DSpace at IIT Bombay >
IITB Publications >
Please use this identifier to cite or link to this item:
|Title: ||Study of automatic recovery on the metal nanocrystal-based Al(2)O(3)/SiO(2) gate stack|
|Authors: ||CHEN, YN|
|Issue Date: ||2011|
|Publisher: ||AMER INST PHYSICS|
|Citation: ||APPLIED PHYSICS LETTERS,98(8)-|
|Abstract: ||Automatic recovery of leakage current to its prestress condition was observed after soft breakdown on Ru metal nanocrystal-based Al(2)O(3)/SiO(2) gate stack. We propose that the high current density induced upon breakdown causes considerable Joule heating in the breakdown percolation path. This increases the probability of detrapping and thermal diffusion of the oxygen ions which passivates the oxygen vacancies in the percolation path. This recovery mechanism is supported by studies on leakage current and dielectric relaxation current at elevated temperatures. We discuss the significance of our findings in the lights of enhancing the reliability margin of metal nanocrystal-based nonvolatile memory. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3556641]|
|Appears in Collections:||Article|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.