Low-energy nitrogen ion implantation of InSb
UNSPECIFIED. (2004) Low-energy nitrogen ion implantation of InSb. JOURNAL OF APPLIED PHYSICS, 96 (9). pp. 4935-4938. ISSN 0021-8979Full text not available from this repository.
Official URL: http://dx.doi.org/10.1063/1.1792390
The modification of the electronic properties of InSb by implantation of low-energy N-2(+) ions and annealing have been investigated. A non-uniform electron density depth profile is observed in the near-surface region. Detailed measurements of the conduction-band electron-plasma frequency as a function of temperature combined with carrier statistics reveal that the electron concentration profile in the near-surface region cannot be explained solely by donor-type defects induced by the nitrogen implantation. However, these experimental observations can readily be explained in terms of InNxSb1-x band structure, the different distributions of damage-induced donor defects, and the acceptor-type nitrogen. (C) 2004 American Institute of Physics.
|Item Type:||Journal Article|
|Subjects:||Q Science > QC Physics|
|Journal or Publication Title:||JOURNAL OF APPLIED PHYSICS|
|Publisher:||AMER INST PHYSICS|
|Official Date:||1 November 2004|
|Number of Pages:||4|
|Page Range:||pp. 4935-4938|
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