|Publication number||US6072178 A|
|Application number||US 09/014,384|
|Publication date||6 Jun 2000|
|Filing date||27 Jan 1998|
|Priority date||29 Jan 1997|
|Also published as||DE19801770A1, DE19801770B4|
|Publication number||014384, 09014384, US 6072178 A, US 6072178A, US-A-6072178, US6072178 A, US6072178A|
|Original Assignee||Hitachi, Ltd.|
|Export Citation||BiBTeX, EndNote, RefMan|
|Patent Citations (9), Referenced by (58), Classifications (12), Legal Events (4)|
|External Links: USPTO, USPTO Assignment, Espacenet|
1. Field of the Invention
This invention relates to a sample analyzing apparatus and more particularly to such a sample analyzing apparatus as a scanning electron microscope (referred to as "SEM") equipped with energy diffusion type X-ray analyzer (referred to as "EDX") and a laser mass spectrometer.
2. Description of the Related Art
A typical application field of the present invention is semiconductor production. In semiconductor production, the particle on wafer is one of the largest causes for determining product yield. To make a countermeasure for reduction of adhering particles and carry out it, it is necessary to find a generation source of the particles To find out the generation source of the particles, obtaining information of particle composition is an effective weapon. For the particle composition analysis, SEMs with Energy Dispersive X-ray Spectroscopy analysis capability has been widely used. When the composition analysis on the particle on the wafer is carried out by SEMs with Energy Dispersive X-ray Spectroscopy analysis capability, for example, following processes are carried out.
A wafer to be measured taken out of a wafer cassette is pre-aligned with reference to an orientation flat or notch of the wafer. The pre-alignment is an operation of aligning a crystal direction of the wafer with a traveling direction of the XY stage. After the pre-alignment is performed, the wafer is carried to the XY stage in a sample chamber kept in vacuum condition and mounted thereon. The wafer mounted on the XY stage is aligned by means of an optical microscope mounted on a top face of the sample chamber. The alignment is an operation for correction between the coordinate systems of a pattern formed on the wafer and stage coordinate systems. Concretely, an optical microscope image magnified several hundreds times of the alignment pattern formed on the wafer is compared to a reference image of the alignment pattern preliminarily registered, and stage position coordinates are adjusted so that that magnified optical microscope image overlaps the reference image. After the alignment, the wafer is moved to a particle to be analyzed. After the wafer is moved to the particle position, electron beam is irradiated thereover and X-ray spectrum is formed and displayed. By observing the X-ray spectrum, an observer determines and identifies the composition of the particle with reference to knowledge and information possessed by him.
However, according to such a method, if the operator is not an expert, a standard of determining the composition becomes obscure, so that a result of identification is not reliable, and further it takes long to analyze.
It is an object of the present invention to provide a sample analyzing apparatus suitable for identifying a particle accurately, securely and rapidly regardless of knowledge and skill of the operator.
According to the present invention, there is provided a sample analyzing apparatus for generating a spectrum by analyzing a sample, which registers reference spectrums as a library; reads a registered reference spectrum; compares the read reference spectrum with the generated spectrum; and selects a reference spectrum estimated to be the same as the generated spectrum.
FIG. 1 is a basic composition of an embodiment of SEM wits Energy Dispersive X-ray Spectroscopy analysis capability as a sample analyzing apparatus according to the present invention;
FIG. 2 is a diagram showing an example of flow of analytic procedure of the present invention; and
FIG. 3 is an explanatory view about spectrum selection according to the present invention.
FIG. 1 shows a basic structure of an embodiment of the SEM with Energy Dispersive X-ray Spectroscopy analysis capability as a sample analyzing apparatus according to the present invention. Electron beam 2 emitted from an electron gun 1 is focused by a condenser lens 3 and an objective lens 4 so as to form a focal point on a plane of a wafer 5 which is a sample. The electron beam 2 is warped by a deflector 6 so as to perform two-dimensional or single dimensional scanning of the wafer surface.
On the other hand, the wafer irradiated by the electron beam 2 emits secondary electrons 7 and characteristic X-ray 14. The secondary electrons 7 are detected by a secondary electron detector 8, converted to electric signals and subjected to amplification or the like. After that processing, the electric signals are used for brightness modulation or amplitude modulation. The display 9 is scanned in synchronism with scanning of the wafer surface by the electron beam 2. In a case when the two-dimensional scanning is performed to carry out brightness modulation, a sample image (SEM image) is formed on the display. In a case when the single dimensional scanning is performed so as to carry out amplitude modulation, a line profile is formed thereon.
