|Número de publicación||US7330279 B2|
|Tipo de publicación||Concesión|
|Número de solicitud||US 10/206,491|
|Fecha de publicación||12 Feb 2008|
|Fecha de presentación||25 Jul 2002|
|Fecha de prioridad||25 Jul 2002|
|También publicado como||CN1310011C, CN1672012A, DE10392975T5, US7505153, US20040017574, US20080151269, WO2004013723A2, WO2004013723A3|
|Número de publicación||10206491, 206491, US 7330279 B2, US 7330279B2, US-B2-7330279, US7330279 B2, US7330279B2|
|Inventores||Vi Vuong, Emmanuel Drege, Junwei Bao, Srinivas Doddi, Xinhui Niu, Nickhil Jakatdar|
|Cesionario original||Timbre Technologies, Inc.|
|Exportar cita||BiBTeX, EndNote, RefMan|
|Citas de patentes (30), Otras citas (3), Citada por (46), Clasificaciones (29), Eventos legales (4)|
|Enlaces externos: USPTO, Cesión de USPTO, Espacenet|
This application relates to co-pending U.S. patent application Ser. No. 09/727,530, entitled “System and Method for Real-Time Library Generation of Grating Profiles” by Jakatdar, et al., filed on Nov. 28, 2000; to co-pending U.S. patent application Ser. No. 09/907,488, entitled “Generation of a Library of Periodic Grating Diffraction Signals”, filed Jul. 16, 2001, by Niu et al.; to co-pending U.S. patent application Ser. No. 09/737,705 entitled “System and Method for Grating Profile Classification” by Doddi, et al., filed on Dec. 14, 2000; to co-pending U.S. patent application Ser. No. 09/770,997, entitled “Caching of Intra-layer Calculations for Rapid Rigorous Couple-Wave Analyses”, by Niu et al., filed on Jan. 26, 2000; and to co-pending U.S. patent application Ser. No. 10/162,516 entitled “Selection of Wavelengths for Integrated Circuit Optical Metrology, by Doddi, et al., filed on Jun. 3, 2002, all owned by the assignee of this application and incorporated herein by reference.
1. Field of Invention
This application relates to integrated circuit (IC) metrology and more particularly to the selection of a structure model and parameters for optical metrology.
2. Related Art
With the current drive towards smaller geometries of IC devices, measurement of IC device features is increasingly difficult as the size of the features become smaller. One method of measuring the features involves the use of gratings or periodic structures formed in test areas of a wafer that are proximate to or within the devices or circuits on the wafer. Knowledge of the dimensions of the gratings or periodic structures is essential in order to determine if the dimensions of the structure are within acceptable ranges and if, for example, a particular fabrication process causes the sidewalls of the features to be tapered, vertical, T-topped, undercut, or have footings.
Measurement of the periodic structure features may be done with a scanning electron microscope (SEM) or similar device where the sample is cleaved and examined. The cross-section SEM method is typically slow, expensive, destructive, and typically only provides one measurement number seen from the top of the feature.
Another measurement technique uses scatterometry. In scatterometry, spectroscopic reflectometry and ellipsometry, multiple-angle-of-incidence (MAI) devices, and mixed design systems are typically used to shine light on the structure and measure the reflected light. Empirical scatterometry basically uses an approach where the diffraction signals are measured for known widths of features of a structure, the pair of diffraction signals and structure widths used to create a library. Even for a limited library of structure dimensions and associated diffraction signals, the empirical scatterometry technique for building a library is time consuming and expensive. As the resolution of the structure dimension increases, the size of the library increases while the time to create and use the library increases considerably.
In another measurement technique, instead of using a library of diffraction signals and profile data, regression is used to determine the profile data from the measured diffraction signal. In using regression, one or more optimization techniques may be used to determine the profile data from the measured diffraction signal.
The length of time needed to create a library or to make a regression result converge varies depending on the profile model used and the number of parameters used to represent the profile model in the diffraction signal calculations. Typically, the more complicated the profile model and the more parameters used, the more time and/or computing resources needed to retrieve the desired information from measurements.
In an exemplary embodiment, a profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. A set of optimization parameters is selected for the profile model using one or more input diffraction signals and one or more parameter selection criteria. The selected profile model and the set of optimization parameters are tested against one or more termination criteria. The process of selecting a profile model, selecting a set of optimization parameters, and testing the selected profile model and set of optimization parameters is performed until the one or more termination criteria are met.
In order to facilitate the description of the present invention, either an ellipsometric or reflectometric optical metrology system is used to illustrate certain concepts and principles. Graphs of diffraction signals off wafer structures using an ellipsometer, e.g., cos (Δ) and tan (Ψ), will be utilized to describe certain exemplary embodiments while reflectometric reflectance graphs will be utilized to describe others. It is understood that the same concepts and principles equally apply to ellipsometric, reflectometric, or other optical metrology systems.
