|Publication number||US3840409 A|
|Publication date||8 Oct 1974|
|Filing date||8 May 1972|
|Priority date||16 Mar 1970|
|Publication number||US 3840409 A, US 3840409A, US-A-3840409, US3840409 A, US3840409A|
|Export Citation||BiBTeX, EndNote, RefMan|
|Referenced by (8), Classifications (32)|
|External Links: USPTO, USPTO Assignment, Espacenet|
United States Patent [1 1 Ashar Oct. 8, 1974 INSULATING LAYER PEDESTAL TRANSISTOR DEVICE AND PROCESS  Inventor: Kanu G. Ashar, Wappingers Falls,
 Assignee: International Business Machines Corporation, Armonk, NY.
22 Filed: May 8,1972
21 Appl. No.: 251,517
Related US. Application Data  Division of Ser. No. 19,562, March 16, 1970,
 US. Cl l48/l.5, 148/175, 147/187, 317/235  Int. Cl. H011 7/54  Field of Search 148/1.5, 175, 187; 317/235  References Cited UNITED STATES PATENTS 3,268,374 8/1966 Anderson 148/175 3,312,881 4/1967 Yu 317/235 3,494,809 2/1970 Ross l48/l75 3,574,009 4/1971 Chizinsky et a1.
3,597,667 8/1971 Horn 148/187 X 3,666,548 5/1972 Brack et a1. l48/1 5 UX 3,677,837 7/1972 Ashar l48/l75 3,717,515 2/1973 Ashar 148/175 Primary Examiner-L. Dewayne Rutledge Assistant ExaminerJ. M. Davis Attorney, Agent, or FirmW0lmar J. Stoffel [5 7] ABSTRACT Structures and processes of making high frequency self isolating pedestal transistors in P layer and nonself isolating pedestal transistor in N layer by employing an insulating layer formed by ion implementation to separate extrinsic collector and base region.
7 Claims, 5 Drawing Figures PATENTEDum 8 1914 3,840,409 SIQEI 10f 2 FIG. 5
Co IONS/c7113 MTENTEflnm s 1974 SHEET 2 0F 2 STEP 1 STEP 2 STEP 3 FIG. 4
STEP 4 STEP 5 DEVICE AND PROCESS A division, of application Ser. No. 19,562 filed Mar.
16, 1970, now abandoned.
BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to semiconductor devices and more particularly to a device and process for forming quent processing. Finally, the semiconductor intrinsic layer provides noother functional end other than that of reducing base to collector capacitance and may not be used for electrical isolation purposes.
SUMMARY OF THE INVENTION It is therefore, an object of the present invention to provide a self isolating epi-base pedestal in P layer or a non-self isolating diffused base pedestal in N layer device and process for making the same which possesses improved base to collector capacitance characteristics, withv the concommitant ability to withstand higher breakdown voltages.
It is another object of the present invention to provide a pedestal transistor device and process for making the same in which improved electrical characteristics are obtainable, i.e., higher switching speeds and high breakdown voltages, while simultaneously gaining electrical isolation benefits without complicating the process steps or resulting structure.
In accordance with the aforementionedobjects, the present invention provides a pedestal transistor structure and process for making the same in which an insulating layer, e.g. silicon nitride, is located between the extrinsic collector region and the base region.
The foregoing other objects, features and advantages of the present invention will be apparent from the following more particular description of the embodiments of the invention, as illustrated in the accompanying drawings:
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 illustrates an epitaxial base pedestal transistor in which the insulating layer extends only along the FIG. 4 illustrates the successive process steps employed to fabricate the structure of the present invention for a diffused base pedestal transistor;
FIG. 5 illustrates graphically how the depth andposition of the ion implanted layer may be controlled.
BRIEF DESCRIPTION OF THE PREFERRED EMBODIMENTS;
FIG. 1 discloses one embodiment of a monolithic epitaxial base pedestal transistor having improved operating characteristics. The monolithic circuit included a P- substrate 10 and an epitaxial upper layer 11 in which has been formed a pedestal transistor. The pedestal transistor comprises an internal portion which is located between the lines 12 and 14. The actual transistor action occurs in the internal portion of the transistor. The portion of the transistor which is external to the lines 12 and 14 is designated the extrinsic portion of the transistor. Accordingly, the pedestal transistor further comprises N+ type conductivity extrinsic subcollector portions 13 and P type extrinsic base regions 16. The internal portion of the transistor comprises an N+ type'internal pedestal collector region 18, Ptype internal base region 20, and N type internal emitter region 22. An insulating layerf23, such as silicon nitride, is located between the extrinsic collector and base regions 13 and 16, respectively. In the epitaxial base type transistor of FIG. 1, N conductivity type diffusion regions 26 serve as a reach-through contact region for the subcollector regions 13 as well as completing the N side of the PN junction which electrically isolates the pedestal transistor from other devices (not shown) formed on the substrate 10.
