Kolawa, E. and So, F. C. T. and Pan, E. T-S. and Nicolet, M.-A. (1987) Reactively sputtered RuO2 diffusion barriers. Applied Physics Letters, 50 (13). pp. 854-855. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:KOLapl87
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The thermal stability of reactively sputtered RuO2 films is investigated from the point of view of their application as diffusion barriers in silicon contact metallizations with an Al overlayer. Backscattering spectra of Si/RuO2/Al samples and electrical measurements on shallow junction diodes with Si/TiSi2.3/RuO2/Al contacts both show that RuO2 films are effective diffusion barriers between Al and Si for 30-min annealing at temperatures as high as 600°C.
|Additional Information:||© 1987 American Institute of Physics. Received 19 November 1986; accepted 26 January 1987. The authors gratefully acknowledge technical assistance from R. Gorris, help in scanning electron microscopy analysis from Rindge Shima, and manuscript preparation by A. Collinwood. Financial support from the Army Research Office under contract number DAAG29-85-K-0192 is also gratefully acknowledged.|
|Subject Keywords:||RUTHENIUM OXIDES; DIFFUSION BARRIERS; SILICON; ALUMINIUM; ATOM TRANSPORT; DIFFUSION; SPUTTERING; STABILITY; ELECTRICAL PROPERTIES; JUNCTION DIODES|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Tony Diaz|
|Deposited On:||08 May 2006|
|Last Modified:||26 Dec 2012 08:51|
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