For example, a cost function between a simulated signal off the structure using the profile model parameters compared to a measured signal may be used as a termination criterion. One cost function comparison is illustrated by the equations below, where V1 and V2 are two vectors of size n, and the cost function of V1 relative to V2 is:
where i represents the i th member of the vector and p is an arbitrary number associated with the metric. The first vector is the set of signal values at measurement points for the metrology device used and the second vector is the corresponding set of simulated signal values at the same points. A cost function termination criterion may be set at a specific number, for example, 0.25. Another termination criterion may be the goodness of fit (GOF) between the graph of the measured and simulated signal values. The GOF is a measure of the proximity of two sets of values. For example, when ellipsometric measurements are used, GOF is based on values for tan ψ and cos Δ, where tan ψ and cos Δ are represented by a single vector of n dimensions:
S=[tan ψ1 tan ψ2 . . . tan ψn/2 cos Δ1 cos Δ2 . . . cos Δn] (1.10)
One commonly used formula for GOF between a measured signal Sm compared to a simulated signal Ss is:
where i represents the i th measurement point for an optical metrology device, n is the total number of measurements for the optical metrology device.
Another termination criterion is a confidence interval cutoff value for optimization parameters. Optimization parameters and confidence intervals are explained in more detail below. Associated with a profile model is a set of geometric parameters. Optimization parameters are derived from the geometric parameters of the profile model. The process of deriving the optimization parameters from the geometric parameters will also be discussed in detail in
In step 320, one or more criteria for selection of profile model parameters are determined. Profile selection criteria may include a specific correlation coefficient or sensitivity of a profile parameter. For example, a cutoff of 0.99 correlation may be used to select parameters. Alternatively, a specific change in the signal (ΔS) may be required for each incremental change of the profile parameter (ΔP), where ΔS/ΔP is a measure of the sensitivity of the parameter. The parameter selection criteria will be discussed in more detail in
Still referring to
In step 340, the structure characterization is converted into a profile model. A profile model may be a simple rectangle with two parameters designating the height and width of the rectangle. In
As can be seen in
In step 350 of
In step 360, the simulation calculation is optimized by balancing the speed of simulation computations with the accuracy of the computed signal. For example, variables such as number or range of diffraction wavelengths used and the number of diffraction orders considered are optimized to yield the least number of simulation variables and the highest accuracy of the computed signal.
In step 370, a test is performed to see if the termination criteria are met. For example, if one of the termination criteria is a cost function value of less than or equal to 2.50, then the cost function value of a simulated signal using the selected parameters of the selected model is compared to a corresponding measured signal. If the cost function value is 2.20, then this criterion is met. Additionally, a second termination criterion may be a GOF of 0.9990 or greater. Referring to
Referring now to
Referring now to
In step 380, when the termination criteria are met, the profile model, the selected profile parameters, the parameter selection criteria, the termination criteria, and identification data regarding the fabrication, wafer site, and metrology device are saved in a data store.
The results of model and parameter selection may be utilized in several ways. In step 390, a library of simulated diffraction signals and associated profile data is created using the ranges and resolutions of the selected parameters of the selected model. For a description of the process for creating a library using ranges and resolutions of parameters, refer to co-pending U.S. patent application Ser. No. 09/727,530 entitled “System and Method for Real-Time Library Generation of Grating Profiles” by Jakatdar, et al., filed on Nov. 28, 2000, and is incorporated in its entirety herein by reference. Alternatively, in step 395, the results of model and parameter selections are displayed. In one embodiment, the values of the critical dimensions, profile shape, and film thickness are made available as soon as the one or more termination criteria are met. In another embodiment, some or all of the data saved in step 390 are displayed. In still another embodiment, in step 398, the results of profile model and parameter selection are utilized for fabrication cluster feed-forward or feed-backward control loops. Details of this aspect are discussed in
As noted above, the description of
Still referring to
In step 440, measured optical metrology diffraction signals are selected from the input measured diffraction signals. The type and amount of data varies according to whether an ellipsometer, reflectometer, or other scatterometric device is used, and depending on the manufacturer of the device. Selection of measured diffraction signals involves several steps designed to test a small number of representative diffraction signals using selection techniques such as clustering, correlation, and the like. The measured diffraction signals are categorized into groups using one or more of the selection techniques listed above. For a description of clustering in optical metrology, refer to co-pending U.S. patent application Ser. No. 09/737,705 entitled “System and Method for Grating Profile Classification” by Doddi, et al., filed on Dec. 14, 2000, incorporated in its entirety herein by reference. Representatives of each cluster or group of highly correlated measured diffraction signal are identified and selected for use in the model and parameter selection processing.