FIG. 2 is a slight modification of the embodiment shown in FIG. 1 and like numerals are employed to indicate like elements. However, in the structure of FIG. 2, the insulating layer formerly shown as 23 is now extended so as to include horizontal portions 30 and vertical portions 32, which extend to the upper surfaceof the epitaxial layer 11. The vertical portions 32 further reduce the capacitance art they extrinsic vertical base to collector junction. In this embodiment the surrounding N diffusion region for isolation is unnecessary since the insulating layer 32 provides complete isolationjThe N diffused region 27 functions only to provide a low resistance contact to subcollector 13. Moreover, the base and collector regions separated by the insulating layer 32 can be subjected to much higher voltages without breaking down. Semiconductor power devices require this characteristic.
In FIG. 3, the embodiment of FIG. 2 is further modified to include an additional electrical isolation envetary type devices, i.e., NPN and PNP, to be fabricated on the same substrate. The monolithic circuit comprises a substrate 36 and an epitaxial layer 38. By way of example, a NPN pedestal transistor 40 and a PNP transistor 42 are formed within the substrate and epitaxial region 36 and 38. As previously described, the pedestal transistor 40 comprises an insulating layer 44 which separates the extrinsic collector to base regions. Additionally, one side of the layer 44 is extended to form an isolation envelope 46 so as to completely encircle or surround the pedestal NPN transistor 40. Similarly, insulating layer 48'separates the base-collector junction of PNP transistor 42 and the extension thereof forms isolation envelope 50 for electrically isolating its attendant device. The insulating layers and isolation envelopes are illustratively described as being silicon to collector regions? The presence of a dielectric layer eliminates any'undesirable outdiffusions during subsequent processing, thus allowing better'control. An insulating layer also eliminates leakage currents normally prevalent in PN junctions. This feature allowslmore complicated structures to be more readily fabricated, such as, inverted (collector on top) devices and low current devices for use in memory switching applications.
FIG. 4 illustrates the successive steps required to fabricate an N-epitaxial type pedestal transistor having an insulating layer located between the extrinsic base to collector junction. Again, the process steps for forming the insulating layer are applicable to an epitaxial base structure. In step 1, a P- starting substrate wafer 56 is provided. Next, a buried N+ subcollector region 58 is formed in the substrate using conventional diffusion techniques. Then,1an N- epitaxial layer 60 is grown over the substrate 56. A mask62 having selective openings 64 and 66 is then positioned on theupper surface of the epitaxial layer 60. The openings 64 and66 are aligned over the region where it is desired to form a.
buried insulating layerLl-Iighenergy ions (mev),schematically shown at 68, are introduced by ion implantation techniques through the mask opening 64 and66 in order to form a buried insulating layer 70 which is positioned over the buriedsubcollector'regio n 58. Implantation of nitrogen ions at these high energies is known to'create insulating layer of silicon nitride. r
The concentration and'the position of the insulating layer 70 is controlled in accordance with known principles of ion implantation illustrated in the plot in FIG. '5. The principles of anion implantation process suitable to the present invention are described in US. Pat. No. 3,666,548. Bracket al, assigned to the assignee of the present application. Fromthe curve in FIG. 5, it is readily apparent that the energy content of the source material determines the depth at which the insulating layer is ultimately located.
During further processing, an N reach through contact region 74 is diffused into the upper epitaxial region to provide a low resistance contact to the N+ subcollector layer 58. Finally, surrounding P region 76 and 78 are diffused into the upper epitaxial layer in order to provide electrical isolation for the pedestal transistor. Also, conventional diffusion steps are employed to form base region 79 and emitter region 80. During the processing steps illustrated in step 5, a portion of the subcollector region 58 diffuses through the opening 71 in the insulating layer 70 so as to form an internal collector pedestalreg'ion 77, which into ex-.
tends towards the diffused emitter region 80. The insulating layer 70, in addition to providing the structural advantages previously mentioned, also prevents undesirable outdiffusion from the buried subcollector region into the epitaxial layer during the thermal cycle time required for the process steps depicted in Step5. Also,
it is significant to note that the internal or active part of the transistor is excluded from the high energy ion bombardment which may sometimes cause strains to be set up in the semiconductor material.
