Structure of GaSb layers grown on (111) GaAs surfaces
Babkevich, A.Y., Cowley, R.A., Mason, N.J., Shields, P.A., Stadelman, T., Brown, S., Mannix, D. and Paul, D., 2004. Structure of GaSb layers grown on (111) GaAs surfaces. Journal of Applied Physics, 96 (5), pp. 3012-3019.
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The structure of GaSb layers grown on (111) GaAs substrate were studied using x-ray diffraction. The GaSb layers were grown by metal-organic vapor phase epitaxy, with thicknesses of 70 Å, 160 Å and 1260 Å. The lattice mismatch between the layer and the substrate was large and most of the misfit strain was taken up by a regular network of dislocations localized at the interfaces between GaSb and GaAs. The result shows that the structure of GaAs substrate was a single fcc domain.
|Creators||Babkevich, A.Y., Cowley, R.A., Mason, N.J., Shields, P.A., Stadelman, T., Brown, S., Mannix, D. and Paul, D.|
|Departments||Faculty of Engineering & Design > Electronic & Electrical Engineering|
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