- Matloubian, M. and Brown, A.S. and Nguyen, L.D. and Melendes, M.A. and Larson, L.E. and Delaney, M.J. and Thompson, M.A. and Rhodes, R.A. and Pence, J.E., 20-GHz high-efficiency AlInAs-GaInAs on InP power HEMT,
IEEE Microwave and Guided Wave Letters, vol. 3 no. 5
pp. 142 - 144 [75.217211] .
(last updated on 2007/04/14)
A single stage 20-GHz power amplifier was developed using double-doped AlInAs-GaInAs on InP HEMT. Output power of 516 mW (0.645 W/mm) with power-added efficiency of 47.1% with 7.1-dB gain were obtained from an 800-μm wide device. The device had a saturated output power of more than 560 mW (0.7 W/mm). This is believed to be the highest combination of output power, power density, gain, and power-added efficiency reported for an InP-based FET at this frequency.
Semiconducting aluminum compounds;Semiconducting indium compounds;Semiconducting gallium arsenide;Power amplifiers;Gain measurement;Electric power measurement;