Min, K. S. and Shcheglov, K. V. and Yang, C. M. and Atwater, Harry A. and Brongersma, M. L. and Polman, A. (1996) Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2. Applied Physics Letters, 69 (14). pp. 2033-2035. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:MINapl96b
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Two sources of room temperature visible luminescence are identified from SiO2 films containing ion beam synthesized Si nanocrystals. From a comparison of luminescence spectra and photoluminescence decay lifetime measurements between Xe + -implanted SiO2 films and SiO2 films containing Si nanocrystals, a luminescence feature attributable to defects in the SiO2 matrix is unambiguously identified. Hydrogen passivation of the films selectively quenches the matrix defect luminescence, after which luminescence attributable to Si nanocrystals is evident, with a lifetime on the order of milliseconds. The peak energy of the remaining luminescence attributable to Si nanocrystals ``redshifts'' as a function of different processing parameters that might lead to increased nanocrystal size and the intensity is directly correlated to the formation of Si nanocrystals. Upon further annealing hydrogen-passivated samples at low temperatures (< 500 °C), the intensity of nanocrystal luminescence increases by more than a factor of 10.
|Additional Information:||©1996 American Institute of Physics. (Received 3 July 1996; accepted 18 July 1996) The authors acknowledge M. Easterbrook and A. Rice for technical assistance. This work was supported by the U.S. Department of Energy under Grant No. DE-FG03-89ER45395 and NATO Ministry for Scientific Affairs. The work at FOM was financially supported by NWO, STW, and IOP Electro-Optics.|
|Subject Keywords:||SILICON; EMISSION SPECTRA; SILICON OXIDES; VISIBLE RADIATION; ION BEAMS; EXCITONS; PHOTOLUMINESCENCE; DEFECTS; HYDROGEN ADDITIONS; RED SHIFT; SYNTHESIS|
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|Deposited On:||05 Apr 2006|
|Last Modified:||26 Dec 2012 08:49|
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