Aamir, MA and Goswami, Srijit and Baenninger, Matthias and Tripathi, Vikram and Pepper, Michael and Farrer, Ian and Ritchie, David A and Ghosh, Arindam (2012) Colossal nonsaturating linear magnetoresistance in two-dimensional electron systems at a GaAs/(Al,Ga)As heterointerface. In: PHYSICAL REVIEW B, 86 (8).
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Engineering devices with a large electrical response to magnetic field is of fundamental importance for a range of applications such as magnetic field sensing and magnetic read heads. We show that a colossal nonsaturating linear magnetoresistance (NLMR) arises in two-dimensional electron systems hosted in a GaAs/AlGaAs heterostructure in the strongly insulating regime. When operated at high source-drain bias, the magnetoresistance of our devices increases almost linearly with magnetic field, reaching nearly 10 000% at 8 T, thus surpassing many known nonmagnetic materials that exhibit giant NLMR. The temperature dependence and mobility analysis indicate that the NLMR has a purely classical origin, driven by nanoscale inhomogeneities. A large NLMR combined with small device dimensions makes these systems an attractive candidate for on-chip magnetic field sensing.
|Item Type:||Journal Article|
|Additional Information:||Copyright for this article belongs to AMER PHYSICAL SOC|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||19 Nov 2012 11:30|
|Last Modified:||19 Nov 2012 11:30|
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