The characteristic X-ray 14 is detected by a semiconductor X-ray detector 15 and subjected to energy analysis. Then, X-ray spectrum is formed on the display 9. This method is called energy diffusion type X-ray analysis (referred to as "EDX").
According to the present invention, FIG. 2 shows an example of a flow of analysis procedures that are numbered from 1 to 12. A wafer 5 to be measured is taken out of a wafer cassette 10 (1). The wafer 5 is pre-aligned and at the same time, a wafer identification number formed on the wafer is read by a wafer number reader (not shown) (2). The wafer number is inherent in each wafer. Based on a read wafer number, a recipe preliminarily registered corresponding to this wafer is read out (3). The recipe determines the analysis procedure and condition of this wafer. A subsequent operation is automatically or semi-automatically carried out according to this recipe. A following description is about a case of semi-automatic operation.
After the recipe is read, the wafer 5 is carried onto a XY stage 12 in the sample chamber 11 kept in vacuum condition (4). The wafer 5 loaded on the XY stage 12 is aligned using an optical microscope 13 mounted on a top of the sample chamber 11 (5). In this alignment, an optical microscope image magnified several hundreds times of an alignment pattern formed on the wafer 5 is compared to a reference image of the alignment pattern preliminarily registered and the stage position coordinates are corrected so that the magnified optical microscope image overlaps the reference image.
After the alignment is carried out, a wafer map preliminarily registered corresponding to this wafer is read and indicated on the display (6). The wafer map indicates a position and size of the particle existing on this wafer. After the wafer map is indicated, an operator specifies a particle to be analyzed from particles shown on the wafer map (7). If the particle to be analyzed is specified, the wafer 5 to be measured is carried by the stage so that the specified particle is just below the electron beam (8). After that, scanning electron beam is irradiated over the specified particle so as to form the SEM image. The SEM image is compared to the reference SEM image preliminarily registered corresponding to the specified analysis point like in the alignment operation, and then precision positioning of the specified particle is carried out so that that SEM image overlaps the reference SEM image (9). The positioning is carried out by minute adjustment of the scanning area by the electron beam.
When the positioning of the wafer is completed, the specified particle is located almost in the center of the screen. With this condition, electron beam is irradiated over the specified particle all at once and the emitting characteristic X-ray is detected. A spectrum of the detected X-ray is displayed on the display (10). On the other hand, the detected X-ray spectrum is compared to the reference spectrum whose peak position and peak height order are registered preliminarily in a library and a reference spectrum estimated to be the same is listed up (11).
For the comparison and listing, for example, a hardware composition shown in portion A of FIG. 1 is used. Using a processor 21, a detected X-ray spectrum is overlapped with the reference spectrum for comparison (12). The detected X-ray spectrum is compared by overlapping with a reference spectrum read from a memory 22 by changing the spectrum height as shown in FIG. 3.
Listed reference spectrums are displayed on a display with their additional information. The additional information is sample condition such as material name which falls under that spectrum and names of process/equipment in which that material is used. The additional information is stored in the memory 22 together with tables of the reference spectrum, peak position and height order.
There is a case in which a plurality of spectrums estimated to be the same are listed up. By inputting the additional information of an observed wafer such as a current process name, process equipment, history and the like of the observed wafer, the number of the wafers estimated to be the same can be further narrowed down.
In a case when a plurality of spectrums estimated to be the same are listed, the observed spectrum is compared with a reference spectrum estimated to be the same. If that comparison is displayed, an operator can narrow down the same spectrums easily. As for displaying of the comparison, to facilitate comparison and determination of difference between two spectrums, color indication, for example, indicating a different portion between the two in red, is employed.
To facilitate narrowing down of the same spectrums, as additional information of the recipe, optical microscope images, focused ion beam images and various analysis data corresponding to the particle are filed. At the time of analysis, these images and analysis data can be read and displayed as reference information.
After the analysis of the specified particle is completed, the wafer map is displayed on the display again. The operator inputs analysis end, analysis result and selection result onto the specified particle in the wafer map so that they are displayed and details of the analysis result are stored in analysis database file.
An analysis of a position is completed as described above. If there is a particle left to be analyzed, a new particle is specified on the wafer map and after the specified particle position is changed, the operation shown in FIG. 2 is repeated.
The analysis work for a single wafer is completed. If there are plural wafers to be analyzed left in the wafer cassette, a next wafer is taken out of the wafer cassette and the analysis is repeated according to the steps shown in FIG. 2.
