Gao, Yi Qin and Marcus, R. A. (2000) On the theory of electron transfer reactions at semiconductor/liquid interfaces. II. A free electron model. Journal of Chemical Physics, 113 (15). pp. 6351-6360. ISSN 0021-9606. http://resolver.caltech.edu/CaltechAUTHORS:GAOjcp00b
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Electron transfer reactions at semiconductor/liquid interfaces are studied using the Fermi Golden rule and a free electron model for the semiconductor and the redox molecule. Bardeen's method is adapted to calculate the coupling matrix element between the molecular and semiconductor electronic states where the effective electron mass in the semiconductor need not equal the actual electron mass. The calculated maximum electron transfer rate constants are compared with the experimental results as well as with the theoretical results obtained in Part I using tight-binding calculations. The results, which are analytic for an s-electron in the redox agent and reduced to a quadrature for pz- and dz2-electrons, add to the insight of the earlier calculations.
|Additional Information:||©2000 American Institute of Physics. (Received 10 March 2000; accepted 24 July 2000) It is a pleasure to acknowledge the support of the National Science Foundation and the Office of Naval Research. We thank Professor Nathan S. Lewis, William J. Royea, and Dr. Yuri Geogievskii for valuable discussions. We would like to dedicate this article to our esteemed colleague, Royce Murray, on the occasion of his forthcoming 65th birthday.|
|Subject Keywords:||semiconductor-insulator boundaries; charge exchange; molecular electronic states|
|Usage Policy:||No commercial reproduction, distribution, display or performance rights in this work are provided.|
|Deposited By:||Archive Administrator|
|Deposited On:||09 Mar 2006|
|Last Modified:||26 Dec 2012 08:47|
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