Wang, M. W. and Collins, D. A. and McGill, T. C. and Grant, R. W. (1993) X-ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface. Journal of Vacuum Science and Technology B, 11 (4). pp. 1418-1422. ISSN 1071-1023. http://resolver.caltech.edu/CaltechAUTHORS:20120308-070903192
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X-ray photoelectron spectroscopy has been used to measure levels of anion cross-incorporation and to study interface formation for the mixed anion GaSb/lnAs heterojunction. Anion cross-incorporation was measured in 20 Å thick GaSb layers grown on lnAs, and 20 Å thick InAs layers grown on GaSb for cracked and uncracked sources. It was found that significantly less anion cross-incorporation occurs in structures grown with cracked sources. Interface formation was investigated by studying Sb soaks of InAs surfaces and As soaks of GaSb surfaces as a function of cracker power and soak time. Exchange of the group V surface atoms was found to be an increasing function of both cracker power and soak time. We find that further optimization of current growth parameters may be possible by modifying the soak time used at interfaces.
|Additional Information:||© 1993 American Vacuum Society. Received 25 January 1993; accepted 24 March 1993. The authors gratefully acknowledge helpful discussions with D. H. Chow. This work was supported in part by the Office of Naval Research under Contract Nos. N00014-90-J-1742 and N00014-89-C-0203, and the Air Force Office of Scientific Research under Contract No. AFOSR-90-0239.|
|Classification Code:||PACS: 81.15.Hi, 73.20.At|
|Official Citation:||X‐ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface M. W. Wang, D. A. Collins, T. C. McGill, and R. W. Grant J. Vac. Sci. Technol. B 11, 1418 (1993); http://dx.doi.org/10.1116/1.586952|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Ruth Sustaita|
|Deposited On:||12 Mar 2012 21:20|
|Last Modified:||26 Dec 2012 14:55|
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