Lee, S. L. and Lee, C. K. and Sinclair, D. C. and Chong, F. K. and Halim, S. A. and Yap, T. (2005) Preparation and Characterization of New Oxide Ion Conductors in Bi2O3-As2O5 System. Malaysian Journal of Chemistry, 7 (1). pp. 1-10.
Official URL: http://www.ikm.org.my/downloads/JournalPDFs/MJC7_0...
Materials in xBi2O3-As2O5 binary system: 1 < x < 7, were prepared by solid state reaction. XRD shows that single phase materials were formed when x = 5, 5.5, 5.667, 5.75, 6 and 7. The symmetry and space group of the materials were determined. Compositions with 5 < x < 6.25 are solid solutions. Electrical properties of the single phase materials were studied using ac impedance spectroscopy at a frequency range of 10 Hz to 13 MHz. These materials are thermally stable and appear to be oxide ion conductors. Highest conductivity was obtained in Bi23As4O44.5 with s value of 5.66 x 10-5 ohm-1 cm-1, Ea = 0.72 eV at 300oC.
|Uncontrolled Keywords:||bismuth arsenate, oxide ion conductor|
|Subjects:||Q Science > QD Chemistry|
|Deposited By:||Dr Siew Ling Lee|
|Deposited On:||08 Oct 2008 04:49|
|Last Modified:||26 Oct 2010 04:31|
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