Shashikala, MN and Sangunni, KS and Bhat, HL (1988) Ferroelectricity in DTAAP. In: Ferroelectrics Letters Section, 9 (1). pp. 19-25.Full text not available from this repository.
The results of dielectric studies of deuterated TAAP grown at different temperatures are reported. These results together with the Raman spectral data show that 100% deuteration is possible only if the crystals are grown at low temperatures. The transition temperature continuously increases with increasing deuterium content from 45°C for TAAP to ∼ 87°C for DTAAP indicating that hydrogen bonds play an important role in the ferroelectric transition of this crystal.
|Item Type:||Journal Article|
|Additional Information:||Copyright of this article belongs to Taylor and Francis Group.|
|Department/Centre:||Division of Physical & Mathematical Sciences > Physics|
|Date Deposited:||30 Aug 2010 09:47|
|Last Modified:||30 Aug 2010 09:47|
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