In the pedestal structures illustrated in FIGS. 2 and 3, there is shown insulating layers having vertical portions. The vertical portions can be fabricated using an ion implantation process which uses a segmented mask process. Also, the vertical sides can be fabricated simultaneously with the formation of the hori ontal walls by employing a graded mask process as disclosed in US. Pat. No. 3,666,548. 1 1
Finally, although well known diffusion process steps are combined with the ion implantation process for form the insulating layer in the preferred embodiments. it is possible to form the entire monolithic circuit by ion implantation techniques and thus avoid diffusion processes.
While the invention has been particularly shown and described with reference to the preferred embodiments thereof, it will be understood by those skilled in the arts that the foregoing and other changes in form and detail may be made therein without departing from the spirit and scope of the invention.
What is claimed'is:
l. A method for fabricating a pedestal transistor in monolithic form comprising the steps of:
a. providing a substrate;
b. introducing an impurity into the substrate to form an extrinsic buried subcollector region;
c. forming an epitaxial layer over the substrate;
d. introducing an amorphous insulating layer into the epitaxial layer, the insulating layer being positioned over the extrinsic buried subcollector region;
e. forming a base and emitter region; and
f. treating the substrate and epitaxial layer so as to form-a pedestal internal collector region by allowing the impurities in the subcollector region to extend upward into the expitaxial layer so as to define an internal pedestal collector region.
2. A method for fabricating a pedestal transistor in monolithic form as in'claim l'wherein:
a. the insulating layer is introduced into the epitaxial N layer by ion implantation. l
3. A method forifabricating a pedestal transistor in monolithic form as in claim 2 wherein:-
a. a base region is formed by introducing an impurity into the 'expitaxial region.
4. A method for forming a pedestal ,transistor in monolithic form comprising the steps of claim 2 and the extrinsic buried sub-collector'region' including upwardly extending sidewalls that extend to the surface of the epitaxial layer.
6. The method for fabricating a pedestal transistor as in claim 5 wherein a second amorphous layer is introduced into the epitaxial layer, the layer being posi tioned beneath said buried sub-collector in said substrate.
7. The method for fabricating a pedestal transistor as in claim 6 wherein said second insulating layer includ-
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US3956033 *||4 Dec 1974||11 May 1976||Motorola, Inc.||Method of fabricating an integrated semiconductor transistor structure with epitaxial contact to the buried sub-collector|
|US4082571 *||9 Jan 1976||4 Apr 1978||Siemens Aktiengesellschaft||Process for suppressing parasitic components utilizing ion implantation prior to epitaxial deposition|
|US4241359 *||2 Mar 1978||23 Dec 1980||Nippon Telegraph And Telephone Public Corporation||Semiconductor device having buried insulating layer|
|US4252581 *||1 Oct 1979||24 Feb 1981||International Business Machines Corporation||Selective epitaxy method for making filamentary pedestal transistor|
|US4269636 *||29 Dec 1978||26 May 1981||Harris Corporation||Method of fabricating self-aligned bipolar transistor process and device utilizing etching and self-aligned masking|
|US4834809 *||9 Sep 1987||30 May 1989||Sharp Kabushiki Kaisha||Three dimensional semiconductor on insulator substrate|
|US5807780 *||5 Jun 1995||15 Sep 1998||Harris Corporation||High frequency analog transistors method of fabrication and circuit implementation|
|US5895252 *||2 Nov 1995||20 Apr 1999||United Microelectronics Corporation||Field oxidation by implanted oxygen (FIMOX)|
|U.S. Classification||438/349, 148/DIG.370, 438/423, 257/E29.2, 257/E29.35, 148/DIG.850, 257/526, 257/525, 257/E27.57, 257/552, 148/DIG.145, 438/355, 257/517, 438/353|
|International Classification||H01L27/082, H01L27/00, H01L29/06, H01L29/08, H01L21/00|
|Cooperative Classification||H01L27/00, H01L27/0826, Y10S148/037, Y10S148/145, H01L29/0649, H01L29/0826, H01L21/00, Y10S148/085|
|European Classification||H01L27/00, H01L21/00, H01L27/082V4, H01L29/08C2, H01L29/06B3C|