OSIRIS will address a crucial and ultimately strategic area for the future emerging nanoelectronics, i.e. how structures and devices actually will be fabricated as physical dimensions approach a few nanometer minimum feature size. The project title is “_O_pen _si_licon based _r_esearch platform for emerg_i_ng device_s_”, it indicates that many of the future emerging devices will be based on a silicon fabrication base platform but may not be fully based on silicon as the active semiconductor material. Over the past ten years the research team at Device Technology has established a versatile fabrication technology platform in excellent condition to open up a variety of new technologies to explore nanometer minimum feature size in realizable and repeatable electrical devices structures.
OSIRIS has five different focused areas outlined. They cover a broad range of critical research issues that can be foreseen as groundbreaking topics for the period beyond 2015. The different topics addressed are:
1) Three-dimensional FET nanostructures based on SiNW and GeNW with advanced configuration and heterogeneous integration of compound semiconductors on silicon.
2) New applications of SiNW with built-in strain for fast silicon-based optoelectronic devices.
3) Low frequency noise in advanced nanoelectronic structures
4) Bio-sensor nanoelectronics for extreme bio-molecule sensitivity and real-time detection of DNA.
Biosensor nanoelectronics, Strained SiNW for optoelectronic devices, Three-dimensional FET nanostructures