Method for the deposition of diamond on a substrate
Latsch, Stefan A.
|Source||US Patent, 5,368,681. Washington, DC: US Patent and Trademark Office, 1994.|
|Summary||A method is disclosed for the deposition of crystalline diamond on a substrate such as a silicon wafer. A polymer (for example poly(methylmethacrylate)) is provided as a target for laser ablation using for example an ArF excimer laser or an Nd-Yag laser. The laser ablation is performed in the presence of a reactive gas such as oxygen or hydrogen. The substrate is heated to a temperature of between 450 and 700 degrees celsius.|
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