	B-Algorithm
process	O
the	O
following	O
year	O
.	O
</s>
<s>
In	O
2012	O
,	O
Samsung	B-Application
announced	O
eMMC	O
flash	B-Device
memory	I-Device
chips	O
that	O
are	O
produced	O
using	O
the	O
10nm	B-Algorithm
process	O
.	O
</s>
<s>
In	O
actuality	O
,	O
"	O
10nm	B-Algorithm
"	O
as	O
it	O
is	O
generally	O
understood	O
in	O
2018	O
is	O
only	O
in	O
high-volume	O
production	O
at	O
Samsung	B-Application
.	O
</s>
<s>
GlobalFoundries	O
has	O
skipped	O
10nm	B-Algorithm
,	O
Intel	O
has	O
not	O
yet	O
started	O
high-volume	O
10nm	B-Algorithm
production	O
,	O
due	O
to	O
yield	O
issues	O
,	O
and	O
TSMC	O
has	O
considered	O
10nm	B-Algorithm
to	O
be	O
a	O
short-lived	O
node	O
,	O
mainly	O
dedicated	O
to	O
processors	O
for	O
Apple	O
during	O
2017	O
–	O
2018	O
,	O
moving	O
on	O
to	O
7	B-Algorithm
nm	I-Algorithm
in	O
2018	O
.	O
</s>
<s>
There	O
is	O
also	O
a	O
distinction	O
to	O
be	O
made	O
between	O
10nm	B-Algorithm
as	O
marketed	O
by	O
foundries	O
and	O
10nm	B-Algorithm
as	O
marketed	O
by	O
DRAM	O
companies	O
.	O
</s>
<s>
In	O
April	O
2013	O
,	O
Samsung	B-Application
announced	O
that	O
it	O
had	O
begun	O
mass	O
production	O
of	O
multi-level	B-Device
cell	I-Device
(	O
MLC	O
)	O
flash	B-Device
memory	I-Device
chips	O
using	O
a	O
10nm-class	O
process	O
,	O
which	O
,	O
according	O
to	O
Tom	O
's	O
Hardware	O
,	O
Samsung	B-Application
defined	O
as	O
"	O
a	O
process	O
technology	O
node	O
somewhere	O
between	O
10-nm	O
and	O
20-nm	O
"	O
.	O
</s>
<s>
On	O
17	O
October	O
2016	O
,	O
Samsung	B-Application
Electronics	O
announced	O
mass	O
production	O
of	O
SoC	B-Architecture
chips	O
at	O
10nm	B-Algorithm
.	O
</s>
<s>
The	O
technology	O
's	O
main	O
announced	O
challenge	O
has	O
been	O
triple	B-Algorithm
patterning	I-Algorithm
for	O
its	O
metal	O
layer	O
.	O
</s>
<s>
TSMC	O
began	O
commercial	O
production	O
of	O
10nm	B-Algorithm
chips	O
in	O
early	O
2016	O
,	O
before	O
moving	O
onto	O
mass	O
production	O
in	O
early	O
2017	O
.	O
</s>
<s>
On	O
21	O
April	O
2017	O
,	O
Samsung	B-Application
started	O
shipping	O
their	O
Galaxy	B-Application
S8	I-Application
smartphone	O
which	O
uses	O
the	O
company	O
's	O
version	O
of	O
the	O
10nm	B-Algorithm
processor	O
.	O
</s>
<s>
On	O
12	O
June	O
2017	O
,	O
Apple	O
delivered	O
second-generation	O
iPad	B-Device
Pro	I-Device
tablets	O
powered	O
with	O
TSMC-produced	O
Apple	B-Device
A10X	I-Device
chips	O
using	O
the	O
10nm	B-Algorithm
FinFET	O
process	O
.	O
</s>
<s>
On	O
12	O
September	O
2017	O
,	O
Apple	O
announced	O
the	O
Apple	B-Device
A11	I-Device
,	O
a	O
64-bit	O
ARM-based	O
system	B-Architecture
on	I-Architecture
a	I-Architecture
chip	I-Architecture
,	O
manufactured	O
by	O
TSMC	O
using	O
a	O
10nm	B-Algorithm
FinFET	O
process	O
and	O
containing	O
4.3	O
billion	O
transistors	O
on	O
a	O
die	O
of	O
87.66mm2	O
.	O
</s>
<s>
In	O
April	O
2018	O
,	O
Intel	O
announced	O
a	O
delay	O
in	O
volume	O
production	O
of	O
10nm	B-Algorithm
mainstream	O
CPUs	O
until	O
sometime	O
in	O
2019	O
.	O
</s>
<s>
In	O
the	O
meantime	O
,	O
however	O
,	O
they	O
did	O
release	O
a	O
low-power	O
10nm	B-Algorithm
mobile	O
chip	O
,	O
albeit	O
exclusive	O
to	O
Chinese	O
markets	O
and	O
with	O
much	O
of	O
the	O
chip	O
disabled	O
