Highly sensitive recognition element based on birefringent porous silicon layers
Gross, E., Kovalev, D., Kunzner, N., Timoshenko, V. Y., Diener, J. and Koch, F., 2001. Highly sensitive recognition element based on birefringent porous silicon layers. Journal of Applied Physics, 90 (7), pp. 3529-3532.
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Anisotropically nanostructured silicon layers exhibit a strong in-plane birefringence. Their optical anisotropy parameters are found to be extremely sensitive to the presence of dielectric substances inside of the pores. Polarization-resolved transmittance measurements provide an extremely sensitive tool to analyze the adsorption of various atoms and molecules in negligible quantities. A variation of the transmitted linearly polarized light intensity up to two orders of magnitude combined with a fast optical response in the range of seconds make these layers a good candidate for sensor applications. (C) 2001 American Institute of Physics.
|Creators||Gross, E., Kovalev, D., Kunzner, N., Timoshenko, V. Y., Diener, J. and Koch, F.|
|Departments||Faculty of Science > Physics|
|Additional Information||ID number: ISI:000171135900064|
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