Toshiba has started sample shipments of its second-generation 512Mb XDR DRAM, offering operating speeds of 4.8 to 6.4 Gbps at each pin, the fastest data transfer rate yet attained by any memory device.
The product is targeted at applications such as digital home appliances, high-performance 3D graphics boards and network systems.
The TC59YM916BKG is the second-generation DRAM product embedded with an XDR interface developed by Rambus, Inc of the US. The first-generation XDR DRAM product only achieved a peak operating speed of 3.2Gbps per pin. The TC59YM916BKG transfers data at 4.8GHz with a 1.8V VDD and supports peak operation of 6.4GHz: four times faster than the performance of 1.6GHz graphic double data rate (GDDR) memory chips and 12 times faster than best-in-class 533MHz PC memories.
To boost operating speeds, the 2G XDR DRAM product utilizes octal data rate (ODR) technology, which transfers eight data per clock cycle. In the new product's specifications, Toshiba said it has achieved a peak operating speed of 4.8Gbps when using a 600MHz clock rate. The company also said it has confirmed a peak operating speed of 6.4Gbps when using an 800MHz clock rate. The memory device is based on 0.2V differential rambus signal level (DRSL) technology.
The power source voltage of the TC59YM916BKG is +1.8V. The minimum row cycle time (tRC) is 40ns. The package uses 1.27 x 0.8mm BGA to support PWBs with the smaller number of layers. The configuration is 4Mb word x 8 banks x 16 bits. The interface is x4/x8/x16 programmable.
According to Shozo Saito, vice president of Memory Division, Semiconductor Company at Toshiba Corp, the company plans to mass-produce the second-generation 512Mb XDR DRAMs in the second half of 2005 in order to secure its leading position in this business area.
From NE Asia Online