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A simple test structure is proposed for accurately extracting the substrate network parameters of a radio-frequency MOSFET with deep n-well implantation from two-port measurements. The test structure with the source, drain, and gate terminals all connected together is used as port one, while the bulk terminal as port two, making the substrate network distinctly accessible in measurements. A methodology is developed to directly extract the parameters for the substrate network from the measured data. The method is further verified by the excellent match between the measured and simulated output admittances on the extracted parameters for a 16-finger nMOSFET of common-source configuration operated in different bias conditions.