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|United States Patent||4,199,384|
|Hsu||April 22, 1980|
A method of making a monolithic semiconductor-on-insulator device which includes silicon islands in spaced relation on the surface of an insulating substrate includes the steps of filling the spaces between the islands with a passivating material by first depositing a layer of a semi-insulating material on the surface of the substrate and extending between adjacent islands into contiguous relation with the side surfaces thereof and then depositing a layer of insulating material on the layer of semi-insulating material. The combined thicknesses of the layers of semi-insulating and insulating material is substantially the same as the thickness of the silicon islands so that the resulting device has a substantially planar surface.
|Inventors:||Hsu; Sheng T. (Lawrenceville, NJ)|
|Filed:||January 29, 1979|
|Current U.S. Class:||438/403 ; 148/DIG.106; 148/DIG.122; 148/DIG.150; 148/DIG.43; 257/507; 257/523; 257/E21.266; 257/E21.545; 257/E21.704; 427/255.37; 427/255.7; 438/412|
|Current International Class:||H01L 21/762 (20060101); H01L 21/70 (20060101); H01L 21/02 (20060101); H01L 21/314 (20060101); H01L 21/86 (20060101); H01L 021/205 (); H01L 021/84 (); H01L 029/04 ()|
|Field of Search:||148/1.5,174,175,187 427/85,86,93,248B,248C,248J 156/648,649,653,657,662 357/4,52,54,59|
|3971061||July 1976||Matsushita et al.|
|4014037||March 1977||Matsushita et al.|
|4086613||April 1978||Biet et al.|
Capell et al., "Processing . . . C-MOS on Sapphire . . . ," Electronics, May 26, 1977, pp. 99-105. .
Tarng, M. L., "Carrier Transport . . . Polycrystalline-Silicon Films," J. Appl. Phys., vol. 49 (7), Jul. 1978, pp. 4069-4075. .
Hamasaki et al., "Crystallographic . . . Polycrystalline Silicon . . . ," Ibid., vol. 49 (7), Jul. 1978, pp. 3987-3992. .
Hamasaki et al., "Electronic Properties . . . Polycrystalline-Silicon . . . ," Solid State Communications, vol. 21, 1977, pp. 591-593. .
Matsushita et al., "Semi-Insulating Polycrystalline-Silicon . . . ," Proc. 7th Conf. Solid-State Devices, Tokyo, 1975, Jap. J. Appl. Phys., vol. 15, 1976, pp. 35-40. .
Mochizvki et al., "Semi-Insulating Polycrystalline Silicon . . . ," Ibid., vol. 15, 1976, pp. 41-48. .
Cullen et al., Editors, Heteroepitaxial Semiconductors for Electronic Devices, Textbook, Springer-Verlag, N.Y., Berlin, Chapter 2, pp. 64-74..