Houston, TXMimix Broadband, Inc. announced a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) differentially-fed doubler with RF buffer amplifier that can be used to drive fundamental mixer devices. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this doubler converts input signals in the 10 to 20 GHz frequency range to output signals in the 20 to 40 GHz frequency range, and has +13 dBm output drive at +0 dBm input.
The doubler, identified as 40DBL0458, is well suited to drive highly integrated receivers, and is appropriate for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), and SATCOM applications.
"By using an active balun and full-wave balanced doubler, followed by a wideband distributed buffer amplifier, this circuit achieves more than an octave of bandwidth with good fundamental suppression," stated Dr. Jim Harvey, CTO of Mimix Broadband, Inc. "It provides over 12 dB conversion gain, with output power levels sufficient to drive fundamental mixers or power amplifiers at 16 to 46 GHz."
The company performs 100% on-wafer RF, DC, and output power testing on the device, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.
Samples and production quantities are available now. Click here for the 40DBL0458data sheet.
+1 281-988-4600, www. mimixbroadband.com