.	O
</s>
<s>
In	O
June	O
2018	O
at	O
VLSI	O
2018	O
,	O
Samsung	B-Application
announced	O
their	O
11LPP	O
and	O
8LPP	O
processes	O
.	O
</s>
<s>
11LPP	O
is	O
a	O
hybrid	O
based	O
on	O
Samsung	B-Application
14nm	B-Algorithm
and	O
10nm	B-Algorithm
technology	O
.	O
</s>
<s>
11LPP	O
is	O
based	O
on	O
their	O
10nm	B-Algorithm
BEOL	O
,	O
not	O
their	O
20nm	O
BEOL	O
like	O
their	O
14LPP	O
.	O
</s>
<s>
Nvidia	O
released	O
their	O
GeForce	B-Device
30	I-Device
series	I-Device
GPUs	O
in	O
September	O
2020	O
.	O
</s>
<s>
They	O
are	O
made	O
on	O
a	O
custom	O
version	O
of	O
Samsung	B-Application
's	O
8nm	O
process	O
,	O
called	O
Samsung	B-Application
8N	O
,	O
with	O
a	O
transistor	O
density	O
of	O
44.56	O
million	O
transistors	O
per	O
mm2	O
.	O
</s>
<s>
ITRS	O
Logic	O
DeviceGround	O
Rules	O
(	O
2015	O
)	O
Samsung	B-Application
TSMC	O
Intel	O
Process	O
name	O
16/14	O
nm	O
11/10	O
nm	O
10LPE(10 nm )	O
10LPP(10 nm )	O
8LPP(8 nm )	O
8LPU(8 nm )	O
8LPA(8 nm )	O
10FF(10 nm )	O
10nm	B-Algorithm
10nm	B-Algorithm
SF(10 nm )	O
Transistor	O
density	O
(	O
MTr	O
/	O
mm2	O
)	O
51.82	O
61.18	O
?	O
52.51100.76	O
Transistor	O
gate	O
pitch	O
(	O
nm	O
)	O
70	O
48	O
68	O
64	O
?	O
</s>
<s>
Samsung	B-Application
reported	O
their	O
10nm	B-Algorithm
process	O
as	O
having	O
a	O
64nm	O
transistor	O
gate	O
pitch	O
and	O
48nm	O
interconnect	O
pitch	O
.	O
</s>
<s>
TSMC	O
reported	O
their	O
10nm	B-Algorithm
process	O
as	O
having	O
a	O
64nm	O
transistor	O
gate	O
pitch	O
and	O
42nm	O
interconnect	O
pitch	O
.	O
</s>
<s>
In	O
addition	O
,	O
the	O
transistor	O
fin	O
height	O
of	O
Samsung	B-Application
's	O
10nm	B-Algorithm
process	O
was	O
updated	O
by	O
MSSCORPS	O
CO	O
at	O
SEMICON	O
Taiwan	O
2017	O
.	O
</s>
<s>
GlobalFoundries	O
decided	O
not	O
to	O
develop	O
a	O
10nm	B-Algorithm
node	O
,	O
because	O
it	O
believed	O
it	O
would	O
be	O
short	O
lived	O
.	O
</s>
<s>
Samsung	B-Application
's	O
8nm	O
process	O
is	O
the	O
company	O
's	O
last	O
to	O
exclusively	O
use	O
DUV	O
lithography	O
.	O
</s>
<s>
For	O
the	O
DRAM	O
industry	O
,	O
the	O
term	O
"	O
10nm-class	O
"	O
is	O
often	O
used	O
and	O
this	O
dimension	O
generally	O
refers	O
to	O
the	O
half-pitch	O
of	O
the	O
active	O
area	O
.	O
</s>
<s>
The	O
"	O
10nm	B-Algorithm
"	O
foundry	O
structures	O
are	O
generally	O
much	O
larger	O
.	O
</s>
<s>
As	O
of	O
2020	O
there	O
are	O
three	O
generations	O
of	O
10nm	B-Algorithm
class	O
DRAM	O
:	O
1xnm	O
(	O
19-17nm	O
,	O
Gen1	O
)	O
;	O
1ynm	O
(	O
16-14nm	O
,	O
Gen2	O
)	O
;	O
and	O
1znm	O
(	O
13-11nm	O
,	O
Gen3	O
)	O
.	O
</s>
<s>
3rd	O
Generation	O
"	O
1z	O
"	O
DRAM	O
was	O
first	O
introduced	O
c.2019	O
by	O
Samsung	B-Application
,	O
and	O
was	O
initially	O
stated	O
to	O
be	O
produced	O
using	O
ArF	O
lithography	O
without	O
the	O
use	O
of	O
EUV	O
lithography	O
;	O
subsequent	O
production	O
did	O
utilise	O
EUV	O
lithography	O
.	O
</s>
<s>
Beyond	O
1z	O
Samsung	B-Application
names	O
its	O
next	O
node	O
(	O
fourth	O
generation	O
10nm	B-Algorithm
class	O
)	O
DRAM	O
:	O
"	O
D1a	O
"	O
(	O
for	O
2021	O
)	O
,	O
and	O
beyond	O
that	O
D1b	O
(	O
expected	O
2022	O
)	O
;	O
whilst	O
Micron	O
refers	O
to	O
succeeding	O
"	O
nodes	O
"	O
as	O
"	O
D1α	O
"	O
and	O
"	O
D1β	O
"	O
.	O
</s>
