Temperature invariance of InN electron accumulation
UNSPECIFIED. (2004) Temperature invariance of InN electron accumulation. PHYSICAL REVIEW B, 70 (11). -. ISSN 1098-0121Full text not available from this repository.
Official URL: http://dx.doi.org/10.1103/PhysRevB.70.115333
The temperature dependence of the electron accumulation at clean InN(0001)-(1x1) surfaces has been investigated by high-resolution electron-energy-loss spectroscopy. Semiclassical dielectric theory simulations of the energy-loss spectra at 295 K and 565 K along with solutions to the Poisson equation enable carrier profiles of the near-surface region to be determined. These measurements reveal similar electron accumulation for both temperatures. The surface-state density, N-ss, and the surface Fermi level, E-FS, were found to be independent of temperature, with N(ss)similar to2.4x10(13) cm(-2) and E(FS)similar to1.5 eV above the valence-band maximum. The slight difference in the carrier profiles between the two temperatures can be accounted for by the change in the electron screening length. This is a consequence of the reduction in the band gap that results in a decrease in the electron effective mass with increasing temperature.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||PHYSICAL REVIEW B|
|Publisher:||AMERICAN PHYSICAL SOC|
|Official Date:||September 2004|
|Number of Pages:||6|
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