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|Title: ||Depth profile analysis of porous Si film by ERDA using a ΔE - E detector telescope|
|Authors: ||Avasthi, D K|
Hui, S K
Subramaniyam, E T
Mehta, B R
|Keywords: ||depth profiling|
E- E detector telescope.
|Issue Date: ||1996|
|Citation: ||Vacuum, 47(9), 1061-1064|
|Abstract: ||A complete analytical study as well as depth profiling of the constituent elements of a orous Si layer have been carried out by elastic recoil detection analysis using 700 MeVAg ions and a AE- E detector telescope. Quantitative estimates of elements H, C, N, 0, F, Mg and Si in a porous Si film have been made. The analysis
of data indicates that the lowest detection limit of the technique is 8x ‘10p4 at% with an inaccuracy of 15%.|
|Appears in Collections:||Physics|
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