This Sentaurus TCAD simulation project provides a template setup for IGBT device characterization. IcVge curves and a family of IcVce curves are simulated for an IGBT at different device temperatures. In addition, the off-state breakdown as well as the timedependent switching characteristics are simulated.
Top portion of IGBT device generated by Sentaurus Structure Editor; concentrations of dopants in various regions are shown
Collector current as function of collector voltage for IGBT devices simulated with Sentaurus Device; gate bias for curves is 5 V (green), 4 V (blue), and 3 V (red); results for device temperature of 300 K (solid lines) and 425 K (dashed lines) are shown
The simulation project is part of the Sentaurus TCAD distribution at:
If you are interested in accessing this Application Example, please fill out the Example Request Form and you will be emailed download instructions.