- Tan, T.Y. and Wu, L.L. and Tice, W.K., Nucleation of stacking faults at oxide precipitate-dislocation complexes in silicon,
Appl. Phys. Lett. (USA), vol. 29 no. 12
pp. 765 - 7 [1.88941] .
(last updated on 2007/04/10)
Transmission electron microscopy is used to study samples of Si grown by the Czochralski process. The nucleation sites are found to consist of oxide precipitate-dislocation complexes which show up as etch pits. It is concluded that the stacking faults arise from the dissociation of (1/2)〈110〉 dislocations in a sessile 111 plane. This conclusion can be used to explain several different experimental observations on Si crystals
dislocation etching;elemental semiconductors;impurity-dislocation interactions;precipitation;silicon;stacking faults;transmission electron microscope examination of materials;