In this analysis, the operator specifies a particle, that is, an analysis point indicated on the wafer map each time during the procedure, it is permissible to employ automatic analysis of automatically proceeding to a preliminarily specified analysis point for performing analysis gradually.
In this process, after the reference spectrum estimated to be the same is selected, it is indicated with an observed spectrum so as to identify a particle, it is permissible to omit the confirmation by the simultaneous indication and automatically proceed following processing.
The reference spectrum can be registered additionally or again even during analysis procedure.
Here, as the reference spectrum, a spectrum preliminarily registered before the procedure is used. However, if an observed spectrum does not coincide with any reference spectrum so that it can be considered as a new substance or the observed spectrum is more suitable as a reference spectrum as compared to a conventional reference spectrum, the observed spectrum is added or registered to the reference spectrums. The newly registered spectrum can be used to classify subsequent analysis result even if its substance name has not been detected.
Although the case in which a single spectrum is picked up for a single particle is indicated here, it is permissible to collect a plurality of spectrums for a single particle. This corresponds to a case in which different electron beam irradiation condition or different measurement position data are required.
For such a sample which takes long until charge-up is saturated when charged particle beam, such as electron beam or ion beam is used, after irradiation with the charged particle beam for a predetermined time interval, its observed image should be obtained.
As for the simultaneous indication of the observed spectrum and reference spectrum, it is permissible to display them in divided area of the same display or to indicate them on separate displays.
There has been indicated such a method in which, after a wafer is aligned with a low magnification luminous image, its position is determined based on a high magnification SEM image. However, it is also permissible to provide with a function of detecting a specified particle directly according to the high magnification SEM image, and if there is no specified particle found, searching for any other particle in the neighborhood.
Although the XY stage is used here, if XYT (T means a tilt) is used instead of the XY stage, analysis of particles adhering to a pattern wall is facilitated.
Although a patterned wafer is considered as an observation object here, it is also possible to analyze a particle adhering to a bare wafer. In this case, for the positioning of a particle to be analyzed, the neighborhood search method is used. The analysis object is not restricted to any particle, but may be fault such as pattern defect.
Further, the analysis object is not restricted to the semiconductor wafer. The sample is not restricted to any particular type, but permitted to be wafers for pick-up device or display device. Other configurations than the wafer are also permitted.
Although spectrum formation by electron beam is used here, it is permissible to use physical analytic means by ion beam or optical beam and it is also permissible to use chemical analytic means such as atomic absorption spectroscopy and mass spectrometric analysis.
Although scanning image is used for alignment, it is permissible to use an image formed by focusing optical system.
According to the embodiment of the present invention as evident from the above description, the particle can be identified accurately, securely and rapidly regardless of knowledge and skill of the operator.
Further, by using the additional information such as sample condition, it is possible not only to identify substance but also detect an occurrence place, time and the like easily and rapidly.
The present invention is capable of providing a sample analyzing apparatus suitable for identifying substance accurately, securely and rapidly, regardless of knowledge and skill of the operator.
|Cited Patent||Filing date||Publication date||Applicant||Title|
|US3812288 *||21 Nov 1972||21 May 1974||Edax Int Inc||Television display system|
|US4620284 *||29 Dec 1983||28 Oct 1986||Uop Inc.||Qualitative and quantitative analysis using Raman scattering|
|US5142149 *||16 Jul 1990||25 Aug 1992||Hitachi, Ltd.||Electron microscope|
|US5453613 *||21 Oct 1994||26 Sep 1995||Hewlett Packard Company||Mass spectra interpretation system including spectra extraction|
