This tool version is unpublished and cannot be run. If you would like to have this version staged, you can put a request through HUB Support.
The application was originally written in Matlab by Andres Godoy at University of Granada, Spain, and later rappturized by Hyung-Seok Hahm at University of Illinois at Urbana-Champaign.
It generates both quantum mechanical and classical electrostatic simulation results in a cross section (perpendicular to the transport direction) for two dimensional (2D) Trigate structures.
2D Poisson and Schroedinger equations are self-consistenly solved for this kind of devices. The user can select the dimensions of the silicon width (WSi), height (HSi), the gate oxide thickness (Tox) and the buried oxide thickness (TBox), and the applied gate voltage (Vg).
Other important simulation conditions are
- Room temperature: 300K
- Metal Gate Work Function: 4.61(eV)
- Substrate Doping: Na=1.0e12 Nd=1.0e10
- Orientation of a plane for the oxide interface and the cross-section: 100
The current version provides the following results:
- Classical Electron Density
- Classical Potential Distribution
- Quantum Electron Density
- First 6 Wavefunction Distribution
In case you include a simulation result in your publication, please cite the tool as the following:
* Electrostatic simulation of SOI Trigates at http://www.nanohub.org by Hyung-Seok Hahm and Andres Godoy
* F.J. Garcia Ruiz, A. Godoy, F. Gamiz, C. Sampedro, and L. Donetti, “A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects” IEEE Trans. Electron Devices, vol. 54(12), pp. 3369-3377, 2007.
Hyung-Seok Hahm, University of Illinois at Urbana-Champaign
Andres Godoy at University of Granada, Spain
F.J. Garcia Ruiz, A. Godoy, F. Gamiz, C. Sampedro, and L. Donetti, “A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects” IEEE Trans. Electron Devices, vol. 54(12), pp. 3369-3377, 2007.
Cite this work
Researchers should cite this work as follows: