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|Title:||Interfacial defects in resistive switching devices probed by thermal analysis|
|Authors:||Lau, H. K.|
Leung, Dennis Chi-wah
Chan, Paddy K. L.
|Publisher:||American Institute of Physics|
|Source:||Journal of applied physics, 1 July 2009, v. 106, no. 1, 014504, p. 1-4.|
|Abstract:||Resistive switching mechanism is investigated by thermal analysis of metal electrodes in the planar Al/Pr₀.₇Ca₀.₃MnO₃(PCMO)/Ni resistive switching device geometry. Two microthermocouples are used to monitor the electrode temperatures under different electrical bias conditions. Comparison of temperature differences between Al and Ni electrodes at high and low resistance states suggests that local heat source exists under the Al electrode at high resistance state. It agrees well with the recent finding in which AlO᙮ presents at the Al/PCMO interface and it can be the origin of the resistance switching mechanism [Li et al., J. Phys. D 42, 045411 (2009)]. Thermal measurements demonstrate excellent capability on characterizing resistance switching devices.|
|Rights:||© 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in H.K. Lau al., J. Appl. Phys. 106, 014504 (2009) and may be found at http://link.aip.org/link/?jap/106/014504|
|Appears in Collections:||MRC Journal/Magazine Articles|
AP Journal/Magazine Articles
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