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The paper presents the benefits of asymmetric halo (AH) MOSFETs over conventional symmetric halo (SH) MOSFETs to reduce static leakage in CMOS circuits. Device doping profiles have been optimized to obtain minimum leakage at iso on-current. Static leakage in AH devices is suppressed (61% in NMOS and 90% in PMOSFET) due to reduced band-to-band tunneling current in reverse biased drain-substrate junctions. At iso on-current, the delay in an AH ring-oscillator reduces by 11% because of reduced drain junction capacitance.