In step 450, the signal off a structure is simulated utilizing the layer stack and structure profile developed from the characterization of the profile. For a description of simulation of diffraction signals off a hypothetical structure, refer to co-pending U.S. patent application Ser. No. 09/770,997, entitled “Caching of Intra-layer Calculations for Rapid Rigorous Couple-Wave Analyses”, by Niu et al., filed on Jan. 26, 2000, incorporated in its entirety herein by reference.
In step 460 of
Still referring to
As noted above, the description of
With reference to
If the geometric shape for a layer is a trapezoid, three geometric parameters can be used, namely, the top width, the bottom width, and height of the trapezoid. If a double-trapezoid 925 is used as in
The profile model 930 of
In step 530 of
In step 540, the dependencies of the geometric parameters are defined. Again, the dependencies of the geometric parameters are based on historical or test results for the particular fabrication process of recipe. For example, in a shallow trench isolation (STI) structure having a silicon nitride cap and a silicon trench, the nitride cap typically determines the CD of the top width of the silicon trench. In this case, the independent geometric parameter is the nitride cap bottom CD. The top CD of the nitride cap and the top width of the silicon trench may be tied to the bottom CD of the nitride cap.
Using the double-trapezoid model 925 of
Still referring to
The result of the conversion is an equation in terms of the optimization parameter x1 For example, the equation for each geometric parameter ai of the double trapezoid shown in
where a0, a1, a2, a3, and a4 are the geometric parameters of the profile model as defined above, expressed in nanometers, and x0 and x1 are the optimization parameters of the profile model. Note that the five geometric parameters have been converted into two optimization parameters. It should be noted that more complicated profile models may typically require more geometric parameters and may generally require a corresponding higher number of optimization parameters. It is understood to a person knowledgeable in the art, that other equivalent ways of expressing the dependencies of the geometric parameters to optimization parameters may be used.
As noted above, the description of
In step 820, the correlation between the optimization parameters is determined. Typically, a correlation coefficient, r, between two optimization parameters is calculated using the formula:
where x1 and y1 is a pair of optimization parameters, x is the mean of xi's and y is the mean of yi's. The value of r lies between −1 and +1 inclusive. A correlation coefficient value of +1 can correspond to complete positive correlation and a value of −1 can correspond to complete negative correlation. A value of r close to zero can correspond to the x and y optimization parameters not being correlated.
In step 830 of
where N is the number of measurements, xi is the i th value of the optimization parameter x, and xav is the average value of the optimization parameter x.
The confidence interval is typically calculated from a given set of sample input data representing actual measurements off the wafer structure. The confidence interval may also be calculated using simulated random noise introduced in the measurement data for the optimization parameter.
With reference to
Assuming that the same structure as discussed in
In step 840 of
The sensitivity of an optimization parameter may be quantitatively expressed by calculating the sum-square-error (SSE) of the changed signal compared to the signal using nominal values. The SSE formula is as follows:
where i is the signal simulation point, typically at a preset wavelength, n is the number of signal simulation points, S0 is the simulated signal value using nominal values of optimization parameters, S1 is the simulated signal value using nominal plus change in one of the optimization parameters.
In step 870 of
In step 890, a procedure is performed to determine the optimized simulation diffraction signal to the measured signal using the selected optimization parameters of the selected profile model. One embodiment uses a regression technique to get to the optimized simulation signal. One or more types of regression engines may be used.
With reference to
Part of the parameter selector 1830 function is to perform a procedure to determine the optimized simulated signal for each measured signal, invoking one or more optimization engines discussed in
As can be seen in
As discussed previously, the optimization parameter selection selects parameters that are uncorrelated, have high sensitivity, and allows detection of the change in parameter size required by the application. The selected optimization parameters of the profile model are used to simulate the diffraction signals for different profile dimensions, and the simulated diffraction signals are compared to the corresponding measured signals to calculate the cost function and GOF. Once the profile model selected and the selected optimization parameters of the selected profile model provide simulated diffraction signals results that meet or exceed the termination criteria, then the selection process is complete. As discussed above, the regression results such as CD's, film thickness, and profile from the parameter selector 1830 of
It is contemplated that functional implementation of the exemplary embodiments described herein may be implemented equivalently in hardware, software, firmware, and/or other available functional components or building blocks. Other variations and embodiments are possible in light of above teachings, and it is thus intended that the scope of invention not be limited by this Detailed Description, but rather by claims following.
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|Clasificación de EE.UU.||356/625, 438/16, 702/155, 250/559.19, 250/559.22|
|Clasificación internacional||G01B11/08, G06F15/00, G01B11/02, G01N21/00, G01B11/04, G01N21/86, G01B11/06, G06F19/00, G06F, G01B11/22, G01R31/26, G01B11/14, G01B11/28, G01B15/00, G01V8/00, G01B7/00, H01L21/66, G01N21/41, G01B11/00|
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|Clasificación europea||G03F7/70L2B, G03F7/70L10|
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