DSpace at IIT Bombay >
IITB Publications >
Please use this identifier to cite or link to this item:
|Title: ||Formation and growth of porous silicon|
|Authors: ||VADJIKAR, RM|
|Keywords: ||diffusion-limited aggregation|
|Issue Date: ||1997|
|Publisher: ||PERGAMON-ELSEVIER SCIENCE LTD|
|Citation: ||NANOSTRUCTURED MATERIALS, 8(4), 507-520|
|Abstract: ||The conformal hullfinite diffusion length model (FDL) simulates pore formation and growth in silicon by launching particles from an isoconcentration profile. Several features of the aggregation patterns generated by this model resemble experimentally observed morphology of porous silicon. In this paper we consider silicon atom dissolution by a two particle aggregation algorithm. The probabilities of site occupation have been assigned based on the local electric field. The release probability of particles has been considered to be proportional to the electric field. The incorporation of these factors generates aggregation patterns which are similar to those generated by other similar models. We suggest that such modifications generate aggregation patterns that are representative of porous silicon morphology. (C) 1997 Acta Metallurgica Inc.|
|Appears in Collections:||Article|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.