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|Title: ||Role of rapid thermal annealing in the formation of crystalline SiGe nanoparticles|
|Authors: ||JOSHI, KU|
|Issue Date: ||2009|
|Publisher: ||ELSEVIER SCIENCE SA|
|Citation: ||SURFACE & COATINGS TECHNOLOGY,203(17-18)2497-2500|
|Abstract: ||In the present work, we report the formation of SiGe nanoparticles embedded in SiO(2) film by atom beam sputtering method in conjunction with Rapid Thermal Annealing (RTA). Crystalline SiGe nanoparticles in the co-sputtered films are formed after rapid thermal annealing at 900 degrees C and 1000 degrees C for 1 min in N(2) gas ambient. These nanoparticles were characterized using UV-vis absorption, GXRD, FTIR and Raman measurements. UV-vis spectra show blue shift of absorption edge with the increase in annealing temperature. GXRD pattern shows that particles formed are crystalline. The average size of the nanoparticle estimated from GXRD is 15 nm to 30 nm for the films annealed at temperatures 800 degrees C and 1000 degrees C respectively. FTIR spectra show the phase separation between SiGe nanoparticles and SiO(2) matrix after RTA. Raman spectra show that SiGe phase is formed with c-Ge as core and c-SiGe as shell in the SiO(2) matrix. (C) 2009 Elsevier B.V. All rights reserved.|
|Appears in Collections:||Proceedings papers|
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