GaAs interfacial self-cleaning by atomic layer deposition
Hinkle, C. L. and Sonnet, A. M. and Vogel, E. M. and McDonnell, Stephen and Hughes, Greg and Milojevic, M. and Lee, B. and Aguirre-Tostado, F. S. and Choi, K. J. and Kim, H. C. and Kim, J. and Wallace, R. M. (2008) GaAs interfacial self-cleaning by atomic layer deposition. Applied Physics Letters, 92 (7). 071901-1. ISSN 0003-6951
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The reduction and removal of surface oxides from GaAs substrates by atomic layer deposition (ALD) of Al2O3 and HfO2 are studied using in situ monochromatic x-ray photoelectron spectroscopy. Using the combination of in situ deposition and analysis techniques, the interfacial "self-cleaning" is shown to be oxidation state dependent as well as metal organic precursor dependent. Thermodynamics, charge balance, and oxygen coordination drive the removal of certain species of surface oxides while allowing others to remain. These factors suggest proper selection of surface treatments and ALD precursors can result in selective interfacial bonding arrangements.
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