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|Title: ||Surface properties of electrodeposited a-Si:C:H:F thin films by x-ray photoelectron spectroscopy|
|Authors: ||RAM, P|
|Keywords: ||amorphous hydrogenated silicon|
|Issue Date: ||1997|
|Publisher: ||CHAPMAN HALL LTD|
|Citation: ||JOURNAL OF MATERIALS SCIENCE, 32(23), 6305-6310|
|Abstract: ||Surface properties of amorphous silicon thin films containing hydrogen, flourine and carbon obtained from hydrofluosilicic acid and ethylene glycol using the electrodeposition method are reported as a function of current density and deposition time. The Si2p core level X-ray photoelectron spectra exhibited binding-energy shifts corresponding to SiFx (x = 1-4), SiC, Si-H and Si-O-2 type bond formations. The shifts in 1s spectra of fluorine, carbon x and oxygen confirmed the presence of fluorine, carbon and oxygen in bonded form. Theoretical binding-energy shifts calculated from Pauling's electronegativity values were in close agreement with the measured values. The relative concentration values of C/Si estimated in these films were found to be larger than those of F/Si and O/Si. The results were corroborated with infrared spectroscopy and scanning electron microscopy data.|
|Appears in Collections:||Article|
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