Tan, Michael Loong Peng (2006) Modeling the effect of velocity saturation in nanoscale MOSFET. Masters thesis, Universiti Teknologi Malaysia, Faculty of Electrical Engineering.
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MOSFET scaling throughout the years has enabled us to pack million of MOS transistors on a single chip to keep in pace with Mooreâ€™s Law. The introduction of 65 nm and 90 nm process technology offer low power, high-density and highspeed generation of processor with latest technological advancement. When gate length is scaled into nanoscale regime, second order effects are becoming a dominant issue to be dealt with in transistor design. In short channel devices, velocity saturation has redefined the current-voltage (I-V) curve. New models have been modified and studied to provide a better representation of device performance by understanding the effect of quantum mechanical effect. This thesis studies the effect of velocity saturation on transistorâ€™s internal characteristic and external factor. Velocity saturation dependence on temperature, substrate doping concentration and longitudinal electric field for n-MOSFET are investigated. An existing currentvoltage (I-V) compact model is utilized and modified by appending a simplified threshold voltage derivation and a more precise carrier mobility model. The compact model also includes a semi empirical source drain series resistance modeling. The model can simulate the performance of the device under the influence of velocity saturation. The results obtained can be used as a guideline for future nanoscale MOS development.
|Item Type:||Thesis (Masters)|
|Additional Information:||Thesis (Master of Engineering (Electrical)) - Universiti Teknologi Malaysia, 2006; Supervisor : Assoc. Prof. Dr. Razali Bin Ismail|
|Uncontrolled Keywords:||current-voltage, drain source resistance, MOSFET, threshold voltage, velocity saturation|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Ms Zalinda Shuratman|
|Deposited On:||11 Dec 2007 01:08|
|Last Modified:||07 Nov 2012 08:50|
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