Device extraction and the quality of device extraction is becoming of increasing concern for integrated circuit design flow. As circuits become more complicated with concomitant reductions in geometry, the design engineer faces the ever burgeoning demand of accurate device extraction. For technology nodes of 65nm and below approximation of extracting the device geometry drawn in the design layout polygons might not be sufficient to describe the actual electrical behavior for these devices, therefore contours from lithographic simulations need to be considered for more accurate results. Process window variations have a considerable effect on the shape of the device wafer contour, having an accurate method to extract device parameters from wafer contours would still need to know which lithographic condition to simulate. Many questions can be raised here like: Are contours that represent the best lithography conditions just enough? Is there a need to consider also process variations? How do we include them in the extraction algorithm? In this paper we first present the method of extracting the devices from layout coupled with lithographic simulations. Afterwards a complete flow for circuit time/power analysis using lithographic contours is described. Comparisons between timing results from the conventional LVS method and Litho aware method are done to show the importance of litho contours considerations.