Modeling and Practial Verification of the Ionophore Based Chemically Modified Field Effect Transistor
M. Daniel, M. Szermer, M. Janicki and A. Napieralski
DMCS, Technical University of Lodz, PL
Keywords: CHEMFET, SEWING, BSC, VHDL-AMS
Proper CAD design of electronic microsystems oriented for environment monitoring requires accurate models of various sensors, which would be compatible with the existing behavioral simulators. In this paper the analysis of the ion sensitive transistor was performed and two models of the CHEmically Modified Field Effect Transistors (CHEMFETs) were applied to the sensor model. Two models of the membrane potential were also compared. The models were implemented in Hardware Description Language (VHDL-AMS) in order to provide the future possibility for the mixed domain, mixed signal simulation of the microsystem incorporating the sensors, operating circuit and analog to digital conversion circuits. Both models were validated by the measurements of the real structures. The most important parameters were identified as a result of parameter extraction procedure.
Nanotech 2004 Conference Technical Program Abstract