|US5483065 *||12 Oct 1994||9 Jan 1996||Seiko Instruments Inc.||Electron beam microanalyzer|
|US5596195 *||15 Sep 1995||21 Jan 1997||Horiba, Ltd.||Method and apparatus for measuring the distribution of elements contained in sample|
|US5659172 *||23 Feb 1996||19 Aug 1997||Opal Technologies Ltd.||Reliable defect detection using multiple perspective scanning electron microscope images|
|US5866903 *||9 May 1997||2 Feb 1999||Horiba, Ltd.||Equipment and process for quantitative x-ray analysis and medium with quantitative x-ray analysis program recorded|
|US5945833 *||27 Nov 1996||31 Aug 1999||University Of Massachusetts||Method for testing semiconductor devices which measures internal potential distribution, internal electric field, and internal doping profile|
|Citing Patent||Filing date||Publication date||Applicant||Title|
|US6252412 *||8 Jan 1999||26 Jun 2001||Schlumberger Technologies, Inc.||Method of detecting defects in patterned substrates|
|US6407386 *||23 Feb 1999||18 Jun 2002||Applied Materials, Inc.||System and method for automatic analysis of defect material on semiconductors|
|US6476389 *||10 Mar 2000||5 Nov 2002||Fuji Photo Optical Co., Ltd.||X-ray analyzer having an absorption current calculating section|
|US6488405 *||8 Mar 2000||3 Dec 2002||Advanced Micro Devices, Inc.||Flip chip defect analysis using liquid crystal|
|US6509750||30 Apr 2001||21 Jan 2003||Applied Materials, Inc.||Apparatus for detecting defects in patterned substrates|
|US6555816 *||7 Sep 2000||29 Apr 2003||Hitachi, Ltd.||Scanning electron microscope and sample observation method using the same|
|US6633831||20 Sep 2001||14 Oct 2003||Kla Tencor Technologies||Methods and systems for determining a critical dimension and a thin film characteristic of a specimen|
|US6673637||20 Sep 2001||6 Jan 2004||Kla-Tencor Technologies||Methods and systems for determining a presence of macro defects and overlay of a specimen|
|US6694284||20 Sep 2001||17 Feb 2004||Kla-Tencor Technologies Corp.||Methods and systems for determining at least four properties of a specimen|
|US6740877||4 Apr 2003||25 May 2004||Hitachi, Ltd.||Scanning electron microscope and sample observation method using the same|
|US6774362 *||27 Sep 2002||10 Aug 2004||Jeol Ltd.||Analytical method for electron microscopy|
|US6782337||20 Sep 2001||24 Aug 2004||Kla-Tencor Technologies Corp.||Methods and systems for determining a critical dimension an a presence of defects on a specimen|
|US6806951||20 Sep 2001||19 Oct 2004||Kla-Tencor Technologies Corp.||Methods and systems for determining at least one characteristic of defects on at least two sides of a specimen|
|US6812045||20 Sep 2001||2 Nov 2004||Kla-Tencor, Inc.||Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation|
|US6818459||22 Oct 2003||16 Nov 2004||Kla-Tencor Technologies Corp.||Methods and systems for determining a presence of macro defects and overlay of a specimen|
|US6829559||20 Sep 2001||7 Dec 2004||K.L.A.-Tencor Technologies||Methods and systems for determining a presence of macro and micro defects on a specimen|
|US6855930 *||27 Sep 2002||15 Feb 2005||Hitachi, Ltd.||Defect inspection apparatus and defect inspection method|
|US6855931||2 Apr 2004||15 Feb 2005||Hitachi, Ltd.||Scanning electron microscope and sample observation method using the same|
|US6914441||29 Apr 2002||5 Jul 2005||Applied Materials, Inc.||Detection of defects in patterned substrates|
|US6989542||6 May 2004||24 Jan 2006||Yeda Research And Development Co., Ltd.||Device and method for the examination of samples in a non vacuum environment using a scanning electron microscope|
|US6992300||27 May 2003||31 Jan 2006||Yeda Research And Development Co., Ltd||Device and method for the examination of samples in a non-vacuum environment using a scanning electron microscope|
|US7132652 *||25 Mar 2004||7 Nov 2006||Kla-Tencor Technologies Corporation||Automatic classification of defects using pattern recognition applied to X-ray spectra|
|US7148073||15 Mar 2005||12 Dec 2006||Kla-Tencor Technologies Corp.||Methods and systems for preparing a copper containing substrate for analysis|
|US7205555||24 Jan 2005||17 Apr 2007||Hitachi, Ltd.||Defect inspection apparatus and defect inspection method|
|US7230242||1 Jun 2003||12 Jun 2007||Quantomix Ltd||Methods for SEM inspection of fluid containing samples|
|US7253418||19 Aug 2005||7 Aug 2007||Yeda Research And Development Co. Ltd.||Device and method for the examination of samples in a non vacuum environment using a scanning electron microscope|
|US7304313||1 Jun 2003||4 Dec 2007||Quantomix Ltd.||Low-pressure chamber for scanning electron microscopy in a wet environment|
