Image Number 8 for United States Patent #RE34026.
A CMOS sense amplifier for a dynamic read/write memory employs a latch circuit with cross-coupled N-channel transistors and cross-coupled P-channel transistors, returned to the voltage supply and ground through P and N channel transistors selectively activated by sense clocks. Differential inputs of the sense amplifier are connected to the bit lines. The N-channel transistors are employed for initial sensing, and then both N-channel and P-channel transistors in sequential order for amplification and restoring the I-level. This results in better balance, and smaller N and P channel latch transistors may be used, saving area, saving power and increasing speed.