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|Title: ||Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition|
|Authors: ||Ruslinda, Abd. Rahim|
Uda, Hashim, Prof. Dr.
|Keywords: ||Atomic force microscopy;Carbon;Focused ion beam;Nanocrystal;Organic thin film transistor;Raman spectroscopy;International Conference on Nanoscience and Nanotechnology (ICONN)|
|Issue Date: ||1-Jun-2009|
|Publisher: ||American Institute of Physics|
|Citation: ||Vol. 1136, p.297-301|
|Series/Report no.: ||Proceedings of the International Conference on Nanoscience and Nanotechnology (ICONN) 2008|
|Abstract: ||Metal-insulator-semiconductor field effect transistor (MISFET) structures with a nanocrystal carbon (nc-C) embedded in SiO2 thin films using a focused ion beam chemical vapor deposition (FIBCVD) system with a precursor of low energy Ga+ ion and carbon source to fabricate organic thin film transistor (OTFT) memories. The crystallinity of nc-C was investigated by Raman spectroscopy and atomic force microscopy (AFM). Raman spectra indicate the evidence of crystallization of nc-C after annealed at 600 degree celcius by the sharp peak at 1565 cm-1 in graphite (sp2), while no peak of diamond (sp3) could be seen at 1333 cm-1. The AFM images showed the nc-C dots controlled with diameter of 100 nm, 200 nm and 300 nm, respectively. The above results revealed that the nc-C dots had sufficiently stick onto SiO2 films. The characteristic of the OTFTs operated at negative gate bias shows the p-channel enhancement behavior, and shows the most saturation behavior.|
|Description: ||Link to publisher's homepage at http://scitation.aip.org/|
|Appears in Collections:||Conference Papers|
Uda Hashim, Prof. Dr.
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