Vishay Intertechnology has expanded its MICRO FOOT TrenchFET Gen III power MOSFET family with two p-channel, 30V chipscale MOSFETs. The company's TrenchFET Gen III p-channel technology uses advanced process techniques to pack one billion transistor cells into each square inch of silicon. It allows a superfine, sub-micron pitch process that reduces the on-resistance for a p-channel MOSFET, claims the company. Chipscale Micro Foot technology allows the use of a large die for a given outline, which means a low on-resistance for a given device area, says the company.
The MOSFETs are suitable for load, battery, and charger switching in handheld devices including smart phones, tablets, PoS devices, and mobile computing. In laptop battery management circuits, the MOSFETs' low on-resistance translates into low voltage drops across the load switch, which in turn reduces the occurrence of problem under-voltage lockouts. In charger applications for handheld devices, the low on-resistance means that high charge currents can be used, facilitating fast battery charging, according to the company.
The 1x1.5x0.59mm Si8497DB offers on-resistance of 53, 71, and 120mΩ at 4.5, 2.5, and 2V, respectively. It is pin compatible with the company's 30V Si8409DB. The 1.6x1.6x0.6mm Si8487DB offers on-resistance of 31, 35, and 45mΩ at 10, 4.5, and 2.5V, respectively. Both the MOSFETs are halogen-free in accordance with the IEC 61249-2-21 definition and are compliant to RoHS Directive 2002, 95 and EC.