|US7365321||22 Mar 2005||29 Apr 2008||Kla-Tencor Technologies Corp.||Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis|
|US7394067||20 Jul 2005||1 Jul 2008||Kla-Tencor Technologies Corp.||Systems and methods for reducing alteration of a specimen during analysis for charged particle based and other measurement systems|
|US7528614||22 Dec 2004||5 May 2009||Applied Materials, Inc.||Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam|
|US7631286||30 Dec 2005||8 Dec 2009||Wafertech Llc||Automated metrology recipe generation|
|US7751046||6 Jul 2010||Kla-Tencor Technologies Corp.||Methods and systems for determining a critical dimension and overlay of a specimen|
|US8179530||5 Jul 2010||15 May 2012||Kla-Tencor Technologies Corp.||Methods and systems for determining a critical dimension and overlay of a specimen|
|US8502979||9 May 2012||6 Aug 2013||Kla-Tencor Technologies Corp.||Methods and systems for determining a critical dimension and overlay of a specimen|
|US8664595||28 Jun 2012||4 Mar 2014||Fei Company||Cluster analysis of unknowns in SEM-EDS dataset|
|US8765496||28 Apr 2008||1 Jul 2014||Kla-Tencor Technologies Corp.||Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis|
|US8937282||26 Oct 2012||20 Jan 2015||Fei Company||Mineral identification using mineral definitions including variability|
|US9048067||26 Oct 2012||2 Jun 2015||Fei Company||Mineral identification using sequential decomposition into elements from mineral definitions|
|US9091635||26 Oct 2012||28 Jul 2015||Fei Company||Mineral identification using mineral definitions having compositional ranges|
|US9188555||30 Jul 2012||17 Nov 2015||Fei Company||Automated EDS standards calibration|
|US9194829||28 Dec 2012||24 Nov 2015||Fei Company||Process for performing automated mineralogy|
|US20030089851 *||27 Sep 2002||15 May 2003||Jeol Ltd.||Analytical method for electron microscopy|
|US20030118149 *||27 Sep 2002||26 Jun 2003||Hitachi, Ltd.||Defect inspection apparatus and defect inspection method|
|US20030189172 *||4 Apr 2003||9 Oct 2003||Hitachi, Ltd.||Scanning electron microscope and sample observation method using the same|
|US20040046120 *||27 May 2003||11 Mar 2004||Yeda Research And Development Co., Ltd.||Device and method for the examination of samples in a non-vacuum environment using a scanning electron microscope|
|US20040183016 *||2 Apr 2004||23 Sep 2004||Hitachi, Ltd.||Scanning electron microscope and sample observation method using the same|
|US20040217297 *||6 May 2004||4 Nov 2004||Yeda Research And Development Co. Ltd.||Device and method for the examination of samples in a non vacuum environment using a scanning electron microscope|
|US20050121612 *||24 Jan 2005||9 Jun 2005||Hitachi, Ltd.||Defect inspection apparatus and defect inspection method|
|US20050221229 *||22 Mar 2005||6 Oct 2005||Mehran Nasser-Ghodsi||Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis|
|US20050244821 *||16 Aug 2001||3 Nov 2005||Ory Zik||Method of identification and quantification of biological molecules and apparatus therefore|
|US20050279938 *||1 Jun 2003||22 Dec 2005||Yeda Research And Development Co. Ltd.||Low-pressure chamber for scanning electron microscopy in a wet environment|
|US20060033038 *||19 Aug 2005||16 Feb 2006||Yeda Research And Development Co. Ltd.|
|US20060134810 *||22 Dec 2004||22 Jun 2006||Applied Materials Israel Ltd||Apparatus and method for voltage contrast analysis of a wafer using a titled pre-charging beam|
|US20070125947 *||10 Dec 2003||7 Jun 2007||David Sprinzak||Sample enclosure for a scanning electron microscope and methods of use thereof|
|US20070156275 *||30 Dec 2005||5 Jul 2007||Daniel Piper||Automated metrology recipe generation|
|US20080264905 *||28 Apr 2008||30 Oct 2008||Mehran Nasser-Ghodsi|
|US20090323895 *||30 May 2007||31 Dec 2009||Eads Deutschland Gmbh||Method and Apparatus for Treating Workpieces|
|US20150122992 *||6 Nov 2013||7 May 2015||Fei Company||Sub-pixel Analysis and Display of Fine Grained Mineral Samples|
|U.S. Classification||250/310, 250/399, 250/307|
|International Classification||G01J3/28, G01N23/225, G01N27/62, G01J3/02, G01B15/00|
|Cooperative Classification||G01N23/2251, G01B15/00|
|European Classification||G01N23/225B, G01B15/00|
|27 Jan 1998||AS||Assignment|
Owner name: HITACHI, LTD., JAPAN
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MIZUNO, FUMIO;REEL/FRAME:008952/0224
Effective date: 19980116
|30 Sep 2003||FPAY||Fee payment|
Year of fee payment: 4
|27 Sep 2007||FPAY||Fee payment|
Year of fee payment: 8
|9 Nov 2011||FPAY||Fee payment|
Year of fee payment: 12