We report an InGaP/AlInGaP/GaAs microchip vertical-external-cavity surface emitting laser operating directly at red wavelengths and demonstrate its potential for array-format operation. Optical pumping with up to 3.3W at 532nm produced a maximum output power of 330mW at 675nm, in a single circularly-symmetric beam with M2<2. Simultaneous pumping with three separate input beams, generated using a diffractive optical element, achieved lasing from three discrete areas of the same chip. Output power of ~95mW per beam was obtained from this 3�?1 array, each beam having a Gaussian intensity profile with M2<1.2. In a further development, a spatial light modulator allowed computer control over the orientation and separation of the pump beams, and hence dynamic control over the configuration of the VECSEL array.
© 2005 Optical Society of AmericaPDF Article