Radial n-i-p structure SiNW-based microcrystalline silicon thin-film solar cells on flexible stainless steel
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
Nanoscale Research Letters 2012, 7:621 doi:10.1186/1556-276X-7-621Published: 12 November 2012
Radial n-i-p structure silicon nanowire (SiNW)-based microcrystalline silicon thin-film solar cells on stainless steel foil was fabricated by plasma-enhanced chemical vapor deposition. The SiNW solar cell displays very low optical reflectance (approximately 15% on average) over a broad range of wavelengths (400 to 1,100 nm). The initial SiNW-based microcrystalline (μc-Si:H) thin-film solar cell has an open-circuit voltage of 0.37 V, short-circuit current density of 13.36 mA/cm2, fill factor of 0.3, and conversion efficiency of 1.48%. After acid treatment, the performance of the modified SiNW-based μc-Si:H thin-film solar cell has been improved remarkably with an open-circuit voltage of 0.48 V, short-circuit current density of 13.42 mA/cm2, fill factor of 0.35, and conversion efficiency of 2.25%. The external quantum efficiency measurements show that the external quantum efficiency response of SiNW solar cells is improved greatly in the wavelength range of 630 to 900 nm compared to the corresponding planar film solar cells.