Visitors to the Cree booth at the 2013 IMS saw real test data on one of the world’s most extensive lineups of power semiconductors based on silicon carbide (SiC) materials.
To demonstrate the capabilities of their high-power silicon-carbide (SiC) semiconductors, Cree’s booth personnel brought an array of different test fixtures to the 2013 IMS.
Cree’s booth at the 2013 IMS was well stocked with capable test equipment, such as the model E5071C ENA Series network analyzer from Agilent Technologies, to show off the capabilities of their high-power silicon-carbide (SiC) and gallium-nitride (GaN) RF/microwave semiconductors.
demonstrate the capabilities of their high-power silicon-carbide (SiC) semiconductors, Cree’s booth personnel brought an array of different test fixtures to the 2013 IMS.
To assist engineers working with their high-power transistors, Cree showed off their models CDPA2300 and CDPA27300 evaluation boards with coaxial input and output connectors at the 2013 IMS in Seattle, WA.
At the 2013 IMS, semiconductor supplier Cree showed a mix of its gallium nitride (GaN) high-electron-mobility-transistor (HEMT) devices for use in power-amplifier (PA) applications through 3 GHz, including its 15-W model CGHV27015S, and its 30-W models CGH27030S and CGHV27030S.
Demonstrated at the 2013 IMS with a cellular WCDMA test signal, Cree’s model CGH27030S GaN power transistor provides +36-dBm average output power at 2.6 GHz when fed from a +50-VDC supply.
Tested at the 2013 IMS with a cellular WCDMA test signal, Cree’s model CGHV27030S GaN power transistor provides +37-dBm average output power at 2.6 GHz when powered from a +50-VDC supply.
Cree brought a full 19-in. rack full of test equipment to its booth at the 2013 IMS to demonstrate the high-output capabilities of its GaN power transistors.
Cree facilitated live measurements of its GaN power transistors at the 2013 IMS through the use of high-quality test equipment and specially designed test fixtures.
For visitors to their booth at the 2013 IMS, Cree used an Agilent spectrum analyzer to show impressive average CDMA carrier power for a 102 MHz span centered at 2.6 GHz for one of their GaN power transistors.
To meet the wide range of high-power needs at the 2013 IMS, Cree brought a large sampling of its +28- and +40-VDC GaN power devices for C-band, X-band, and Ku-band satellite-communications (satcom) and point-to-point radio applications.
For modern communications users at the 2013 IMS, Cree showed the gain, efficiency, and offset capabilities of its high-power model CGHV1F006S transistor under offset-quadrature-phase-shift-keying (OQPSK) operation at +33 dBm from 5.8 to 7.2 GHz.
For 2013 IMS visitors to the Cree booth concerned with somewhat higher frequencies, the CGHV1F006S power transistor was evaluated for output power and efficiency versus input power at 9.6 GHz.
Cree showcased and demonstrated their latest products at the International Microwave Symposium 2013 in Seattle, WA.
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